公开(公告)号：DE602004005806D1

公开(公告)日：2007-05-24

申请号：DE602004005806

申请日：2004-12-08

Applicant: ST MICROELECTRONICS SA

Inventor： ZINK SEBASTIEN ,  CAVALIERI PAOLA ,  LECONTE BRUNO ,  DEVIN JEAN ,  MAUGAIN FRANCOIS

IPC: G06F12/06 ,  G06F3/06 ,  G11C7/10 ,  G11C8/04 ,  G11C8/12

Abstract: The method involves providing a ready/busy pad contact (RBP) in each sequential access memory. A contact management circuit (RBCT) and a central unit are provided in each memory to force the contact to a predetermined electrical potential. Execution of read or write command for integrated plane memory (MA) in each sequential memory is prevented when the contact presents the predetermined potential. An independent claim is also included for a sequential access memory comprising a serial input/output and an integrated plane memory.

公开(公告)号：DE602004006700D1

公开(公告)日：2007-07-12

申请号：DE602004006700

申请日：2004-12-08

Applicant: ST MICROELECTRONICS SA

Inventor： ZINK SEBASTIEN ,  CAVALIERI PAOLA ,  LECONTE BRUNO

IPC: G11C8/04 ,  G06F3/06 ,  G06F12/06 ,  G11C7/10 ,  G11C8/12

Abstract: The method involves providing a ready/busy pad contact (RBP) in each sequential access memory. A contact management circuit (RBCT) and a central unit are provided in each memory to force the contact to a predetermined electrical potential. Execution of read or write command for integrated plane memory (MA) in each sequential memory is prevented when the contact presents the predetermined potential. An independent claim is also included for a sequential access memory comprising a serial input/output and an integrated plane memory.

公开(公告)号：DE602004005806T2

公开(公告)日：2008-01-10

申请号：DE602004005806

申请日：2004-12-08

Applicant: ST MICROELECTRONICS SA

Inventor： ZINK SEBASTIEN ,  CAVALIERI PAOLA ,  LECONTE BRUNO ,  DEVIN JEAN ,  MAUGAIN FRANCOIS

IPC: G06F12/06 ,  G06F3/06 ,  G11C7/10 ,  G11C8/04 ,  G11C8/12

Abstract: The method involves providing a ready/busy pad contact (RBP) in each sequential access memory. A contact management circuit (RBCT) and a central unit are provided in each memory to force the contact to a predetermined electrical potential. Execution of read or write command for integrated plane memory (MA) in each sequential memory is prevented when the contact presents the predetermined potential. An independent claim is also included for a sequential access memory comprising a serial input/output and an integrated plane memory.