公开(公告)号：JPH09246656A

公开(公告)日：1997-09-19

申请号：JP4621896

申请日：1996-03-04

Applicant: SONY CORP

Inventor： KINOSHITA YUKO ,  HINO TOMOKIMI ,  TANIGUCHI OSAMU ,  YOSHIDA HIROSHI ,  OKUYAMA HIROYUKI ,  NAKANO KAZUSHI

IPC: H01L33/06 ,  H01L33/14 ,  H01L33/28 ,  H01L33/30 ,  H01S5/00 ,  H01S5/042 ,  H01S3/18 ,  H01L33/00

Abstract: PROBLEM TO BE SOLVED: To reduce a probability that overflow electrons reach from an active layer to a (p) side electrode structure part and to prolong the file of a semiconductor light-emitting device by a method wherein the distance from the active layer to a multilayer semiconductor part is set at a specified value or higher. SOLUTION: An active layer 7, a p-type clad layer 9 and an n-type clad layer 5, which are arranged holding this active layer 7 between the layers 9 and 5, and a (p) side electrode structure part 12 having a multilayer semiconductor part, which is formed by forming a plurality of kinds of layers comprising at least a constituent material thin film consisting of a ZnFe thin film, are formed. The distance from the layer 7 to a multilayer semiconductor part 13 is set in 3μm or longer. Thereby, as the arrival of overflow electrons to turn from the layer 7 to the structure part 12 can be inhibited, the number of the electrons, which recombine with holes in here, the structure part 12, can be effectively reduced and at the same time, a reduction in light absorption can be contrived and the prolongation of the life of a semiconductor light-emitting device becomes possible.

公开(公告)号：JPH09331082A

公开(公告)日：1997-12-22

申请号：JP14788596

申请日：1996-05-20

Applicant: SONY CORP

Inventor： NAKANO KAZUSHI ,  KINOSHITA YUKO ,  NOGUCHI HIROYASU ,  OKUYAMA HIROYUKI

IPC: H01L33/28 ,  H01S5/00 ,  H01L33/00 ,  H01S3/18

Abstract: PROBLEM TO BE SOLVED: To provide a semiconductor light emitting element enhancing its light emitting efficiency and delaying its deterioration by suppressing generation of a defect species becoming a nonradiative recombination center in a p-type conductive layer. SOLUTION: An n-type clad layer 2, a guide layer 3, an active layer 4, a guide layer 5 and a p-type clad layer 6 formed of II-VI compound semiconductor are sequentially stacked on an n-type GaAs substrate 1. An n-type impurity such as chlorine is added to the layer 2. Nitrogen is added as a p-type impurity to the layer 6. The chlorine of the n-type impurity is added in a smaller amount than the p-type impurity. Thus, in the layer 6, generation of a defect seed becoming a nonradiative recombination center is suppressed.

公开(公告)号：JPH09293937A

公开(公告)日：1997-11-11

申请号：JP4567397

申请日：1997-02-28

Applicant: SONY CORP

Inventor： HINO TOMOKIMI ,  TANIGUCHI OSAMU ,  KINOSHITA YUKO ,  OKUYAMA HIROYUKI ,  NAKANO KAZUSHI ,  OKAMOTO SAKURAKO ,  ISHIBASHI AKIRA

IPC: H01L33/06 ,  H01L33/14 ,  H01L33/28 ,  H01L33/30 ,  H01S5/00 ,  H01S3/18 ,  H01L33/00

Abstract: PROBLEM TO BE SOLVED: To provide a semiconductor light emitting element with which the increase of working voltage when current is applied and the deterioration of an active layer can be prevented using a II-VI group compound semiconductor of long lifetime. SOLUTION: An electron blocking layer, consisting of a II-VI group compound semiconductor, such as a p-type Zn1-x Mgx Se electron blocking layer, for example, is inserted in the part between an active layer 7 and a p-type ZnSe/ZnTe MQW layer 13 such as the interface between a p-type ZnSSE cap layer 10 and a p-type ZnSe contact layer 12, for example, or a Zn1-x Mgx Sy Se1-y electron blocking layer is inserted in the part between the active layer 7 and a p-type ZnMgSSe clad layer 9, or in the p-type ZnMgSSe clad layer 9, and a Zn1-x Mgx Sy Se1-y hole blocking layer is inserted in the part between the active layer 7 and an n-type ZnMgSSe clad layer, or in an n-type ZnMgSSe clad layer.

公开(公告)号：JPH08148761A

公开(公告)日：1996-06-07

申请号：JP28670994

申请日：1994-11-21

Applicant: SONY CORP

Inventor： NAGAI MASAHARU ,  MATSUMOTO OSAMU ,  ITO SATORU ,  OZAWA MASABUMI ,  OHATA TOYOJI ,  ISHIBASHI AKIRA ,  OKUYAMA HIROYUKI ,  HIEI FUTOSHI ,  KINOSHITA YUKO

IPC: H01L33/06 ,  H01L33/12 ,  H01L33/28 ,  H01S5/00 ,  H01S3/18 ,  H01L33/00

Abstract: PURPOSE: To provide a semiconductor light emitting device utilizing a II-VI group compound semiconductor which assures long term stabilized operation with the continuous oscillation under the room temperature. CONSTITUTION: In a semiconductor light emitting device where the principal part 3 of a semiconductor light emitting device using a II-VI group compound semiconductor is formed on a GaAs substrate 1 through lattice matching with this GaAs substrate 1, the principal part 3 of the semiconductor light emitting device is formed on the GaAs substrate 1 through an interface layer sequentially forming at least GaAs buffer layer 11 and ZnSe layer 12 and at least a partial thickness of the ZnSe layer 12 in the side of the GaAs buffer layer is formed as the non-doped ZnSe layer 12a.