公开(公告)号：AU2013267481A1

公开(公告)日：2015-01-22

申请号：AU2013267481

申请日：2013-05-29

Applicant: COUTANT SOLENE ,  SEUTTER SEAN ,  KOMMERA SWAROOP ,  ANBALAGAN PRANAV ,  SOLEXEL INC ,  KAPUR PAWAN ,  RATTLE BENJAMINE ,  DESHAZER HEATHER ,  DESHPANDE ANAND ,  MOSLEHI MEHRDAD ,  RANA VIRENDRA

Inventor： DESHPANDE ANAND ,  KAPUR PAWAN ,  RANA VIRENDRA V ,  MOSLEHI MEHRDAD M ,  SEUTTER SEAN M ,  DESHAZER HEATHER ,  KOMMERA SWAROOP ,  ANBALAGAN PRANAV ,  RATTLE BENJAMINE E ,  COUTANT SOLENE

IPC: H01L31/04 ,  H01L31/18

Abstract: Fabrication methods and structures relating to multi-level metallization of solar cells are described. In one embodiment, a back contact solar cell comprises a substrate having a substrate having a light receiving frontside surface and a backside surface for forming patterned emitter and non-nested base regions. Interdigitated doped emitter and base regions are formed on a backside surface of a crystalline semiconductor substrate. A patterned electrically insulating layer stack comprising a combination of at least a doped layer and an undoped capping layer is formed on the patterned doped emitter and base regions. A contact metallization pattern is formed comprising emitter metallization electrodes contacting the emitter regions and non-nested base metallization electrodes contacting the base regions wherein the non-nested base metallization electrodes are allowed to go beyond the base regions to overlap at least a portion of said patterned insulator without causing electrical shunts in the solar cell.

公开(公告)号：AU2016200610A1

公开(公告)日：2016-02-25

申请号：AU2016200610

申请日：2016-02-01

Applicant: SOLEXEL INC

Inventor： DESHPANDE ANAND ,  KAPUR PAWAN ,  RANA VIRENDRA V ,  MOSLEHI MEHRDAD M ,  SEUTTER SEAN M ,  DESHAZER HEATHER ,  KOMMERA SWAROOP ,  ANBALAGAN PRANAV ,  RATTLE BENJAMINE E ,  COUTANT SOLENE

IPC: H01L31/04 ,  H01L31/18

Abstract: Fabrication methods and structures relating to multi-level metallization of solar cells are described. In one embodiment, a back contact solar cell comprises a substrate having a substrate having a light receiving frontside surface and a backside surface for forming patterned emitter 5 and non-nested base regions. Interdigitated doped emitter and base regions are formed on a backside surface of a crystalline semiconductor substrate. A patterned electrically insulating layer stack comprising a combination of at least a doped layer and an undoped capping layer is formed on the patterned doped emitter and base regions. A contact metallization pattern is formed comprising emitter metallization electrodes contacting the emitter regions and non 10 nested base metallization electrodes contacting the base regions wherein the non-nested base metallization electrodes are allowed to go beyond the base regions to overlap at least a portion of said patterned insulator without causing electrical shunts in the solar cell.

公开(公告)号：AU2016200610B2

公开(公告)日：2017-12-07

申请号：AU2016200610

申请日：2016-02-01

Applicant: SOLEXEL INC

Inventor： DESHPANDE ANAND ,  KAPUR PAWAN ,  RANA VIRENDRA V ,  MOSLEHI MEHRDAD M ,  SEUTTER SEAN M ,  DESHAZER HEATHER ,  KOMMERA SWAROOP ,  ANBALAGAN PRANAV ,  RATTLE BENJAMINE E ,  COUTANT SOLENE

IPC: H01L31/04 ,  H01L31/18

Abstract: Fabrication methods and structures relating to multi-level metallization of solar cells are described. In one embodiment, a back contact solar cell comprises a substrate having a substrate having a light receiving frontside surface and a backside surface for forming patterned emitter 5 and non-nested base regions. Interdigitated doped emitter and base regions are formed on a backside surface of a crystalline semiconductor substrate. A patterned electrically insulating layer stack comprising a combination of at least a doped layer and an undoped capping layer is formed on the patterned doped emitter and base regions. A contact metallization pattern is formed comprising emitter metallization electrodes contacting the emitter regions and non 10 nested base metallization electrodes contacting the base regions wherein the non-nested base metallization electrodes are allowed to go beyond the base regions to overlap at least a portion of said patterned insulator without causing electrical shunts in the solar cell.

公开(公告)号：MY184055A

公开(公告)日：2021-03-17

申请号：MYPI2014703566

申请日：2013-05-29

Applicant: SOLEXEL INC

Inventor： DESHPANDE ANAND ,  KAPUR PAWAN ,  RANA VIRENDRA V ,  MOSLEHI MEHRDAD M ,  SEUTTER SEAN M ,  DESHAZER HEATHER ,  KOMMERA SWAROOP ,  ANBALAGAN PRANAV ,  RATTLE BENJAMINE E ,  COUTANT SOLENE

Abstract: Fabrication methods and structures relating to multi-level metallization of solar cells are described. In one embodiment, a back contact solar cell comprises a substrate having a substrate having a light receiving frontside surface and a backside surface for forming patterned emitter and non-nested base regions. Interdigitated doped emitter and base regions are formed on a backside surface of a crystalline semiconductor substrate. A patterned electrically insulating layer stack comprising a combination of at least a doped layer and an undoped capping layer is formed on the patterned doped emitter and base regions. A contact metallization pattern is formed comprising emitter metallization electrodes contacting the emitter regions and non-nested base metallization electrodes contacting the base regions wherein the non-nested base metallization electrodes are allowed to go beyond the base regions to overlap at least a portion of said patterned insulator without causing electrical shunts in the solar cell.

公开(公告)号：WO2014179366A8

公开(公告)日：2015-04-16

申请号：PCT/US2014035961

申请日：2014-04-29

Applicant: SOLEXEL INC

Inventor： RANA VIRENDRA V ,  MOSLEHI MEHRDAD M ,  KAPUR PAWAN ,  BENJAMIN RATTLE ,  DESHAZER HEATHER ,  COUTANT SOLENE ,  KOMMERA SWAROOP

IPC: H01L31/18 ,  H01L31/024 ,  H01L31/04

CPC classification number: H01L31/0682 ,  H01L21/268 ,  H01L21/324 ,  H01L31/02167 ,  H01L31/022441 ,  H01L31/02363 ,  H01L31/035281 ,  Y02E10/547

Abstract: Annealing solutions providing damage-free laser patterning utilizing auxiliary heating to anneal laser damaged ablation regions are provided herein. Ablation spots on an underlying semiconductor substrate are annealed during or after pulsed laser ablation patterning of overlying transparent passivation layers.

Abstract translation: 本文提供了使用辅助加热来退火激光损伤的烧蚀区域的提供无损伤激光图案的退火解决方案。 在覆盖的透明钝化层的脉冲激光烧蚀图案化期间或之后对底层半导体衬底上的消融点进行退火。

公开(公告)号：EP2856512A4

公开(公告)日：2015-12-16

申请号：EP13798110

申请日：2013-05-29

Applicant: SOLEXEL INC ,  DESHPANDE ANAND ,  KAPUR PAWAN ,  RANA VIRENDRA V ,  MOSLEHI MEHRDAD M ,  SEUTTER SEAN M ,  DESHAZER HEATHER DAWN ,  KOMMERA SWAROOP ,  ANBALAGAN PRANAV ,  RATTLE BENJAMINE E ,  COUTANT SOLENE

Inventor： DESHPANDE ANAND ,  KAPUR PAWAN ,  RANA VIRENDRA V ,  MOSLEHI MEHRDAD M ,  SEUTTER SEAN M ,  DESHAZER HEATHER ,  KOMMERA SWAROOP ,  ANBALAGAN PRANAV ,  RATTLE BENJAMINE E ,  COUTANT SOLENE

IPC: H01L31/18 ,  H01L31/0216 ,  H01L31/0224 ,  H01L31/068

CPC classification number: H01L31/022441 ,  H01L31/02167 ,  H01L31/0682 ,  H01L31/1804 ,  Y02E10/547 ,  Y02P70/521