公开(公告)号：WO2014179366A8

公开(公告)日：2015-04-16

申请号：PCT/US2014035961

申请日：2014-04-29

Applicant: SOLEXEL INC

Inventor： RANA VIRENDRA V ,  MOSLEHI MEHRDAD M ,  KAPUR PAWAN ,  BENJAMIN RATTLE ,  DESHAZER HEATHER ,  COUTANT SOLENE ,  KOMMERA SWAROOP

IPC: H01L31/18 ,  H01L31/024 ,  H01L31/04

CPC classification number: H01L31/0682 ,  H01L21/268 ,  H01L21/324 ,  H01L31/02167 ,  H01L31/022441 ,  H01L31/02363 ,  H01L31/035281 ,  Y02E10/547

Abstract: Annealing solutions providing damage-free laser patterning utilizing auxiliary heating to anneal laser damaged ablation regions are provided herein. Ablation spots on an underlying semiconductor substrate are annealed during or after pulsed laser ablation patterning of overlying transparent passivation layers.

Abstract translation: 本文提供了使用辅助加热来退火激光损伤的烧蚀区域的提供无损伤激光图案的退火解决方案。 在覆盖的透明钝化层的脉冲激光烧蚀图案化期间或之后对底层半导体衬底上的消融点进行退火。