公开(公告)号：FR2789803B1

公开(公告)日：2002-03-08

申请号：FR9901741

申请日：1999-02-12

Applicant: ST MICROELECTRONICS SA

Inventor： FROMENT BENOIT ,  GAYET PHILIPPE ,  VAN DER VEGT ERIK

IPC: H01L21/28 ,  H01L21/3205 ,  H01L21/768 ,  H01L23/52 ,  H01L23/522 ,  H01L23/532

Abstract: At least one layer of a dielectric material 3 is deposited on a copper track 1 covered with an encapsulation layer 2. A cavity 6 is etched in the layer of dielectric material at the location of the future vertical connection. At least one protective layer is deposited in said cavity to preclude diffusion of copper 7. The protective layer 7 at the bottom of the cavity 6 is subjected to an anisotropic etching treatment and also the encapsulation layer 2 is subjected to etching, whereafter the cavity is filled with copper. The copper particles pulverized during etching the encapsulation layer do not contaminate the dielectric material 3.

公开(公告)号：DE60045501D1

公开(公告)日：2011-02-24

申请号：DE60045501

申请日：2000-02-04

Applicant: NXP BV ,  ST MICROELECTRONICS SA

Inventor： FROMENT BENOIT ,  GAYET PHILLIPE ,  VAN DER VEGT ERIK

IPC: H01L21/28 ,  H01L21/768 ,  H01L21/285 ,  H01L21/3205 ,  H01L23/52 ,  H01L23/522 ,  H01L23/532

公开(公告)号：FR2789803A1

公开(公告)日：2000-08-18

申请号：FR9901741

申请日：1999-02-12

Applicant: ST MICROELECTRONICS SA

Inventor： FROMENT BENOIT ,  GAYET PHILIPPE ,  VAN DER VEGT ERIK

IPC: H01L21/28 ,  H01L21/3205 ,  H01L21/768 ,  H01L23/52 ,  H01L23/522 ,  H01L23/532

Abstract: At least one layer of a dielectric material (3) is deposited on a copper track (1) covered with an encapsulation layer (2). A cavity (6) is etched in the layer of dielectric material at the location of the future vertical connection. At least one protective layer (7) is deposited in said cavity to preclude diffusion of copper. The protective layer (7) at the bottom of the cavity (6) is subjected to an anisotropic etching treatment and also the encapsulation layer (2) is subjected to etching, whereafter the cavity is filled with copper. The copper particles pulverized during etching of the encapsulation layer do not contaminate the dielectric material.