3.
    发明专利
    未知

    公开(公告)号:DE60023464D1

    公开(公告)日:2005-12-01

    申请号:DE60023464

    申请日:2000-06-05

    Abstract: The microreactor is completely integrated and is formed by a semiconductor body (2) having a surface (4) and housing at least one buried channel (3) accessible from the surface of the semiconductor body (2) through two trenches (21a, 21b). A heating element (10) extends above the surface (4) over the channel (3) and a resist region (18) extends above the heating element and defines an inlet reservoir and an outlet reservoir (19, 20). The reservoirs (19, 20) are connected to the trenches (21a, 21b) and have, in cross-section, a larger area than the trenches. The outlet reservoir (20) has a larger area than the inlet reservoir (19). A sensing electrode (12) extends above the surface (4) and inside the outlet reservoir (20).

    5.
    发明专利
    未知

    公开(公告)号:DE60023464T2

    公开(公告)日:2006-07-20

    申请号:DE60023464

    申请日:2000-06-05

    Abstract: The microreactor is completely integrated and is formed by a semiconductor body (2) having a surface (4) and housing at least one buried channel (3) accessible from the surface of the semiconductor body (2) through two trenches (21a, 21b). A heating element (10) extends above the surface (4) over the channel (3) and a resist region (18) extends above the heating element and defines an inlet reservoir and an outlet reservoir (19, 20). The reservoirs (19, 20) are connected to the trenches (21a, 21b) and have, in cross-section, a larger area than the trenches. The outlet reservoir (20) has a larger area than the inlet reservoir (19). A sensing electrode (12) extends above the surface (4) and inside the outlet reservoir (20).

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