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    1.
    发明专利
    未知

    公开(公告)号：DE68921004D1

    公开(公告)日：1995-03-16

    申请号：DE68921004

    申请日：1989-11-17

    Applicant: SGS THOMSON MICROELECTRONICS ,  CONS RIC MICROELETTRONICA

    Inventor： ZISA MICHELE ,  SCILLA GIUSEPPE ,  PALARA SERGIO

    IPC: H01L29/78 ,  H01L27/02 ,  H01L27/04 ,  H03K17/08 ,  H03K17/082 ,  H03K17/14

    Abstract: The device for protection against the short circuit of an MOS-type power device comprises at least one secondary branch circuit (2, 3) arranged in parallel with a main branch circuit (1) which includes the power transistor (T1). The secondary branch (2, 3) includes a control MOS transistor (T2, T3) having the same characteristics as the power transistor (T1) under control and the ability to conduct a current equal to a fraction of that flowing through the power transistor (T1). The gate of the control transistor (T2, T3) is connected directly with that of the power transistor (T1). The secondary branch also includes means (T4, T5, T6, R2, R3) sensitive to temperature which, in the case of a current flow corresponding to the short circuit current of the power transistor (T1), act on the gate common to the control and to the power transistors (T2, T3; T1) so as to lower its voltage and thus limit the conduction of same.

    2.
    发明专利
    未知

    公开(公告)号：DE68921004T2

    公开(公告)日：1995-09-21

    申请号：DE68921004

    申请日：1989-11-17

    Applicant: SGS THOMSON MICROELECTRONICS ,  CONS RIC MICROELETTRONICA

    Inventor： ZISA MICHELE ,  SCILLA GIUSEPPE ,  PALARA SERGIO

    IPC: H01L29/78 ,  H01L27/02 ,  H01L27/04 ,  H03K17/08 ,  H03K17/082 ,  H03K17/14

    Abstract: The device for protection against the short circuit of an MOS-type power device comprises at least one secondary branch circuit (2, 3) arranged in parallel with a main branch circuit (1) which includes the power transistor (T1). The secondary branch (2, 3) includes a control MOS transistor (T2, T3) having the same characteristics as the power transistor (T1) under control and the ability to conduct a current equal to a fraction of that flowing through the power transistor (T1). The gate of the control transistor (T2, T3) is connected directly with that of the power transistor (T1). The secondary branch also includes means (T4, T5, T6, R2, R3) sensitive to temperature which, in the case of a current flow corresponding to the short circuit current of the power transistor (T1), act on the gate common to the control and to the power transistors (T2, T3; T1) so as to lower its voltage and thus limit the conduction of same.

    METHOD AND CIRCUIT FOR GENERATING ANALYSIS SIGNAL WHEN CURRENT FLOWING THROUGH POWER TRANSISTOR REACHES LEVEL CLOSETO LIMIT CURRENT
    3.
    发明专利
    METHOD AND CIRCUIT FOR GENERATING ANALYSIS SIGNAL WHEN CURRENT FLOWING THROUGH POWER TRANSISTOR REACHES LEVEL CLOSETO LIMIT CURRENT 失效

    公开(公告)号：JPH07260838A

    公开(公告)日：1995-10-13

    申请号：JP31904394

    申请日：1994-11-29

    Applicant: ST MICROELECTRONICS SRL ,  CONS RIC MICROELETTRONICA

    Inventor： PALARA SERGIO ,  SUERI STEFANO

    IPC: G01R31/26 ,  F02P3/05 ,  G01R19/165 ,  H03K17/08 ,  H03K17/64

    Abstract: PURPOSE: To generate a diagnostic signal indicating reach of current flowing through a power transistor in a presetting level by driving the first circuit, in which maximum current is restricted by a single signal serving as a function of the voltage difference, and a threshold circuit generating the diagnostic signal. CONSTITUTION: A comparator is constructed of a differential amplifier A which can generate a signal as a function of the difference between a reverence voltage E1 and a voltage in a sensing resistor RS, through which current IC flowing in a power transistor T1 (and a load L) flows. The signal generated by the comparator A drives two circuits. The first circuit (LIMITATOR) generates a restriction signal for the maximum current flowing in the transistor T1 and works on a driving circuit (DRIVE) transmitting driving current to the transistor T1 . The second circuit (DIAGNOSTIC) is set by the first circuit and generates a diagnostic signal VD, after the current IC reaches a value smaller than the limit value for the current IC by the previously set value.

    VOLTAGE REFERENCE CIRCUIT WITH NEGATIVE LINEAR TEMPERATURE CHANGE
    5.
    发明专利
    VOLTAGE REFERENCE CIRCUIT WITH NEGATIVE LINEAR TEMPERATURE CHANGE 失效

    公开(公告)号：JPH07295667A

    公开(公告)日：1995-11-10

    申请号：JP32961594

    申请日：1994-12-02

    Applicant: CONS RIC MICROELETTRONICA ,  ST MICROELECTRONICS SRL

    Inventor： SCACCIANOCE SALVATORE ,  PALARA SERGIO ,  AIELLO NATALE

    IPC: G05F3/30

    Abstract: PURPOSE: To provide a circuit that generates a reference voltage with negative temperature coefficient together with a band gap reference voltage with positive temperature coefficient. CONSTITUTION: This circuit includes a network consisting of a Vbe voltage multiplier circuit (K'Vbe) circulating a properly stabilized current against change in a supply voltage between an output node A of an amplifier and a band gap voltage generating network, at least one resistor R connected between a band gap voltage node and ground, and resistive voltage dividers R1, R2 connected to between an output node and ground.

    7.
    发明专利
    未知

    公开(公告)号：DE69326543D1

    公开(公告)日：1999-10-28

    申请号：DE69326543

    申请日：1993-04-28

    Applicant: CONS RIC MICROELETTRONICA

    Inventor： PALARA SERGIO

    IPC: H01L29/73 ,  H01L21/331 ,  H01L21/822 ,  H01L27/02 ,  H01L27/04 ,  H01L27/06 ,  H01L29/732 ,  H01L29/78 ,  H01L27/08

    Abstract: A structure of an electronic device having a predetermined unidirectional conduction threshold, being formed on a chip of an N-semiconductor material, comprises a plurality of isolated N-regions (16a-c), each bounded laterally by an isolating region (15a-c) and at the bottom by two buried P- and N-regions which form in combination a junction with a predetermined reverse conduction threshold, and means (15a,18,17b,15b,17c) of connecting the junctions of the various isolated regions serially together in the same conduction sense; the buried N-region of the first junction (Z1) in the series is connected to a common electrode (C), which also is one terminal of the device, over an internal path (R) of the N-material of the chip, and the buried P-region of the last junction (Zn) in the series contains an additional buried N-region (14d) which is connected electrically to a second terminal (18a) of the device.

    9.
    发明专利
    未知

    公开(公告)号：DE69224827D1

    公开(公告)日：1998-04-23

    申请号：DE69224827

    申请日：1992-05-28

    Applicant: CONS RIC MICROELETTRONICA

    Inventor： PALARA SERGIO

    IPC: H01L29/06 ,  H01L29/40 ,  H01L29/8605 ,  H01L29/86

    Abstract: A spiral resistor (1), being of a type formed on a semiconductor substrate (2) to withstand high voltages, comprises at least one thin field-plate layer (6) covering said substrate (2) between adjacent turns (5) of the resistor. This prevents the well-known phenomenon of the "phantom gate" from occurring which would result in the characteristics of spiral resistors deteriorating over time.

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