公开(公告)号：JP2000164841A

公开(公告)日：2000-06-16

申请号：JP28993099

申请日：1999-10-12

Applicant: ST MICROELECTRONICS SRL

Inventor： POLMAN ALBERT ,  HAMELIN NICHOLAS ,  KIK PETER ,  COFFA SALVATORE ,  FRISINA FERRUCCIO ,  SAGGIO MARIO

IPC: H01L31/108 ,  G01J1/02 ,  G02B6/12 ,  H01L27/14 ,  H01L31/0352 ,  H01L31/103

Abstract: PROBLEM TO BE SOLVED: To obtain an infrared detector device, exhibiting a high efficiency of transfer from infrared radiation to electrical currents by a semiconductor material. SOLUTION: An infrared detector device 1 is provided with P-N junctions 9 and 10, comprised of a first semiconductor material region 9 doped with rare-earth ions and a second semiconductor material region 10 of the oppositely doped type P. The detector device extends on a substrate 2, including a reflection layer 4 and is provided with a wave guide path 8 formed by protrusions whose range in horizontal direction is demarcated by an oxide a region for protection and containment. At least a part of the wave guide path 8 is formed of a P-N junction and has an end to which light to be detected is supplied. The detector device has electrodes 18 and 13, placed on the side and top of the wave guide path 8 and enables efficient collection of charge carriers produced by optical transfer.