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公开(公告)号：JP2001304756A
公开(公告)日：2001-10-31
申请号：JP2000118889
申请日：2000-04-20
Inventor： ICHIMURA SHINGO , NONAKA HIDEHIKO , KUROKAWA AKIRA , MURAKAMI HIROSHI , NISHIGUCHI TETSUYA , MIYAMOTO MASAHARU , MORIKAWA YOSHIKI , OISHI KAZUSHIRO , HANAKURA MITSURU
Abstract: PROBLEM TO BE SOLVED: To accumulate liquefied ozone of a high concentration. SOLUTION: A cold tray 2a of the same constitution as a liquefied ozone generator 2 is provided in a flow path between a fine particle removing filter 7 and a flow control valve 8. The cold trap 2a is cooled by means of a trap chamber 29, a freezer 33, a cold head 32 and a metal block 31 for cooling. The metal block 31 is controlled by a temperature controller 34 comprising a temperature sensor and a heater, and the freezer 33 is controlled by a compressor. An ozone-containing oxygen gas is introduced into a trap chamber 29 from the filter 7. The freezer 33 and the controller 34 set the temperature of the chamber 29 higher than the temperature of an ozone chamber 9. Thus, the trap chamber 29 liquefies or solidifies an impurity gas of comparatively higher temperature than zone to be liquefied.
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公开(公告)号：JP2001304754A
公开(公告)日：2001-10-31
申请号：JP2000118886
申请日：2000-04-20
Inventor： ICHIMURA SHINGO , KUROKAWA AKIRA , KAWADA MASAKUNI , MORIKAWA YOSHIKI , MIYAMOTO MASAHARU , OISHI KAZUSHIRO , NISHIGUCHI TETSUYA , HANAKURA MITSURU
Abstract: PROBLEM TO BE SOLVED: To provide a liquefied ozone generator in which deformation and breakage are prevented from occurring in a refrigeration means connected to an ozone chamber through a cooling metal block, in case of ozone explosion in the ozone chamber. SOLUTION: A metal cooling block is provided in connection with at least the bottom face of the ozone chamber, the metal block is thermally connected to the cooling means through a buffer means formed of a member of a high heat conductivity and a buffering action.
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公开(公告)号：JP2001139309A
公开(公告)日：2001-05-22
申请号：JP31803399
申请日：1999-11-09
Inventor： KUROKAWA AKIRA , KAWADA MASAKUNI , ICHIMURA SHINGO , MURAKAMI HIROSHI , MORIKAWA YOSHIKI , MIYAMOTO MASAHARU , OISHI KAZUSHIRO , NISHIGUCHI TETSUYA , HANAKURA MITSURU
Abstract: PROBLEM TO BE SOLVED: To generate liquefied ozone in practical level for example, even in a field such as the application to a semiconductor wafer process by improving the liquefying rate of ozone. SOLUTION: The liquefying rate of ozone is improved by controlling an ozone-containing oxygen gas introduced into an ozone chamber to adjust the inside pressure of the ozone chamber to 53-100 hPa and cooling the inside of the ozone chamber by using a metallic block for cooling.
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公开(公告)号：JP2001139308A
公开(公告)日：2001-05-22
申请号：JP31803299
申请日：1999-11-09
Inventor： MURAKAMI HIROSHI , ICHIMURA SHINGO , KAWADA MASAKUNI , AKIYAMA KOICHI , MIYAMOTO MASAHARU , MORIKAWA YOSHIKI , OISHI KAZUSHIRO , NISHIGUCHI TETSUYA
Abstract: PROBLEM TO BE SOLVED: To solve a problem that there is a risk of explosion of ozone gas with the increase of the storage quantity of liquefied ozone in the case of generating and storing the liquefied ozone in an ozone chamber by introducing an ozone-containing gas in the ozone chamber and cooling the inside of the ozone chamber with a refrigerator. SOLUTION: A temperature detection type liquid level detector 8 for detecting the temperature of the liquefied ozone at the maximum storage quantity position is provided and detects that the storage quantity of the liquefied ozone reaches the maximum storage quantity position by the change of the detected temperature by the liquid level detector 8. The liquid level detector includes also a structure for detecting the maximum storage quantity position and plural storage positions by utilizing the difference of absorbance, refraction factor and light reflection position on the liquefied ozone surface between the liquefied ozone and unliquefied ozone gas and gaseous oxygen.
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公开(公告)号：JP2001133142A
公开(公告)日：2001-05-18
申请号：JP31803799
申请日：1999-11-09
Inventor： KUROKAWA AKIRA , KAWADA MASAKUNI , ICHIMURA SHINGO , MURAKAMI HIROSHI , NISHIGUCHI TETSUYA , MIYAMOTO MASAHARU , MORIKAWA YOSHIKI , OISHI KAZUSHIRO , HANAKURA MITSURU
Abstract: PROBLEM TO BE SOLVED: To improve the liquefying capacity of a liquid ozone manufacturing device by improving the heat-exchanging capacity of the device. SOLUTION: A cup 29 is set up on the bottom of an ozone chamber 9 in a turned-over state. The front end of an ozone-containing oxygen gas introducing pipe 25 is inserted into and connected to the bottom section of the cup 29. The cup 29 has the hole 30 into which the pipe 25 is inserted and a plurality of small holes 31 on its outer peripheral wall surface. The cup 29 is made of such a metallic material as aluminum, etc., which is not damaged by liquid ozone.
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Patent Agency Ranking
公开(公告)号：JP2001133141A
公开(公告)日：2001-05-18
申请号：JP31803699
申请日：1999-11-09
Inventor： KUROKAWA AKIRA , KAWADA MASAKUNI , ICHIMURA SHINGO , HANAKURA MITSURU , MIYAMOTO MASAHARU , MORIKAWA YOSHIKI , OISHI KAZUSHIRO , NISHIGUCHI TETSUYA
Abstract: PROBLEM TO BE SOLVED: To increase the liquid ozone generating and storing capacities of a liquid ozone manufacturing device while the safety with respect to the explosion of liquid ozone is secured. SOLUTION: An ozone-containing oxygen gas is distributed to divided chambers 9a-9c through a valve 8 and the chambers 9a-9c generate and store liquid ozone. A left mixed gas which is not used for the generation of the liquid ozone is discharged through another valve 10. At the time of utilizing the generated liquid ozone as a high-concentration ozone gas, the liquid ozone is vaporized by raising the controlled temperature of a metallic block 28 for cooling by closing the valves 8 and 10 and opening a valve 15.
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公开(公告)号：JP2001302214A
公开(公告)日：2001-10-31
申请号：JP2000118887
申请日：2000-04-20
Inventor： ICHIMURA SHINGO , OISHI KAZUSHIRO , MIYAMOTO MASAHARU , MORIKAWA YOSHIKI , NISHIGUCHI TETSUYA
Abstract: PROBLEM TO BE SOLVED: To vaporize liquid ozone except an ozone chamber part. SOLUTION: A slit body 33 is arranged at the central part in an ozone chamber and the ozone chamber 3 is cooled to 70-95 K liquefaction temperature by a cryogenic energy-storing block 8 installed around the outer periphery of the ozone chamber 3. The hole diameter of the slit body 33 is formed in such a hole diameter as not to drop a liquid ozone by the surface tension of liquid ozone. Consequently, the liquid ozone 21 is retained in the hole of the slit body. A reflector 32 for reflecting a laser beam from a heat source 31 is arranged at the lower part of the slit body 33. The liquid ozone 21 exposed from the hole of the slit body 33 is heated and vaporized by using the laser beam reflected from the reflector 32. The vaporized ozone is transported through a process line 12 to a reaction chamber 14. Since the upper part of the ozone chamber 3 being a liquefaction part and the lower part of the ozone chamber 3 being a vaporization part can be independently controlled in the structure, a continuous operation is made possible.
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公开(公告)号：JP2001244227A
公开(公告)日：2001-09-07
申请号：JP2000049757
申请日：2000-02-25
Applicant: NAT INST OF ADVANCED IND SCIEN
Inventor： KOSUGI RYOJI , ICHIMURA SHINGO , KUROKAWA AKIRA , FUKUDA KENJI , SENZAKI SUMIHISA , CHO GENSHU , OGUSHI HIDEYO , ARAI KAZUO
IPC: C30B29/36 , C30B33/12 , H01L21/304
Abstract: PROBLEM TO BE SOLVED: To prepare reliable semiconductor devices by a gas washing method of a semiconductor substrate surface by carrying out ozone exposure accompanying ultraviolet-ray irradiation under reduced pressure, and by effectively removing carbon impurities on the semiconductor substrate surface. SOLUTION: In the substrate pretreatment washing process when semiconductor devices are prepared, a substrate temperature is maintained from the room temperature to 1200 deg.C, and ultraviolet rays are applied onto the substrate surface for carrying out ozone exposure.
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公开(公告)号：JP2001176867A
公开(公告)日：2001-06-29
申请号：JP35822099
申请日：1999-12-17
Applicant: NAT INST OF ADVANCED IND SCIEN , IWATANI INT CORP
Inventor： ICHIMURA SHINGO , KUROKAWA AKIRA , NAKAMURA TAKESHI , KOIKE KUNIHIKO
IPC: H01L21/316
Abstract: PROBLEM TO BE SOLVED: To provide a method for forming a silicon oxide film, in an atmosphere at low temperature in the range from an ambient temperature to 600 deg.C. SOLUTION: On forming the silicon oxide film by acting an ozone gas on a silicon substrate, the ozone gas of 15 to 30 vol.% under a depressed atmosphere is activated on the silicon substrate at a temperature equal to or below 600 deg.C.
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公开(公告)号：JP2001139311A
公开(公告)日：2001-05-22
申请号：JP31803899
申请日：1999-11-09
Inventor： ICHIMURA SHINGO , NONAKA HIDEHIKO , NISHIGUCHI TETSUYA , MIYAMOTO MASAHARU , MORIKAWA YOSHIKI , OISHI KAZUSHIRO , HANAKURA MITSURU
IPC: F17C11/00 , C01B13/10 , H01L21/31 , H01L21/316
Abstract: PROBLEM TO BE SOLVED: To obtain a storage method and storage device for a high concentration ozone-containing gas and a method and device for oxidation processing, which are capable of preventing the decrease of the concentration of ozone gas and effectively utilizing the storing oxidation power. SOLUTION: The high concentration ozone-containing gas is stored by a process for adsorbing high purity ozone gas on a target substrate as solid ozone by cooling the target substrate composed of a material arranged in a vacuum chamber, inert to ozone and having good heat conductivity and supplying the high purity ozone gas on the target substrate. The storage and fixed ozone is emitted as ozone beam toward the surface of a sample to be oxidized by the laser beam irradiation or the heating of the surface.
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