公开(公告)号：JP2001345320A

公开(公告)日：2001-12-14

申请号：JP2000166320

申请日：2000-06-02

Applicant: NAT INST OF ADVANCED IND SCIEN ,  JAPAN SCIENCE & TECH CORP ,  SANYO ELECTRIC CO

Inventor： FUKUDA KENJI ,  ARAI KAZUO ,  CHO GENSHU ,  KOSUGI RYOJI ,  SUZUKI SEIJI

IPC: H01L29/78 ,  H01L21/316

Abstract: PROBLEM TO BE SOLVED: To form a good interface having a low interfacial level density between silicon dioxide and a semiconductor by improving the film quality of a silicon oxide film formed on the semiconductor by the chemical vapor growth method. SOLUTION: In this method of manufacturing semiconductor device, the silicon oxide film is formed on a semiconductor substrate composed of silicon carbide, diamond, etc., by the chemical vapor growth method and the semiconductor substrate carrying the silicon oxide film is heat-treated at a temperature which falls within the temperature range of 1,100-1,400 deg.C for 30 minutes or longer in an inert gas. After heat treatment, electrodes are formed on the heat- treated semiconductor substrate.

公开(公告)号：JP2001244260A

公开(公告)日：2001-09-07

申请号：JP2000049762

申请日：2000-02-25

Applicant: NAT INST OF ADVANCED IND SCIEN

Inventor： KOSUGI RYOJI ,  ICHIMURA SHINGO ,  KUROKAWA AKIRA ,  CHO GENSHU ,  FUKUDA KENJI ,  SENZAKI SUMIHISA ,  OGUSHI HIDEYO ,  ARAI KAZUO

IPC: H01L21/316 ,  H01L21/04 ,  H01L21/304 ,  H01L29/78

Abstract: PROBLEM TO BE SOLVED: To form an interface between oxide film/silicon carbide having a small flat band shift voltage when a metal-oxide film-semiconductor (MOS) structure is formed using a silicon carbide substrate. SOLUTION: In a pre-process for processing a substrate before forming a gate oxide film on a silicon carbide semiconductor substrate, while keeping the temperature of the substrate in a range from the room temperature to 1200 degree centigrade and applying ultraviolet rays to the substrate, the substrate is exposed to ozone to form the interface between oxide film/silicon carbide.

公开(公告)号：JP2001244227A

公开(公告)日：2001-09-07

申请号：JP2000049757

申请日：2000-02-25

Applicant: NAT INST OF ADVANCED IND SCIEN

Inventor： KOSUGI RYOJI ,  ICHIMURA SHINGO ,  KUROKAWA AKIRA ,  FUKUDA KENJI ,  SENZAKI SUMIHISA ,  CHO GENSHU ,  OGUSHI HIDEYO ,  ARAI KAZUO

IPC: C30B29/36 ,  C30B33/12 ,  H01L21/304

Abstract: PROBLEM TO BE SOLVED: To prepare reliable semiconductor devices by a gas washing method of a semiconductor substrate surface by carrying out ozone exposure accompanying ultraviolet-ray irradiation under reduced pressure, and by effectively removing carbon impurities on the semiconductor substrate surface. SOLUTION: In the substrate pretreatment washing process when semiconductor devices are prepared, a substrate temperature is maintained from the room temperature to 1200 deg.C, and ultraviolet rays are applied onto the substrate surface for carrying out ozone exposure.

公开(公告)号：EP1361614A4

公开(公告)日：2008-05-14

申请号：EP02711222

申请日：2002-01-24

Applicant: NAT INST OF ADVANCED IND SCIEN ,  JAPAN SCIENCE & TECH CORP ,  SANYO ELECTRIC CO

Inventor： FUKUDA KENJI ,  ARAI KAZUO ,  SENZAKI JUNJI ,  HARADA SHINSUKE ,  KOSUGI RYOJI ,  ADACHI K ,  SUZUKI SEIJI

IPC: H01L21/28 ,  H01L21/04 ,  H01L21/316 ,  H01L29/24 ,  H01L29/423 ,  H01L29/43 ,  H01L29/49 ,  H01L29/78 ,  H01L21/336

CPC classification number: H01L29/66068 ,  H01L21/049 ,  H01L29/1608 ,  H01L29/7838

Abstract: A method for manufacturing a semiconductor device, which is a buried-channel region transistor comprising a P-type silicon carbide substrate (1), having a high hot carrier resistance and a high punch-through resistance, or a high channel mobility and immune to changing to a normally-on transistor. The method comprises the steps of forming a buried channel region (2) and source/drain regions, forming a gate insulating film (7), and exposing the gate insulating film in an atmosphere containing water vapor and heated to above 500° C. The gate insulating film is formed by thermal oxidization using dry oxygen.

公开(公告)号：EP1434272A4

公开(公告)日：2009-07-01

申请号：EP02777783

申请日：2002-09-10

Applicant: NAT INST OF ADVANCED IND SCIEN ,  SANYO ELECTRIC CO

Inventor： KOSUGI RYOJI ,  FUKUDA KENJI ,  SENZAKI JUNJI ,  OKAMOTO M ,  HARADA S ,  SUZUKI SEIJI

IPC: H01L21/28 ,  H01L29/78 ,  H01L21/04 ,  H01L21/316

CPC classification number: H01L29/66068 ,  H01L21/049

Abstract: A production method for semiconductor devices comprising the step of forming on a silicon carbide substrate a gate insulation film such as a silicon oxide film, silicon nitride film or silicon oxide nitride film, wherein, after the gate insulation film is formed on the silicon carbide substrate, the film is heat treated within a temperature range of 900°C to 1000°C in an atmosphere containing at least 25% of H2O (water) to provide a semiconductor device improved in channel mobility.

公开(公告)号：AU2003284665A1

公开(公告)日：2004-06-18

申请号：AU2003284665

申请日：2003-11-25

Applicant: NAT INST OF ADVANCED IND SCIEN

Inventor： FUKUDA KENJI ,  KOSUGI RYOJI ,  SENZAKI JUNJI ,  HARADA SHINSUKE

IPC: H01L21/04 ,  H01L29/24 ,  H01L29/78 ,  H01L29/861 ,  H01L29/872 ,  H01L29/04 ,  H01L29/80 ,  H01L29/808 ,  H01L21/336 ,  H01L21/337 ,  H01L29/16

Abstract: In a semiconductor device that uses a silicon carbide semiconductor substrate having p type, n type impurity semiconductor regions formed by ion implantation, the electrical characteristics of the end semiconductor device can be improved by decreasing the roughness of the silicon carbide semiconductor substrate surface. The semiconductor device of this invention is a Schottky barrier diode or a p-n type diode comprising at least one of a p type semiconductor region and n type semiconductor region selectively formed in a silicon carbide semiconductor region having an outermost surface layer surface that is a (000-1) surface or a surface inclined at an angle to the (000-1) surface, and a metal electrode formed on the outermost surface layer surface, that controls a direction in which electric current flows in a direction perpendicular to the outermost surface layer surface from application of a voltage to the metal electrode.

公开(公告)号：DE10393777T5

公开(公告)日：2005-10-20

申请号：DE10393777

申请日：2003-11-25

Applicant: NAT INST OF ADVANCED IND SCIEN

Inventor： FUKUDA KENJI ,  KOSUGI RYOJI ,  SENZAKI JUNJI ,  HARADA SHINSUKE

IPC: H01L21/04 ,  H01L29/24 ,  H01L29/78 ,  H01L29/861 ,  H01L29/872 ,  H01L29/04 ,  H01L29/16 ,  H01L29/80 ,  H01L29/808 ,  H01L21/336 ,  H01L21/337

Abstract: In a semiconductor device that uses a silicon carbide semiconductor substrate having p type, n type impurity semiconductor regions formed by ion implantation, the electrical characteristics of the end semiconductor device can be improved by decreasing the roughness of the silicon carbide semiconductor substrate surface. The semiconductor device of this invention is a Schottky barrier diode or a p-n type diode comprising at least one of a p type semiconductor region and n type semiconductor region selectively formed in a silicon carbide semiconductor region having an outermost surface layer surface that is a (000-1) surface or a surface inclined at an angle to the (000-1) surface, and a metal electrode formed on the outermost surface layer surface, that controls a direction in which electric current flows in a direction perpendicular to the outermost surface layer surface from application of a voltage to the metal electrode.