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    다수의 반도체 소자들을 포함하는 광원
    2.
    发明公开
    다수의 반도체 소자들을 포함하는 광원 审中-公开
    一种包括多个半导体元件的光源

    公开(公告)号：KR20180008617A

    公开(公告)日：2018-01-24

    申请号：KR20177035922

    申请日：2016-05-17

    Applicant: OSRAM OPTO SEMICONDUCTORS GMBH

    Inventor： GOLDBACH MATTHIAS ,  GROETSCH STEFAN ,  HOLZ JUERGEN ,  ILLEK STEFAN

    IPC: H01L25/075 ,  H01L25/16

    CPC classification number: H01L25/167 ,  H01L25/0753 ,  H01L2224/48137 ,  H01L2224/49171

    Abstract: 본발명은다수의반도체소자들을포함하는광원에관한것이고, 여기서반도체소자는다수의발광다이오드들을갖고, 다이오드들은반도체소자상에적어도하나의열의미리결정된그리드내에배열되고, 개별다이오드들을제어하기위한제어회로가반도체소자상에배열된다. 본발명은또한다수의발광다이오드들을갖는반도체소자에관한것이고, 여기서다이오드들은반도체소자상에적어도하나의열의미리결정된그리드내에배열되고, 개별다이오드들을제어하기위한제어회로가반도체소자상에배열되고, 제어회로는다이오드들을개별적으로제어하도록설계된다.

    Abstract translation: 本发明涉及一种光源，包括多个半导体元件，其中，所述半导体器件具有多个发光二极管，所述二极管被布置在预定的网格至少一排在半导体元件上，用于控制各个二极管的控制 电路布置在半导体元件上。 本发明还涉及一种具有多个发光二极管，其中所述二极管被布置在至少一个列中的半导体器件中，半导体元件上的预定网格，用于控制各个二极管的控制电路被布置在半导体元件上， 控制电路设计用于单独控制二极管。

    Light-emitting diode chip
    3.
    发明专利
    Light-emitting diode chip 有权
    发光二极管芯片

    公开(公告)号：JP2005136427A

    公开(公告)日：2005-05-26

    申请号：JP2004316905

    申请日：2004-10-29

    Applicant: Osram Opto Semiconductors Gmbh ,  オスラム オプト セミコンダクターズ ゲゼルシャフト ミット ベシュレンクテル ハフツングOsram Opto Semiconductors GmbH

    Inventor： GROETSCH STEFAN ,  BRUNNER HERBERT ,  OTT HUBERT

    IPC: H01L33/50 ,  H01L33/58 ,  H01L33/00

    CPC classification number: H01L33/50 ,  H01L33/58 ,  H01L2224/48463

    Abstract: PROBLEM TO BE SOLVED: To present a light-emitting diode (LED) chip that already has elements for improving the radiation output coupling and/or to convert electromagnetic radiation, thus to miniaturize a light-emitting device.
    SOLUTION: The LED chip, which has an array of epitaxially grown semiconductor layers, is so structured that the LED has a covering object transmitting radiation, the covering object is put on a radiation output coupling surface postpositioned in an LED chip radiation direction and has a first principal plane oriented in the radiation output coupling surface, a second principal plane oriented toward a direction which is reverse to that of the radiation output coupling surface, and a side surface that connects the first and second principal planes, and a junction layer is arranged between the radiation output coupling surface and the covering object, which directly joins and fixes the covering object to the semiconductor layer array, and the junction layer includes at least one conversion layer that has a light-emitting conversion material.
    COPYRIGHT: (C)2005,JPO&NCIPI

    Abstract translation: 要解决的问题：提出已经具有用于改善辐射输出耦合的元件和/或转换电磁辐射的发光二极管（LED）芯片，从而使发光器件小型化。 解决方案：具有外延生长的半导体层阵列的LED芯片被构造成使得LED具有透射辐射的覆盖对象，覆盖物被放置在LED芯片辐射方向上后置的辐射输出耦合表面上 并且具有在辐射输出耦合表面中定向的第一主平面，朝向与辐射输出耦合表面的方向相反的方向定向的第二主平面以及连接第一和第二主平面的侧表面以及连接 层之间布置在辐射输出耦合表面和被覆物体之间，其将覆盖物直接接合并固定到半导体层阵列，并且接合层包括至少一个具有发光转换材料的转换层。 版权所有（C）2005，JPO＆NCIPI

    Radiation emission element
    5.
    发明专利
    Radiation emission element 审中-公开
    辐射排放元素

    公开(公告)号：JP2008047906A

    公开(公告)日：2008-02-28

    申请号：JP2007209632

    申请日：2007-08-10

    Applicant: Osram Opto Semiconductors Gmbh ,  オスラム オプト セミコンダクターズ ゲゼルシャフト ミット ベシュレンクテル ハフツングOsram Opto Semiconductors GmbH

    Inventor： EBERHARD FRANZ ,  GROETSCH STEFAN ,  LINDER NORBERT ,  MOOSBURGER JUERGEN ,  STREUBEL KLAUS ,  WIRTH RALPH ,  SABATHIL MATTHIAS ,  MUSCHAWECK JULIUS ,  BERGENEK KRISTER

    IPC: H01L33/44 ,  H01L33/46 ,  H01L33/58

    CPC classification number: H01L33/44 ,  G02F1/13362 ,  H01L33/46 ,  H01L33/58

    Abstract: PROBLEM TO BE SOLVED: To provide a radiation emission element which can actualize relatively high luminance in a desired spatial direction, in a desired polarization direction or at a desired wavelength. SOLUTION: The radiation emission element according to the present invention is based on a semiconductor material and comprises a layer stack having an active layer sequence for producing a radiation emission element and a filter element placed at a rear side of the active layer sequence as seen from a radiation direction, and is configured in such a manner that the filter element emits a first emission component and reflects a second emission component within the layer stack, the second reflection component, after being reflected at the filter element, is subjected to deflection process or absorption emission process, and the radiation deflected or emitted is supposed to come into the filter element again. COPYRIGHT: (C)2008,JPO&INPIT

    Abstract translation: 要解决的问题：提供一种可以在期望的空间方向上，在期望的偏振方向或期望的波长上实现相对高的亮度的辐射发射元件。 解决方案：根据本发明的辐射发射元件基于半导体材料并且包括具有用于产生辐射发射元件的有源层序列和放置在有源层序列的后侧的滤波器元件的层堆叠 从辐射方向看，并且被配置为使得过滤元件发射第一发射分量并且反射层堆内的第二发射分量，第二反射分量在被滤波元件反射之后经受 偏转过程或吸收发射过程，并且偏转或发射的辐射应该再次进入过滤元件。 版权所有（C）2008，JPO＆INPIT

    MANUFACTURING METHOD FOR SEMICONDUCTOR LASER ELEMENT
    6.
    发明专利
    MANUFACTURING METHOD FOR SEMICONDUCTOR LASER ELEMENT 审中-公开

    公开(公告)号：JP2002124729A

    公开(公告)日：2002-04-26

    申请号：JP2001249229

    申请日：2001-08-20

    Applicant: OSRAM OPTO SEMICONDUCTORS GMBH

    Inventor： ACKLIN BRUNO ,  GROETSCH STEFAN

    IPC: H01L21/301 ,  H01L21/48 ,  H01S5/024

    Abstract: PROBLEM TO BE SOLVED: To provide an improved manufacturing method, for a semiconductor laser element, in which a semiconductor substrate can be attached at low costs and simply. SOLUTION: The manufacturing method for the semiconductor laser element is provided with a step in which a cooling element is manufactured by using an electrical insulating platelike substrate (1) comprising the main surface covered with a metal layer, a step in which the metal layer is structured into a plurality of chip mounting regions (2), a step in which a plurality of semiconductor laser chips (11) are mounted and a step in which the cooling element is divided into a plurality of semiconductor laser elements equipped with at least one each of a semiconductor laser chip and a part of the cooling element.

    LIGHT-EMITTING DIODE ASSEMBLY
    8.
    发明申请
    LIGHT-EMITTING DIODE ASSEMBLY 审中-公开
    LED的配置

    公开(公告)号：WO2006002603A2

    公开(公告)日：2006-01-12

    申请号：PCT/DE2005000904

    申请日：2005-05-18

    Applicant: OSRAM OPTO SEMICONDUCTORS GMBH ,  BOGNER GEORG ,  GROETSCH STEFAN ,  WAITL GUENTER ,  WANNINGER MARIO

    Inventor： BOGNER GEORG ,  GROETSCH STEFAN ,  WAITL GUENTER ,  WANNINGER MARIO

    IPC: H01L33/58 ,  H01L33/60 ,  H01L33/00

    CPC classification number: H01L33/62 ,  H01L33/58 ,  H01L33/60 ,  H01L33/64 ,  H01L2924/0002 ,  H01L2924/00

    Abstract: The invention relates to a light-emitting diode assembly comprising at least one light-emitting chip (1) with a radiation disengaging surface (2), via which the greater part of the electromagnetic radiation (13) that is generated in said chip emerges in a primary emission direction, a housing (5), which laterally surrounds the light-emitting chip (1) and a reflective lens (6), which is situated downstream of the disengaging surface (2) in the primary emission direction. The light-emitting diode assembly is particularly suitable for use in equipment such as camera mobile phones, digital cameras or video cameras.

    Abstract translation: 它是指定一个发光二极管阵列，包括（1）具有一个辐射输出的至少一个发光二极管芯片（2），通过该多数在LED芯片中产生的电磁辐射（13）在主发射方向射出，壳体（5）（LED芯片 包围1）侧，并布置在所述主辐射方向的辐射（2）的下游的反射光学系统（6）。 LED布置是特别适合于在设备如照相手机，数码相机或视频相机。

    SEMICONDUCTOR DEVICE WITH A COOLING ELEMENT
    9.
    发明申请
    SEMICONDUCTOR DEVICE WITH A COOLING ELEMENT 审中-公开
    与冷却元件半导体器件

    公开(公告)号：WO2004017476A2

    公开(公告)日：2004-02-26

    申请号：PCT/DE0301906

    申请日：2003-06-10

    Applicant: OSRAM OPTO SEMICONDUCTORS GMBH ,  GROETSCH STEFAN

    Inventor： GROETSCH STEFAN

    IPC: H01S5/024 ,  H01L23/473 ,  H01S5/40 ,  H01S5/00

    CPC classification number: H01S5/4025 ,  H01L23/473 ,  H01L2924/0002 ,  H01S5/02272 ,  H01S5/02423 ,  H01S5/02484 ,  H01L2924/00

    Abstract: The invention relates to a semiconductor device with a semiconductor element (12), in particular, a power laser diode bar, arranged on a cooling element (20), whereby said cooling element (20) comprises a cooling channel (26) in the interior thereof, for the introduction of a coolant. The cooling channel (26) comprises microstructures in at least one region (32) for an effective heat transfer to the coolant. The semiconductor element (12) essentially completely overlaps the region (32) of the cooling channel (26) comprising the microstructures. An intermediate support (16) is arranged between the semiconductor element (12) and the cooling element (20), which is arranged and embodied to compensate for the mechanical tensions arising between the semiconductor element (12) and the cooling element (20) as a result of differing thermal expansions of the semiconductor element (12) and the cooling element (12). The material of the cooling element (20) has a particularly preferred high modulus of elasticity such that the compensation essentially occurs within the elastic expansion region.

    Abstract translation: 包括布置的冷却元件（20）上，特别是功率激光二极管条的半导体器件（12）一种半导体装置，所述冷却元件（20）在其内部包含用于引导冷却剂的冷却通道（26）。 所述冷却通道（26）具有一个有效的热传递到冷却剂中的至少一个区域（32）的微结构。 的半导体器件（12）基本上完全重叠有具有冷却通道（26）的部分（32）的微结构。 的半导体器件（12）和所述冷却元件（20）之间布置有被布置和设计成使得它（存在由于半导体部件之间的半导体部件（12）和冷却元件（20）的机械张力的不同的热膨胀的载体（16）之间 12）和冷却元件（20）被补偿。 冷却元件（20）的材料，特别优选具有弹性的高模量，使得补偿在弹性伸长范围内基本上进行。

    RADIATION-EMITTING COMPONENT
    10.
    发明申请
    RADIATION-EMITTING COMPONENT 审中-公开
    辐射分量

    公开(公告)号：WO2009036731A3

    公开(公告)日：2009-05-28

    申请号：PCT/DE2008001448

    申请日：2008-08-28

    Applicant: OSRAM OPTO SEMICONDUCTORS GMBH ,  GROETSCH STEFAN ,  MARFELD JAN ,  SORG JOERG ERICH ,  ENGL MORITZ ,  KOEHLER STEFFEN

    Inventor： GROETSCH STEFAN ,  MARFELD JAN ,  SORG JOERG ERICH ,  ENGL MORITZ ,  KOEHLER STEFFEN

    IPC: H01L33/00

    CPC classification number: H01L33/60 ,  H01L33/44 ,  H01L33/58 ,  H01L2924/0002 ,  H01L2924/00

    Abstract: The invention relates to a radiation-emitting component (8), which comprises a semiconductor layer stack (10) having an active region (12), which is configured for emitting electromagnetic radiation (R), and at least one surface (14, 15, 16, 17) of the semiconductor layer stack (10) or an optical element (18, 20), which is configured for transmitting the electromagnetic radiation (R), wherein the surface (14, 15, 16, 17) has a normal vector (N), wherein on the at least one surface (14, 15, 16, 17) of the semiconductor layer stack (10) or of the optical element (18, 20), the electromagnetic radiation (R) penetrating said surface, an anti-reflection layer (30) is disposed and configured such that it has minimum reflection for a predetermined wavelength at an observation angle (alpha) relative to the normal vector (N) of the surface (14, 15, 16, 17), at which angle the increase in a zonal light flux of the electromagnetic radiation (R) approximately has a maximum.

    Abstract translation: 发射辐射的装置（8），其具有具有有源区（12），其被设计用于将电磁辐射（R）的发光的半导体层堆叠（10），和半导体层堆叠中的至少一个表面（14，15，16，17）（10） 或形成于电磁辐射（R）的传输，所述光学元件（18，20），其中，所述表面（14，15，16，17）包括一法线向量（N），其中至少一个表面（14，15，16上 ，17）在半导体层堆叠（10）或通过该电磁辐射（R）通过，低于最小反射布置的防反射层（30），并且形成为使得它们对于给定的波长的光元件（18，20）的 一个所述表面（14，15，16，17）相关的视场角（阿尔法）的法线向量（N），其中，所述电磁辐射（R）的带状光束的增加大约是 有一个最大值。

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