公开(公告)号：DE69517395T2

公开(公告)日：2001-01-18

申请号：DE69517395

申请日：1995-11-27

Applicant: ST MICROELECTRONICS SA

Inventor： BELOT DIDIER ,  BERNARD PATRICK

IPC: G05F3/30 ,  G05F3/26 ,  G05F3/28 ,  H03F3/343 ,  H03K19/00

公开(公告)号：DE69517395D1

公开(公告)日：2000-07-13

申请号：DE69517395

申请日：1995-11-27

Applicant: ST MICROELECTRONICS SA

Inventor： BELOT DIDIER ,  BERNARD PATRICK

IPC: G05F3/30 ,  G05F3/26 ,  G05F3/28 ,  H03F3/343 ,  H03K19/00

公开(公告)号：FR2782581B1

公开(公告)日：2000-09-22

申请号：FR9810476

申请日：1998-08-18

Applicant: ST MICROELECTRONICS SA

Inventor： GARNIER CHRISTOPHE ,  BERNARD PATRICK ,  TCHAGASPANIAN MICHAEL

IPC: H02H9/04 ,  H02H9/02

公开(公告)号：DE69509606T2

公开(公告)日：1999-12-16

申请号：DE69509606

申请日：1995-08-28

Applicant: ST MICROELECTRONICS SA

Inventor： BERNARD PATRICK ,  BELOT DIDIER ,  QUERVEL JACQUES

IPC: H03K17/62 ,  H03K19/0944 ,  H03K19/00

Abstract: The logic circuit includes a first differential stage (Q1,Q2) constructing using bipolar transistors operating in their linear region. These are mounted in one branch of a second differential stage (M5,M6) biased by a current source (M7). The second stage and the current source are constructed using MOS transistors. The MOS transistors of the second stage receive on their grids the same levels of voltage as the bases of the bipolar transistors of the first stage. The current source transistor (M7) has its source connected direction of the supply voltage (GND).

公开(公告)号：DE69509606D1

公开(公告)日：1999-06-17

申请号：DE69509606

申请日：1995-08-28

Applicant: ST MICROELECTRONICS SA

Inventor： BERNARD PATRICK ,  BELOT DIDIER ,  QUERVEL JACQUES

IPC: H03K17/62 ,  H03K19/0944 ,  H03K19/00

Abstract: The logic circuit includes a first differential stage (Q1,Q2) constructing using bipolar transistors operating in their linear region. These are mounted in one branch of a second differential stage (M5,M6) biased by a current source (M7). The second stage and the current source are constructed using MOS transistors. The MOS transistors of the second stage receive on their grids the same levels of voltage as the bases of the bipolar transistors of the first stage. The current source transistor (M7) has its source connected direction of the supply voltage (GND).

公开(公告)号：DE69516627T2

公开(公告)日：2001-01-25

申请号：DE69516627

申请日：1995-10-12

Applicant: ST MICROELECTRONICS SA

Inventor： BERNARD PATRICK ,  BERNARD CHRISTOPHE

IPC: H03G1/00 ,  H03H11/24

公开(公告)号：FR2782581A1

公开(公告)日：2000-02-25

申请号：FR9810476

申请日：1998-08-18

Applicant: ST MICROELECTRONICS SA

Inventor： GARNIER CHRISTOPHE ,  BERNARD PATRICK ,  TCHAGASPANIAN MICHAEL

IPC: H02H9/04 ,  H02H9/02

Abstract: The protective circuit has a diode (D1) between the positive supply (A) and a node (N1) connected to an input/output pin (P1), and a second diode (D2) between the node and a negative or zero potential supply. A transistor (T1), in series between the node and positive supply, has a chain of diodes (1) between its collector and base, triggering conduction if an overvoltage occurs at the pin.