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公开(公告)号:DE68921004T2
公开(公告)日:1995-09-21
申请号:DE68921004
申请日:1989-11-17
Applicant: SGS THOMSON MICROELECTRONICS , CONS RIC MICROELETTRONICA
Inventor: ZISA MICHELE , SCILLA GIUSEPPE , PALARA SERGIO
Abstract: The device for protection against the short circuit of an MOS-type power device comprises at least one secondary branch circuit (2, 3) arranged in parallel with a main branch circuit (1) which includes the power transistor (T1). The secondary branch (2, 3) includes a control MOS transistor (T2, T3) having the same characteristics as the power transistor (T1) under control and the ability to conduct a current equal to a fraction of that flowing through the power transistor (T1). The gate of the control transistor (T2, T3) is connected directly with that of the power transistor (T1). The secondary branch also includes means (T4, T5, T6, R2, R3) sensitive to temperature which, in the case of a current flow corresponding to the short circuit current of the power transistor (T1), act on the gate common to the control and to the power transistors (T2, T3; T1) so as to lower its voltage and thus limit the conduction of same.
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公开(公告)号:DE69226004T2
公开(公告)日:1999-02-11
申请号:DE69226004
申请日:1992-07-17
Applicant: SGS THOMSON MICROELECTRONICS , CONS RIC MICROELETTRONICA
Inventor: ZISA MICHELE , BELLUSO MASSIMILIANO , PAPARO MARIO
IPC: H03K4/58 , H03K5/02 , H03K17/06 , H03F3/217 , H03K17/687 , H03K19/017
Abstract: In a bootstrap circuit for a power MOS transistor in the high driver configuration, comprising a first capacitor (C1) chargeable to a first voltage function of the supply voltage of the power transistor (T1), there is present a second capacitor (C2) combined with the first capacitor (C1) in such a way as to make available a second voltage higher than the first voltage and the threshold voltage of the power transistor (T1).
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公开(公告)号:DE68921004D1
公开(公告)日:1995-03-16
申请号:DE68921004
申请日:1989-11-17
Applicant: SGS THOMSON MICROELECTRONICS , CONS RIC MICROELETTRONICA
Inventor: ZISA MICHELE , SCILLA GIUSEPPE , PALARA SERGIO
Abstract: The device for protection against the short circuit of an MOS-type power device comprises at least one secondary branch circuit (2, 3) arranged in parallel with a main branch circuit (1) which includes the power transistor (T1). The secondary branch (2, 3) includes a control MOS transistor (T2, T3) having the same characteristics as the power transistor (T1) under control and the ability to conduct a current equal to a fraction of that flowing through the power transistor (T1). The gate of the control transistor (T2, T3) is connected directly with that of the power transistor (T1). The secondary branch also includes means (T4, T5, T6, R2, R3) sensitive to temperature which, in the case of a current flow corresponding to the short circuit current of the power transistor (T1), act on the gate common to the control and to the power transistors (T2, T3; T1) so as to lower its voltage and thus limit the conduction of same.
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公开(公告)号:ITMI912045A1
公开(公告)日:1993-01-25
申请号:ITMI912045
申请日:1991-07-24
Applicant: CONS RIC MICROELETTRONICA , SGS THOMSON MICROELECTRONICS
Inventor: BELLUSO MASSIMILIANO , PAPARO MARIO , ZISA MICHELE
IPC: H03K20060101 , H03F3/217 , H03K4/58 , H03K5/02 , H03K17/06 , H03K17/687 , H03K19/017
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公开(公告)号:ITMI912045D0
公开(公告)日:1991-07-24
申请号:ITMI912045
申请日:1991-07-24
Applicant: CONS RIC MICROELETTRONICA , SGS THOMSON MICROELECTRONICS
Inventor: ZISA MICHELE , BELLUSO MASSIMILIANO , PAPARO MARIO
IPC: H03K4/58 , H03F3/217 , H03K5/02 , H03K17/06 , H03K17/687 , H03K19/017 , H03K
Abstract: In a bootstrap circuit for a power MOS transistor in the high driver configuration, comprising a first capacitor (C1) chargeable to a first voltage function of the supply voltage of the power transistor (T1), there is present a second capacitor (C2) combined with the first capacitor (C1) in such a way as to make available a second voltage higher than the first voltage and the threshold voltage of the power transistor (T1).
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公开(公告)号:JPH05252006A
公开(公告)日:1993-09-28
申请号:JP19823192
申请日:1992-07-24
Applicant: CONS RIC MICROELETTRONICA , ST MICROELECTRONICS SRL
Inventor: ZISA MICHELE , BELLUSO MASSIMILIANO , PAPARO MARIO
IPC: H03F3/217 , H03K4/58 , H03K5/02 , H03K17/06 , H03K17/687 , H03K19/017
Abstract: PURPOSE: To actualize the bootstrap circuit which drives a power MOS transistor(TR) with high-potential side constitution wherein the power MOS TR is able to operate with a low-level supply voltage when operating at a high switching frequency. CONSTITUTION: The bootstrap circuit for the power MOS TR of the high- potential side driving constitution includes a 1st capacitor C1 which can be charged to a 1st voltage level of the supply voltage of the power TR T1. A 2nd capacitor C2 is provided in combination with the 1st capacitor C1 so that a 1st voltage and a 2nd voltage higher than the threshold voltage of the power TR T1 can be used.
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公开(公告)号:DE69226004D1
公开(公告)日:1998-07-30
申请号:DE69226004
申请日:1992-07-17
Applicant: CONS RIC MICROELETTRONICA , ST MICROELECTRONICS SRL
Inventor: ZISA MICHELE , BELLUSO MASSIMILIANO , PAPARO MARIO
IPC: H03K4/58 , H03K5/02 , H03K17/06 , H03F3/217 , H03K17/687 , H03K19/017
Abstract: In a bootstrap circuit for a power MOS transistor in the high driver configuration, comprising a first capacitor (C1) chargeable to a first voltage function of the supply voltage of the power transistor (T1), there is present a second capacitor (C2) combined with the first capacitor (C1) in such a way as to make available a second voltage higher than the first voltage and the threshold voltage of the power transistor (T1).
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公开(公告)号:IT1226557B
公开(公告)日:1991-01-24
申请号:IT2156188
申请日:1988-07-29
Applicant: SGS THOMSON MICROELECTRONICS
Inventor: ZISA MICHELE , PALARA SERGIO
IPC: H02H9/04 , H03K17/06 , H03K17/0814 , H03K17/567 , H03K17/687 , H03K17/695 , H03H
Abstract: The power device (2) has a power supply terminal (3), a load terminal (5) connected to earth by means of an inductive load (1) and a control terminal (6) connected to a circuit (7) with inlet (8) for an alternating control signal. Whenever the power device (2) is turned off, a switching element (10, 30) hitches the voltage of the control terminal (6) to that of the load terminal (5), which is forced to fall by the inductive load. There is provided a discharge circuit (2, 18, 19; 21, 22) of the inductive load (1), which includes means (18, 21) having a predetermined threshold which are fired when the voltage of the load terminal (5) falls down to said predetermined threshold.
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公开(公告)号:IT8821561D0
公开(公告)日:1988-07-29
申请号:IT2156188
申请日:1988-07-29
Applicant: SGS THOMSON MICROELECTRONICS
Inventor: ZISA MICHELE , PALARA SERGIO
IPC: H02H9/04 , H03K17/06 , H03K17/0814 , H03K17/567 , H03K17/687 , H03K17/695 , H03H
Abstract: The power device (2) has a power supply terminal (3), a load terminal (5) connected to earth by means of an inductive load (1) and a control terminal (6) connected to a circuit (7) with inlet (8) for an alternating control signal. Whenever the power device (2) is turned off, a switching element (10, 30) hitches the voltage of the control terminal (6) to that of the load terminal (5), which is forced to fall by the inductive load. There is provided a discharge circuit (2, 18, 19; 21, 22) of the inductive load (1), which includes means (18, 21) having a predetermined threshold which are fired when the voltage of the load terminal (5) falls down to said predetermined threshold.
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公开(公告)号:DE68924107D1
公开(公告)日:1995-10-12
申请号:DE68924107
申请日:1989-06-08
Applicant: SGS THOMSON MICROELECTRONICS
Inventor: ZISA MICHELE , PALARA SERGIO
IPC: H02H9/04 , H03K17/06 , H03K17/0814 , H03K17/567 , H03K17/687 , H03K17/695 , H03K17/08
Abstract: The power device (2) has a power supply terminal (3), a load terminal (5) connected to earth by means of an inductive load (1) and a control terminal (6) connected to a circuit (7) with inlet (8) for an alternating control signal. Whenever the power device (2) is turned off, a switching element (10, 30) hitches the voltage of the control terminal (6) to that of the load terminal (5), which is forced to fall by the inductive load. There is provided a discharge circuit (2, 18, 19; 21, 22) of the inductive load (1), which includes means (18, 21) having a predetermined threshold which are fired when the voltage of the load terminal (5) falls down to said predetermined threshold.
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