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公开(公告)号:JP2002261108A
公开(公告)日:2002-09-13
申请号:JP2001401896
申请日:2001-12-28
Applicant: ST MICROELECTRONICS SRL
Inventor: MAGNI PIERANGELO , CIGADA ANDREA
Abstract: PROBLEM TO BE SOLVED: To provide a protective package for an electronic device where yield is improved without damaging an electronic device stored therein. SOLUTION: A method for forming the protective package comprises a step of using a mold 10, the mold comprising a half mold 15 that has a lug directing toward the inside of the mold, the lug being capable of elastic deformation and comprising one end having an element 17 that comes into contact with at least a part of an electronic circuit 13 by pressurizing contact, and a step of injecting resin into the mold so that the protective package has a hole part aligned with at least the part of the electronic circuit.
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公开(公告)号:ITMI992116A1
公开(公告)日:2001-04-11
申请号:ITMI992116
申请日:1999-10-11
Applicant: ST MICROELECTRONICS SRL , STMICROELECTRONICS SDN BHD
Inventor: CHUANG PHUI PHOONG , CIGADA ANDREA
IPC: B21D20060101 , B65B61/04 , H01L23/28 , H03K19/21
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公开(公告)号:ITMI992116D0
公开(公告)日:1999-10-11
申请号:ITMI992116
申请日:1999-10-11
Applicant: ST MICROELECTRONICS SRL , STMICROELECTRONICS SDN BHD
Inventor: CHUANG PHUI PHOONG , CIGADA ANDREA
IPC: B21D20060101 , B65B61/04 , H01L23/28 , H03K19/21
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公开(公告)号:IT1317559B1
公开(公告)日:2003-07-09
申请号:ITMI20001145
申请日:2000-05-23
Applicant: ST MICROELECTRONICS SRL
Inventor: TIZIANI ROBERTO , COGNETTI CARLO , CIGADA ANDREA
IPC: H01L23/495
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公开(公告)号:ITMI20001145A1
公开(公告)日:2001-11-23
申请号:ITMI20001145
申请日:2000-05-23
Applicant: ST MICROELECTRONICS SRL
Inventor: COGNETTI CARLO , CIGADA ANDREA , TIZIANI ROBERTO
IPC: H01L23/495
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公开(公告)号:ITTO20000739D0
公开(公告)日:2000-07-26
申请号:ITTO20000739
申请日:2000-07-26
Inventor: CIGADA ANDREA , SHECHTER PIERRE YVES , KRITHIVASAN SIVAKUMA
IPC: B08B7/00
Abstract: A process for cleaning an integrated circuit package surface, comprising the steps of introducing the integrated circuit inside a plasma chamber; and of exposing the integrated circuit to a physical plasma obtained starting from a gas consisting of pure argon or any other noble gas having, in the plasma state, the behavior of a halogen, for example helium. The argon pla sma is obtained using the following energization parameters: energization time, 12-13 seconds; energization power, 140-160 W; plasma chamber pressure, 190-210 millitorr; and energization frequency, between 1 kHz and 100 GHz.
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公开(公告)号:IT1314040B1
公开(公告)日:2002-12-03
申请号:ITMI992116
申请日:1999-10-11
Applicant: ST MICROELECTRONICS SRL , STMICROELECTRONICS SDN BHD
Inventor: CHUANG PHUI PHOONG , CIGADA ANDREA
IPC: B21D20060101 , B65B61/04 , H01L23/28 , H03K19/21
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公开(公告)号:ITTO20000596A1
公开(公告)日:2001-12-21
申请号:ITTO20000596
申请日:2000-06-20
Applicant: ST MICROELECTRONICS SRL
Inventor: CIGADA ANDREA , KRITHIVASAN SIVAKUMA , SHECHTER PIERRE YVES
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公开(公告)号:ITTO20000596D0
公开(公告)日:2000-06-20
申请号:ITTO20000596
申请日:2000-06-20
Applicant: ST MICROELECTRONICS SRL
Inventor: CIGADA ANDREA , SHECHTER PIERRE YVES , KRITHIVASAN SIVAKUMA
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公开(公告)号:ITTO20000499D0
公开(公告)日:2000-05-30
申请号:ITTO20000499
申请日:2000-05-30
Inventor: CIGADA ANDREA , SHECHTER PIERRE YVES , KRITHIVASAN SIVAKUMA
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