公开(公告)号：JP2001291839A

公开(公告)日：2001-10-19

申请号：JP2001054817

申请日：2001-02-28

Applicant: ST MICROELECTRONICS SRL

Inventor： ERRATICO PIETRO ,  SACCHI ENRICO ,  VILLA FLAVIO ,  BARLOCCHI GABRIELE ,  CORONA PIETRO

IPC: H01L21/822 ,  B81C1/00 ,  G01N37/00 ,  H01L21/306 ,  H01L21/308 ,  H01L21/314 ,  H01L21/316 ,  H01L27/04

Abstract: PROBLEM TO BE SOLVED: To solve the problem that, in forming an embedding cavity within a semiconductor material main body in the prior art, a special mask needed complicates the processes, or increases the cost, or further increas the area where the cavity occupies on silicon. SOLUTION: This process comprises the steps of: forming, on a top part of a semiconductor material wafer, a perforated mask which contains a plurality of openings each having a substantially square shape and a side face having an inclination of 45 deg. with respect to the flat part of the semiconductor material wafer, and has a lattice structure, using the perforated mask to perform anisotropic etching on the semiconductor material wafer in TMAH, thereby forming a cavity having a section of a reverse isosceles trapezoid, and using TEOS to perform a chemical vapor phase growth, thereby forming a TEOS layer which can completely airtightly close the opening of the perforated mask, can define a film coating on the cavity, and can form later a suspended integration structure.