公开(公告)号：JP2001244227A

公开(公告)日：2001-09-07

申请号：JP2000049757

申请日：2000-02-25

Applicant: NAT INST OF ADVANCED IND SCIEN

Inventor： KOSUGI RYOJI ,  ICHIMURA SHINGO ,  KUROKAWA AKIRA ,  FUKUDA KENJI ,  SENZAKI SUMIHISA ,  CHO GENSHU ,  OGUSHI HIDEYO ,  ARAI KAZUO

IPC: C30B29/36 ,  C30B33/12 ,  H01L21/304

Abstract: PROBLEM TO BE SOLVED: To prepare reliable semiconductor devices by a gas washing method of a semiconductor substrate surface by carrying out ozone exposure accompanying ultraviolet-ray irradiation under reduced pressure, and by effectively removing carbon impurities on the semiconductor substrate surface. SOLUTION: In the substrate pretreatment washing process when semiconductor devices are prepared, a substrate temperature is maintained from the room temperature to 1200 deg.C, and ultraviolet rays are applied onto the substrate surface for carrying out ozone exposure.

公开(公告)号：JP2001345320A

公开(公告)日：2001-12-14

申请号：JP2000166320

申请日：2000-06-02

Applicant: NAT INST OF ADVANCED IND SCIEN ,  JAPAN SCIENCE & TECH CORP ,  SANYO ELECTRIC CO

Inventor： FUKUDA KENJI ,  ARAI KAZUO ,  CHO GENSHU ,  KOSUGI RYOJI ,  SUZUKI SEIJI

IPC: H01L29/78 ,  H01L21/316

Abstract: PROBLEM TO BE SOLVED: To form a good interface having a low interfacial level density between silicon dioxide and a semiconductor by improving the film quality of a silicon oxide film formed on the semiconductor by the chemical vapor growth method. SOLUTION: In this method of manufacturing semiconductor device, the silicon oxide film is formed on a semiconductor substrate composed of silicon carbide, diamond, etc., by the chemical vapor growth method and the semiconductor substrate carrying the silicon oxide film is heat-treated at a temperature which falls within the temperature range of 1,100-1,400 deg.C for 30 minutes or longer in an inert gas. After heat treatment, electrodes are formed on the heat- treated semiconductor substrate.

公开(公告)号：JP2001244260A

公开(公告)日：2001-09-07

申请号：JP2000049762

申请日：2000-02-25

Applicant: NAT INST OF ADVANCED IND SCIEN

Inventor： KOSUGI RYOJI ,  ICHIMURA SHINGO ,  KUROKAWA AKIRA ,  CHO GENSHU ,  FUKUDA KENJI ,  SENZAKI SUMIHISA ,  OGUSHI HIDEYO ,  ARAI KAZUO

IPC: H01L21/316 ,  H01L21/04 ,  H01L21/304 ,  H01L29/78

Abstract: PROBLEM TO BE SOLVED: To form an interface between oxide film/silicon carbide having a small flat band shift voltage when a metal-oxide film-semiconductor (MOS) structure is formed using a silicon carbide substrate. SOLUTION: In a pre-process for processing a substrate before forming a gate oxide film on a silicon carbide semiconductor substrate, while keeping the temperature of the substrate in a range from the room temperature to 1200 degree centigrade and applying ultraviolet rays to the substrate, the substrate is exposed to ozone to form the interface between oxide film/silicon carbide.