METHOD AND CIRCUIT FOR GENERATING ANALYSIS SIGNAL WHEN CURRENT FLOWING THROUGH POWER TRANSISTOR REACHES LEVEL CLOSETO LIMIT CURRENT

    公开(公告)号:JPH07260838A

    公开(公告)日:1995-10-13

    申请号:JP31904394

    申请日:1994-11-29

    Abstract: PURPOSE: To generate a diagnostic signal indicating reach of current flowing through a power transistor in a presetting level by driving the first circuit, in which maximum current is restricted by a single signal serving as a function of the voltage difference, and a threshold circuit generating the diagnostic signal. CONSTITUTION: A comparator is constructed of a differential amplifier A which can generate a signal as a function of the difference between a reverence voltage E1 and a voltage in a sensing resistor RS, through which current IC flowing in a power transistor T1 (and a load L) flows. The signal generated by the comparator A drives two circuits. The first circuit (LIMITATOR) generates a restriction signal for the maximum current flowing in the transistor T1 and works on a driving circuit (DRIVE) transmitting driving current to the transistor T1 . The second circuit (DIAGNOSTIC) is set by the first circuit and generates a diagnostic signal VD, after the current IC reaches a value smaller than the limit value for the current IC by the previously set value.

    2.
    发明专利
    未知

    公开(公告)号:DE69316627D1

    公开(公告)日:1998-02-26

    申请号:DE69316627

    申请日:1993-11-29

    Abstract: A diagnostic signal, indicative of the reaching of a predefined level, lower than a fixed maximum limit value, by the current flowing through a power transistor, is generated while employing a single comparator of a reference voltage with the voltage present across a sensing resistance, thus preventing problems arising from different offset characteristics of distinct comparators. By the use of current mirrors, the generation of a diagnostic signal when the current reaches a level that can be fixed very close to the limiting value, may be reliably triggered, irrespectively of the offset characteristic of the single comparator employed.

    3.
    发明专利
    未知

    公开(公告)号:DE69533391D1

    公开(公告)日:2004-09-23

    申请号:DE69533391

    申请日:1995-04-28

    Abstract: The invention relates to a circuit for detecting an overvoltage in an electrical load (Z1) inserted with a first and a second terminal between a feed line (AL) and a control switch (S), the circuit having an output voltage (Vout) at an output terminal (OUT) and comprising: at least one first threshold comparator (C1) having a first input terminal held at a first reference voltage (E1), a second input terminal connected to the feed line (AL) and an output terminal, at least one second threshold comparator (C2) having a first input terminal held at a second reference voltage (E2), a second input terminal connected to a second terminal of the electrical load (Z1), and an output terminal, at least one output transistor (T1) inserted with a first and a second terminal between the feed line (AL) and an output terminal (OUT) of the circuit (1), the transistor (T1) being controlled by at least one logic block (D) having inputs connected to the outputs of the threshold comparators (C1) and (C2), at least one feedback block (R) inserted with an input terminal and an output terminal respectively between the output terminal (OUT) of circuit (1) and a further input terminal to the logic block (D).

    4.
    发明专利
    未知

    公开(公告)号:DE69316627T2

    公开(公告)日:1998-05-07

    申请号:DE69316627

    申请日:1993-11-29

    Abstract: A diagnostic signal, indicative of the reaching of a predefined level, lower than a fixed maximum limit value, by the current flowing through a power transistor, is generated while employing a single comparator of a reference voltage with the voltage present across a sensing resistance, thus preventing problems arising from different offset characteristics of distinct comparators. By the use of current mirrors, the generation of a diagnostic signal when the current reaches a level that can be fixed very close to the limiting value, may be reliably triggered, irrespectively of the offset characteristic of the single comparator employed.

    6.
    发明专利
    未知

    公开(公告)号:DE69214010T2

    公开(公告)日:1997-04-03

    申请号:DE69214010

    申请日:1992-05-15

    Abstract: The driving circuit comprises a detection resistance (R1) interposed between the emitter of the power transistor (T1) and ground, a first circuit part (G1, T4, T5, R2) suitable for generating a first current (I2) being a function of the voltage across said detection resistance (R1) and a second circuit part (TD2, T3, TD1, T2) suitable for generating a driving base current (Ib) of the power transistor (T1) that is proportional to said first current (I2).

    7.
    发明专利
    未知

    公开(公告)号:DE69609053D1

    公开(公告)日:2000-08-03

    申请号:DE69609053

    申请日:1996-05-14

    Abstract: An integrated semiconductor structure (500) comprises two homologous P-type regions (120 and 130) formed within an N-type epitaxial layer (110). A P-type region (510) formed in the portion of the epitaxial layer (110) disposed between the two P-type regions (120 and 130) includes within it an N-type region (520); this N region (520) is electrically connected to the P region (130) by means of a surface metal contact (530). The structure reduces the injection of current between the P region 120 and the P region 130, at the same time preventing any vertical parasitic transistors from being switched on.

    10.
    发明专利
    未知

    公开(公告)号:IT1248607B

    公开(公告)日:1995-01-19

    申请号:ITMI911390

    申请日:1991-05-21

    Abstract: The driving circuit comprises a detection resistance (R1) interposed between the emitter of the power transistor (T1) and ground, a first circuit part (G1, T4, T5, R2) suitable for generating a first current (I2) being a function of the voltage across said detection resistance (R1) and a second circuit part (TD2, T3, TD1, T2) suitable for generating a driving base current (Ib) of the power transistor (T1) that is proportional to said first current (I2).

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