公开(公告)号：JP2008252105A

公开(公告)日：2008-10-16

申请号：JP2008118491

申请日：2008-04-30

Applicant: St Microelectronics Sa ,  エスティマイクロエレクトロニクス エスエー

Inventor： BIANCHI RAUL ANDRES

IPC: H01L29/00 ,  G06F17/50 ,  H01L21/336 ,  H01L21/8234 ,  H01L21/8238 ,  H01L27/088 ,  H01L27/092 ,  H01L29/78

CPC classification number: G06F17/5036

Abstract: PROBLEM TO BE SOLVED: To provide a transistor modeling to make the performance of a finally formed transistor to be close to that of simulated by the simulation model. SOLUTION: In a system for modeling an integrated circuit having at least an insulated gate field effect transistor, this system includes a generation means (MLB) for defining a parameter showing a mechanical stress applied to a transistor active region, and a processing means (MT) for determining at least a plurality of electrical parameter (P) for a transistor by considering the stress parameter. COPYRIGHT: (C)2009,JPO&INPIT

Abstract translation: 要解决的问题：提供晶体管建模以使最终形成的晶体管的性能接近于由仿真模型模拟的晶体管的性能。 解决方案：在用于对至少具有绝缘栅场效应晶体管的集成电路进行建模的系统中，该系统包括用于定义表示施加到晶体管有源区的机械应力的参数的生成装置（MLB），以及处理 用于通过考虑应力参数来确定晶体管的至少多个电参数（P）的装置（MT）。 版权所有（C）2009，JPO＆INPIT

公开(公告)号：JP2003264242A

公开(公告)日：2003-09-19

申请号：JP2003000977

申请日：2003-01-07

Applicant: ST MICROELECTRONICS SA

Inventor： BIANCHI RAUL ANDRES

IPC: H01L29/00 ,  G06F17/50 ,  H01L21/336 ,  H01L21/8234 ,  H01L27/088 ,  H01L29/78

Abstract: PROBLEM TO BE SOLVED: To provide a method for modeling a transistor in which the true performance of a transistor fabricated finally can be approximated to a performance simulated using a simulation model. SOLUTION: A system for modeling an integrated circuit including at least one insulated gate field-effect transistor comprises a generator means (MLB) for defining parameter representating of mechanical stresses applied to the active area of the transistor, and a processing means (MT) for determining at least several electric parameters (P) of the transistor while taking account of the stress parameters. COPYRIGHT: (C)2003,JPO

公开(公告)号：FR2991811A1

公开(公告)日：2013-12-13

申请号：FR1255433

申请日：2012-06-11

Applicant: ST MICROELECTRONICS CROLLES 2 ,  ST MICROELECTRONICS SA

Inventor： BIANCHI RAUL ANDRES ,  FONTENEAU PASCAL

IPC: H01L29/866

Abstract: L'invention concerne une diode à avalanche comprenant, entre deux régions fortement dopées de types de conductivité opposés (5, 6) disposées à la surface d'une région semiconductrice , une région faiblement dopée (7), la longueur L de la région faiblement dopée entre les régions fortement dopées étant de l'ordre de 50 à 200 nm.