公开(公告)号：CA2616268A1

公开(公告)日：2007-02-01

申请号：CA2616268

申请日：2006-07-20

Applicant: QUALCOMM INC

Inventor： CHUI CLARENCE ,  CHUNG WONSUK ,  GANTI SURYA PRAKASH ,  KOTHARI MANISH ,  MILES MARK W ,  SAMPSELL JEFFREY B ,  SASAGAWA TERUO

IPC: B81B3/00 ,  G02B26/00

Abstract: Embodiments of MEMS devices comprise a conductive movable layer spaced apart from a conductive fixed layer by a gap, and supported by rigid support structures, or rivets, overlying depressions in the conductive movable layer , or by posts underlying depressions in the conductive movable layer. In certa in embodiments, portions of the rivet structures extend through the movable lay er and contact underlying layers. In other embodiments, the material used to fo rm the rigid support structures may also be used to passivate otherwise exposed electrical leads in electrical connection with the MEMS devices, protecting the electrical leads from damage or other interference.

公开(公告)号：BRPI0612997A2

公开(公告)日：2010-12-14

申请号：BRPI0612997

申请日：2006-07-20

Applicant: QUALCOMM INC

Inventor： CHUI CLARENCE ,  CHUNG WONSUK ,  GANTI SURYA PRAKASH ,  KOTHARI MANISH ,  MILES MARK W ,  SASAGAWA TERUO ,  SAMPSELL JEFFREY B

IPC: B81B3/00 ,  G02B26/00

Abstract: Embodiments of MEMS devices comprise a conductive movable layer spaced apart from a conductive fixed layer by a gap, and supported by rigid support structures, or rivets, overlying depressions in the conductive movable layer, or by posts underlying depressions in the conductive movable layer. In certain embodiments, both rivets and posts may be used. In certain embodiments, these support structures are formed from rigid inorganic materials, such as metals or oxides. In certain embodiments, etch barriers may also be deposited to facilitate the use of materials in the formation of support structures which are not selectively etchable with respect to other components within the MEMS device.

公开(公告)号：WO2007084317A3

公开(公告)日：2007-10-04

申请号：PCT/US2007000698

申请日：2007-01-11

Applicant: QUALCOMM INC ,  CHUNG WONSUK ,  ZEE STEVE ,  SASAGAWA TERUO

Inventor： CHUNG WONSUK ,  ZEE STEVE ,  SASAGAWA TERUO

IPC: B81C1/00

CPC classification number: B81C1/00801 ,  B81B2201/047 ,  B81C2201/014 ,  G02B26/001 ,  Y10T428/31678

Abstract: The fabrication of a MEMS device such as an interferometric modulator is improved by employing an etch stop layer 104b between a sacrificial layer and an electrode 14a, 14b, 14c. The etch stop 104b may reduce undesirable over-etching of the sacrificial layer and the electrode 14a, 14b, 14c. The etch stop layer 104b may also serve as a barrier layer, buffer layer, and/or template layer. The etch stop layer 104b may include silicon-rich silicon nitride.

Abstract translation: 通过在牺牲层与电极14a，14b，14c之间采用蚀刻停止层104b来改善诸如干涉式调制器的MEMS装置的制造。 蚀刻停止层104b可以减少牺牲层和电极14a，14b，14c的不希望的过度蚀刻。 蚀刻停止层104b也可以用作阻挡层，缓冲层和/或模板层。 蚀刻停止层104b可以包括富硅氮化硅。

公开(公告)号：WO2007123820A3

公开(公告)日：2008-01-03

申请号：PCT/US2007008564

申请日：2007-04-05

Applicant: QUALCOMM INC ,  SASAGAWA TERUO ,  KOGUT LIOR ,  TUNG MING-HAU

Inventor： SASAGAWA TERUO ,  KOGUT LIOR ,  TUNG MING-HAU

IPC: B81C1/00

CPC classification number: B81B3/0008 ,  G02B26/001

Abstract: Methods of making MEMS devices including interferometric modulators involve depositing various layers, including stationary layers, movable layers and sacrificial layers, on a substrate. A non-planar surface is formed on one or more layers by flowing an etchant through a permeable layer. In one embodiment the non-planar surface is formed on a sacrificial layer. A movable layer formed over the non-planar surface of the sacrificial layer results in a non-planar interface between the sacrificial and movable layers. Removal of the sacrificial layer results in a released MEMS device having reduced contact area between the movable and stationary layers when the MEMS device is actuated. The reduced contact area results in lower adhesion forces and reduced stiction during actuation of the MEMS device. These methods may be used to manufacture released and unreleased interferometric modulators.

Abstract translation: 制造包括干涉式调制器的MEMS器件的方法包括在衬底上沉积包括固定层，可移动层和牺牲层的各种层。 通过使蚀刻剂流过可渗透层而在一个或多个层上形成非平面表面。 在一个实施例中，非平面表面形成在牺牲层上。 形成在牺牲层的非平面表面上的可移动层导致牺牲层和可移动层之间的非平面界面。 牺牲层的去除导致释放的MEMS器件在MEMS器件致动时具有减小可移动层和固定层之间的接触面积。 减小的接触面积导致MEMS器件的致动期间较低的粘附力和降低的静摩擦力。 这些方法可用于制造释放和未释放的干涉式调制器。

公开(公告)号：WO2007078495A3

公开(公告)日：2007-12-06

申请号：PCT/US2006045925

申请日：2006-11-30

Applicant: QUALCOMM INC ,  WANG CHUN-MING ,  LAN JEFFREY ,  SASAGAWA TERUO

Inventor： WANG CHUN-MING ,  LAN JEFFREY ,  SASAGAWA TERUO

IPC: B81B3/00 ,  G02B26/00 ,  G02B26/08

CPC classification number: B81C1/00047 ,  B81B2201/047 ,  B81C2201/0108 ,  B81C2201/0111 ,  G02B26/001

Abstract: MEMS devices (such as interferometric modulators) may be fabricated using a sacrificial layer that contains a heat vaporizable polymer to form a gap between a moveable layer and a substrate. One embodiment provides a method of making a MEMS device that includes depositing a polymer layer over a substrate, forming an electrically conductive layer over the polymer layer, and vaporizing at least a portion of the polymer layer to form a cavity between the substrate and the electrically conductive layer. Another embodiment provides a method for making an interferometric modulator that includes providing a substrate, depositing a first electrically conductive material over at least a portion of the substrate, depositing a sacrificial material over at least a portion of the first electrically conductive material, depositing an insulator over the substrate and adjacent to the sacrificial material to form a support structure, and depositing a second electrically conductive material over at least a portion of the sacrificial material, the sacrificial material being removable by heat-vaporization to thereby form a cavity between the first electrically conductive layer and the second electrically conductive layer.

Abstract translation: MEMS器件（诸如干涉式调制器）可以使用含有可热蒸发聚合物的牺牲层来制造，以在可移动层和衬底之间形成间隙。 一个实施例提供了一种制造MEMS器件的方法，该方法包括：在衬底上沉积聚合物层;在聚合物层上形成导电层;以及蒸发至少一部分聚合物层，以在衬底和电气之间形成空腔 导电层。 另一个实施例提供了一种制造干涉式调制器的方法，该方法包括提供衬底，在衬底的至少一部分上沉积第一导电材料，在第一导电材料的至少一部分上沉积牺牲材料，沉积绝缘体 在衬底上并且与牺牲材料相邻以形成支撑结构，以及在牺牲材料的至少一部分上沉积第二导电材料，牺牲材料通过热汽化可去除，从而在第一电气 导电层和第二导电层。