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    PROCESS FOR FORMING EMBEDDING CAVITY WITHIN SEMICONDUCTOR MATERIAL WAFER AND EMBEDDING CAVITY
    1.
    发明专利
    PROCESS FOR FORMING EMBEDDING CAVITY WITHIN SEMICONDUCTOR MATERIAL WAFER AND EMBEDDING CAVITY 失效

    公开(公告)号：JP2001291839A

    公开(公告)日：2001-10-19

    申请号：JP2001054817

    申请日：2001-02-28

    Applicant: ST MICROELECTRONICS SRL

    Inventor： ERRATICO PIETRO ,  SACCHI ENRICO ,  VILLA FLAVIO ,  BARLOCCHI GABRIELE ,  CORONA PIETRO

    IPC: H01L21/822 ,  B81C1/00 ,  G01N37/00 ,  H01L21/306 ,  H01L21/308 ,  H01L21/314 ,  H01L21/316 ,  H01L27/04

    Abstract: PROBLEM TO BE SOLVED: To solve the problem that, in forming an embedding cavity within a semiconductor material main body in the prior art, a special mask needed complicates the processes, or increases the cost, or further increas the area where the cavity occupies on silicon. SOLUTION: This process comprises the steps of: forming, on a top part of a semiconductor material wafer, a perforated mask which contains a plurality of openings each having a substantially square shape and a side face having an inclination of 45 deg. with respect to the flat part of the semiconductor material wafer, and has a lattice structure, using the perforated mask to perform anisotropic etching on the semiconductor material wafer in TMAH, thereby forming a cavity having a section of a reverse isosceles trapezoid, and using TEOS to perform a chemical vapor phase growth, thereby forming a TEOS layer which can completely airtightly close the opening of the perforated mask, can define a film coating on the cavity, and can form later a suspended integration structure.

    METHOD FOR MANUFACTURE OF ELECTROMAGNETIC RADIATION REFLECTING DEVICE
    2.
    发明专利
    METHOD FOR MANUFACTURE OF ELECTROMAGNETIC RADIATION REFLECTING DEVICE 审中-公开

    公开(公告)号：JP2003207612A

    公开(公告)日：2003-07-25

    申请号：JP2002328479

    申请日：2002-11-12

    Applicant: ST MICROELECTRONICS SRL

    Inventor： MASTROMATTEO UBALDO ,  CORONA PIETRO ,  VILLA FLAVIO ,  BARLOCCHI GABRIELE

    IPC: G02B1/02 ,  G02B5/08 ,  G02B6/36 ,  G02B6/42 ,  G11B7/12 ,  G11B7/135

    Abstract: PROBLEM TO BE SOLVED: To provide a method for manufacturing reflecting devices for photonics application which has high reflection quality. SOLUTION: The method for manufacturing the electromagnetic radiation reflecting devices (23) comprises the steps of: (a) providing a silicon substrate (1) defined by at least one first free surface (2), (b) forming on the first surface a layer of protective material provided with an opening which exposes a region of the first free surface (2), (c) etching the region of the free surface (2) by means of an anisotropic agent to remove at least one portion of the substrate and defining a second free surface (16) of the substrate inclined in relation to the first surface. Furthermore, the first free surface (2) is parallel to the crystalline planes ä110} of silicon substrate and the step (c) comprises a progressing step of the anisotropic agent so that the second free surface (16) resulting from the etching step is parallel to the planes ä100} of the substrate (1). COPYRIGHT: (C)2003,JPO

    MANUFACTURE OF SOI WAFER WITH NON-POINTED EMBEDDED OXIDE FILM REGION
    3.
    发明专利
    MANUFACTURE OF SOI WAFER WITH NON-POINTED EMBEDDED OXIDE FILM REGION 失效

    公开(公告)号：JP2000340775A

    公开(公告)日：2000-12-08

    申请号：JP2000127858

    申请日：2000-04-27

    Applicant: ST MICROELECTRONICS SRL

    Inventor： VILLA FLAVIO ,  BARLOCCHI GABRIELE ,  CORONA PIETRO

    IPC: H01L21/316 ,  H01L21/32 ,  H01L21/762 ,  H01L27/12

    Abstract: PROBLEM TO BE SOLVED: To optimumly form an embedded oxide film region. SOLUTION: This manufacturing method includes a step of forming a plurality of protruding regions 48 and a trench 45, extending between the protruding regions in a wafer 1, a step for implanting mask regions 55 and 56 with nitrogen ions and the tip of the protruding parts 48, and a step of forming a delay region 57 on the bottom of the trench 45. Nitrogen of the delay region is implanted at a dose lower than a mask region. Thermal oxidization is performed, in such a manner that it starts at the bottom part of the protruding region 48 and progresses downward. The continuous region of an embedded oxide film is formed, and a non-oxidized film region, where a nucleus region is formed for continuous epitaxial growth, is formed on the continuous region corresponding to the tip of the protruding region. The mask regions 55 and 56 and the delay region 57 are formed via two continuous implantations including an oblique implantation.

    6.
    发明专利
    未知

    公开(公告)号：DE69935495T2

    公开(公告)日：2007-11-29

    申请号：DE69935495

    申请日：1999-04-29

    Applicant: ST MICROELECTRONICS SRL

    Inventor： BARLOCCHI GABRIELE ,  VILLA FLAVIO ,  CORONA PIETRO

    IPC: H01L21/764 ,  B01L3/00 ,  B81C1/00 ,  H01L21/20

    Abstract: The process comprises the steps of forming, on a monocrystalline-silicon body (11), an etching-aid region (13) of polycrystalline silicon; forming, on the etching-aid region (13), a nucleus region (17) of polycrystalline silicon, surrounded by a protective structure (26) having an opening (22') extending as far as the etching-aid region (13); TMAH-etching the etching-aid region (13) and the monocrystalline body (11), forming a tub shaped cavity (30); removing the top layer (19) of the protective structure (26); and growing an epitaxial layer (33) on the monocrystalline body (11) and the nucleus region (17). The epitaxial layer, of monocrystalline type (33a) on the monocrystalline body (11) and of polycrystalline type (33b) on the nucleus region (17), closes upwardly the etching opening (22'), and the cavity (30) is thus completely embedded in the resulting wafer (34).

    9.
    发明专利
    未知

    公开(公告)号：DE602005007235D1

    公开(公告)日：2008-07-10

    申请号：DE602005007235

    申请日：2005-09-28

    Applicant: ST MICROELECTRONICS SRL

    Inventor： CORONA PIETRO ,  VILLA FLAVIO FRANCESCO ,  BARLOCCHI GABRIELE

    IPC: B81B3/00

    Abstract: A process for manufacturing a suspended structure (20) of semiconductor material envisages the steps of: providing a monolithic body (10) of semiconductor material having a front face (10a); forming a buried cavity (17) within the monolithic body (10), extending at a distance from the front face (10a) and delimiting, with the front face (10a), a surface region (18) of the monolithic body (10), said surface region (18) having a first thickness (w 1 ); carrying out a thickening thermal treatment such as to cause a migration of semiconductor material of the monolithic body (10) towards the surface region (18) and thus form a suspended structure (20) above the buried cavity (17), the suspended structure (20) having a second thickness (w 2 ) greater than the first thickness (w 1 ). The thickening thermal treatment is an annealing treatment.

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