1.
    发明专利
    未知

    公开(公告)号:DE68921004D1

    公开(公告)日:1995-03-16

    申请号:DE68921004

    申请日:1989-11-17

    Abstract: The device for protection against the short circuit of an MOS-type power device comprises at least one secondary branch circuit (2, 3) arranged in parallel with a main branch circuit (1) which includes the power transistor (T1). The secondary branch (2, 3) includes a control MOS transistor (T2, T3) having the same characteristics as the power transistor (T1) under control and the ability to conduct a current equal to a fraction of that flowing through the power transistor (T1). The gate of the control transistor (T2, T3) is connected directly with that of the power transistor (T1). The secondary branch also includes means (T4, T5, T6, R2, R3) sensitive to temperature which, in the case of a current flow corresponding to the short circuit current of the power transistor (T1), act on the gate common to the control and to the power transistors (T2, T3; T1) so as to lower its voltage and thus limit the conduction of same.

    2.
    发明专利
    未知

    公开(公告)号:DE68921004T2

    公开(公告)日:1995-09-21

    申请号:DE68921004

    申请日:1989-11-17

    Abstract: The device for protection against the short circuit of an MOS-type power device comprises at least one secondary branch circuit (2, 3) arranged in parallel with a main branch circuit (1) which includes the power transistor (T1). The secondary branch (2, 3) includes a control MOS transistor (T2, T3) having the same characteristics as the power transistor (T1) under control and the ability to conduct a current equal to a fraction of that flowing through the power transistor (T1). The gate of the control transistor (T2, T3) is connected directly with that of the power transistor (T1). The secondary branch also includes means (T4, T5, T6, R2, R3) sensitive to temperature which, in the case of a current flow corresponding to the short circuit current of the power transistor (T1), act on the gate common to the control and to the power transistors (T2, T3; T1) so as to lower its voltage and thus limit the conduction of same.

    4.
    发明专利
    未知

    公开(公告)号:DE69612829D1

    公开(公告)日:2001-06-21

    申请号:DE69612829

    申请日:1996-01-15

    Abstract: A voltage booster circuit (30) presenting a pull-up capacitor (48) connected to the supply line (37) via a PMOS switching transistor (46). The other terminal (42) of the pull-up capacitor is supplied with a pull-up voltage (V1) switching between a first value determining charging of the capacitor, and a second value higher than the first and determining pull-up of the capacitor. A negative voltage source (49, 47) presents an output (55) connected to the control terminal of a switch transistor (46), and generates a negative voltage of a value lower than the first pull-up voltage value when charging the capacitor, so as to saturate the switch transistor and charge the capacitor to a voltage close to the supply voltage.

    6.
    发明专利
    未知

    公开(公告)号:DE69612829T2

    公开(公告)日:2001-09-27

    申请号:DE69612829

    申请日:1996-01-15

    Abstract: A voltage booster circuit (30) presenting a pull-up capacitor (48) connected to the supply line (37) via a PMOS switching transistor (46). The other terminal (42) of the pull-up capacitor is supplied with a pull-up voltage (V1) switching between a first value determining charging of the capacitor, and a second value higher than the first and determining pull-up of the capacitor. A negative voltage source (49, 47) presents an output (55) connected to the control terminal of a switch transistor (46), and generates a negative voltage of a value lower than the first pull-up voltage value when charging the capacitor, so as to saturate the switch transistor and charge the capacitor to a voltage close to the supply voltage.

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