Abstract:
Apparatus and methods are provided for a temperature-compensated oscillator adapted to receive an input reference current. The apparatus and methods include or provide a temperature coefficient control circuit adapted to adjust the input reference current based on temperature information, wherein the temperature coefficient control circuit receives a first signal corresponding to the temperature information at a first signal node, and a second signal corresponding to a trimmed bias signal at a second signal node.
Abstract:
A charge pump system can provide multiple regulated output levels, including several concurrently, in an arrangement that can reduce the area and power consumption of such a high voltage generation system. The charge pump system can be dynamically reconfigurable based on output requirements. When output level is low, but required for a large AC, DC load, the system is configured in parallel to share the load. When a higher output is required, such as for a programming in a non-volatile memory, the system is configured in serial to generate the desired high output level. The exemplary embodiment uses all of the pump units in each operation and, hence, is able to be optimized for smaller pump area and less power consumption, while still delivering the same pump ability as larger, more power consuming arrangements.
Abstract:
A high voltage switch is presented that, rather than relying upon a charge pump to boost the voltage applied to the switches gate in order to compensate for the switch's threshold voltage, a combination of high voltage devices to eliminate the threshold voltage from the switch. This will save on the needed circuit area and reduce the current and, consequently, power consumption. In the exemplary embodiment, the switch circuit passes an input voltage from an input node to an output node in response to an enable signal. The switch includes a level shifter connected to the input node and is connected to receive the enable signal to provide the input voltage as output when the enable signal is asserted. The circuit also includes a first depletion type NMOS transistor that is connected between the input node and a first intermediate node and having a gate connected to receive the output of the level shifter, and a PMOS transistor that is connected between the first intermediate node and the output node and having a gate connected to receive an inverted form of the enable signal.
Abstract:
In a nonvolatile memory array that stores randomized data, the program level - the number of states per cell stored in a population of memory cells - is determined from the total current passing through the population of memory cells under read conditions, as observed on a common line, for example a source line in NAND flash memory.
Abstract:
A charge pump system uses a dynamic switching approach, where the pump connections are independent of the load for each output. One large pump is designed to be shared between all of the outputs for use during the ramp up during recovery, with each output level also have one designated pump to maintain its level when under regulation. For a three output example, this corresponds to one large and three small pumps. Each small pump is designed with capability that can maintain its output at its regulation level. Each of these pumps can be tailored to the corresponding output level, such as the number of stages being higher in the pump to supply the higher output level. The large pump unit is constructed to be ample to provide sufficient drive to be able to assist in the ramp up phase for all of the outputs and has as many switches needed to connect the pump with all the needed outputs.
Abstract:
A circuit for supplying a high voltage to load is described. An example of such a circuit could be used in the peripheral circuitry of a non-volatile memory device for supplying a program voltage from a charge pump to a selected word line. The circuit includes a charge pump that generates the high voltage and decoding circuitry that is connected to receive this high voltage and selectively apply it to a load. The decoding circuitry receives the high voltage through a switch, where the switch is of a variable resistance that progressively passes the high voltage in response to a control signal. In a particular example, the switch includes a transistor connected between the charge pump and the decoding circuitry, where the control gate of the transistor is connected to the output of a second charge pump that is connected to receive the high voltage and a settable clock signal as its inputs.