公开(公告)号：JP2004111923A

公开(公告)日：2004-04-08

申请号：JP2003208104

申请日：2003-08-20

Applicant: Osram Opto Semiconductors Gmbh ,  オスラム オプト セミコンダクターズ ゲゼルシャフト ミット ベシュレンクテル ハフツングOsram Opto Semikonductors GmbH

Inventor： LINDER NORBERT ,  STAUSS PETER ,  HAMPEL MARK ,  STREUBEL KLAUS

IPC: H01L33/04 ,  H01L33/30 ,  H01L33/00

CPC classification number: H01L33/30 ,  H01L33/04

Abstract: PROBLEM TO BE SOLVED: To improve an aging characteristic of a semiconductor light emitting diode. SOLUTION: A layer sequence of an InGaAlP base is grown on an Si-doped GaAs wafer. The layer sequence includes an n-doped cover layer and active layer 14, and a magnesium-p-doped cover layer 20. Further, a GaP window layer 22 is grown on a p cover layer 20 during an epitaxial process at a temperature of 840 to 860°C. A diffusion-stop layer 16 is provided between the active layer 14 and the p cover layer 20 so as to suppress the diffusion of Mg-doping atom from the p cover layer to the active layer 14 (the diffusion usually occurs at high growth temperatures to the GaP window layer 22). The diffusion-stop layer 16 is strongly n-doped and comprises a bias loaded over grid. COPYRIGHT: (C)2004,JPO

公开(公告)号：DE10306311A1

公开(公告)日：2004-03-11

申请号：DE10306311

申请日：2003-02-14

Applicant: OSRAM OPTO SEMICONDUCTORS GMBH

Inventor： LINDER NORBERT ,  STREUBEL KLAUS ,  STAUSS PETER ,  HAMPEL MARK

IPC: H01L33/04 ,  H01L33/30 ,  H01L33/00

Abstract: Radiation-emitting semiconductor component comprises an n-doped casing layer (18), a p-doped casing layer (20), an active layer (14) based on InGaAlP arranged between the casing layers, and a diffusion stop layer (16) having a tensioned superlattice arranged between the active layer and the p-doped casing layer.

公开(公告)号：DE10306311B4

公开(公告)日：2008-08-07

申请号：DE10306311

申请日：2003-02-14

Applicant: OSRAM OPTO SEMICONDUCTORS GMBH

Inventor： LINDER NORBERT ,  STREUBEL KLAUS ,  STAUSS PETER ,  HAMPEL MARK

IPC: H01L33/04 ,  H01L33/30