Abstract:
A thermal barrier-coated Ni alloy component (10) includes: a substrate (12) made of a Ni alloy containing Al; an intermediate layer (14) formed on a surface of the substrate (12); and a thermal barrier layer (16) made of a ceramic and formed on a surface of the intermediate layer (14). The intermediate layer (14) includes a ³' layer (18), which is formed from a ³'-Ni 3 Al phase on the surface on the thermal barrier layer (16) side, and contains Pt.
Abstract:
An Ir-based alloy material or Ru-based alloy material containing in Ir or Ru at least one member of Al, Sc, Ti, V, Cr, Mn, Y, Zr, Nb, Mo, Tc, Hf, Ta, W, and Re in such an amount that a precipitation phase is not formed, wherein the Ir-based alloy material or Ru-based alloy material has a surface uniformly covered with an IrAl intermetallic compound film or a RuAl intermetallic compound film.
Abstract:
An Ni alloy article (10) coated with a thermal shield, said article including a base material (12) formed from an Al-containing Ni alloy, an intermediate layer (14) formed on a surface of the base material (12), and a thermal shield layer (16) that is formed from ceramic and on a surface of the intermediate layer (14). The intermediate layer (14) includes, on a surface on the side of the thermal shield layer (16), a Pt-containing ?´layer (18) that is formed from a ?´-Ni3Al phase.
Abstract:
Gegenstand der Erfindung ist ein Verfahren zur Herstellung von Silicium, umfassend eine Heizstufe des Erhitzens eines Metallpulvers Mp1, das aus mindestens einer Komponente, die aus der Gruppe von Mg, Ca und Al ausgewählt ist, besteht, in einem Plasma P; und eine Reduktionsstufe des Reduzierens eines halogenierten Silans G1 durch das in dem Plasma P erhitzte Metallpulver Mp2 zur Bildung von Silicium.
Abstract:
Disclosed is a silicon manufacturing method provided with a heating step wherein a metal powder (Mp1) comprised of at least one type selected from a group comprised of Mg, Ca and Al is heated in a plasma (P), and a reduction step wherein a halogenated silane (G1) is reduced with a metal powder (Mp2) which is heated in the plasma (P), and silicon is obtained.