Abstract:
In an acoustic sensor (11), a vibrating membrane (22) and a fixed membrane (23) are formed on the upper face of a semiconductor substrate, and an acoustic wave is detected by the change of capacitance between a vibration electrode (22a) of the vibrating membrane (22) and a fixed electrode (23a) of the fixed membrane (23). The fixed membrane(23) is provided with a plurality of sound holes (32) for delivering the acoustic wave from the outside to the vibrating membrane (22), and the fixed electrode (23a) is formed so that the boundary of the edge portion (40) does not intersect the sound holes (32).
Abstract:
In an acoustic sensor (1) of the present invention, a conductive vibrating membrane (14) and a fixed electrode plate (5) are disposed above a silicon substrate (11) with an air gap (22) provided therebetween, and the substrate (11) has an impurity added to a surface thereof.
Abstract:
Provided is an acoustic transducer (11) including: a semiconductor substrate (21); a vibrating membrane (23), provided above the semiconductor substrate (21), including a vibrating electrode (220); and a fixed membrane (23), provided above the semiconductor substrate (21), including a fixed electrode (230), the acoustic transducer detecting a sound wave according to changes in capacitances between the vibrating electrode (220) and the fixed electrode (230), converting the sound wave into electrical signals, and outputting the electrical signals. At least one of the vibrating electrode (220) and the fixed electrode (230) is divided into a plurality of divided electrodes, and the plurality of divided electrodes outputting the electrical signals.