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    Quantum dot laser
    2.
    发明专利
    Quantum dot laser 审中-公开
    量子激光器

    公开(公告)号：JP2007318165A

    公开(公告)日：2007-12-06

    申请号：JP2007187696

    申请日：2007-07-18

    Applicant: Stc Unm ,  エスティーシー. ユーエヌエムStc.Unm

    Inventor： STINTZ ANDREAS ,  VARANGIS PETROS N ,  MALLOY KEVIN J ,  LESTER LUKE F ,  NEWELL TIMOTHY C ,  LI HUA

    IPC: H01S5/343 ,  H01S5/12 ,  H01S5/125 ,  H01S5/14 ,  H01S5/183 ,  H01S5/22 ,  H01S5/34 ,  H01S5/40

    CPC classification number: B82Y30/00 ,  B82Y10/00 ,  B82Y20/00 ,  H01S5/1228 ,  H01S5/143 ,  H01S5/3412 ,  H01S5/4031 ,  H01S5/4043 ,  H01S5/4087

    Abstract: PROBLEM TO BE SOLVED: To provide a technology for forming self-assembled quantum dots having desirable optical characteristics. SOLUTION: The quantum dots are self-assembled InAs quantum dots 406 formed in InGaAs quantum wells 404 that are grown on a GaAs substrate by molecular beam epitaxy. A first AlGaAs or GaAs barrier layer 402 is grown. A first InGaAs well layer 404 is grown on the first barrier layer. A sufficient monolayer thickness of InAs is grown on the InGaAs, to form self-assembled islands. A second InGaAs well layer 404 is grown over the InAs islands to embed the quantum dots. A second AlGaAs or GaAs barrier layer 402 is then grown to complete the quantum well. Optical gain characteristics of the quantum well layers are influenced by the compositional uniformity of surrounding layers, the dot size distribution, the dot density, and the number of layers of the dots that can be placed in an active region without exceeding a critical thickness for forming dislocation. COPYRIGHT: (C)2008,JPO&INPIT

    Abstract translation: 要解决的问题：提供一种用于形成具有期望光学特性的自组装量子点的技术。 解决方案：量子点是通过分子束外延在GaAs衬底上生长的InGaAs量子阱404中形成的自组装InAs量子点406。 生长第一AlGaAs或GaAs阻挡层402。 在第一阻挡层上生长第一InGaAs阱层404。 在InGaAs上生长足够的单层厚度的InAs，以形成自组装岛。 在InAs岛上生长第二InGaAs阱层404以嵌入量子点。 然后生长第二AlGaAs或GaAs阻挡层402以完成量子阱。 量子阱层的光学增益特性受周围层的组成均匀性，点尺寸分布，点密度和可放置在有源区中的点的层数而不超过形成的临界厚度的影响 错位。 版权所有（C）2008，JPO＆INPIT

    QUANTUM DOT LASERS
    6.
    发明申请
    QUANTUM DOT LASERS 审中-公开
    量子点激光

    公开(公告)号：WO02058200A9

    公开(公告)日：2003-05-30

    申请号：PCT/US0131256

    申请日：2001-10-05

    Applicant: STC UNM

    Inventor： STINTZ ANDREAS ,  VARANGIS PETROS N ,  MALLOY KEVIN J ,  LESTER LUKE F ,  NEWELL TIMOTHY C ,  LI HUA

    IPC: H01S5/343 ,  H01S5/12 ,  H01S5/125 ,  H01S5/14 ,  H01S5/183 ,  H01S5/22 ,  H01S5/34 ,  H01S5/40 ,  H01S5/00

    CPC classification number: B82Y30/00 ,  B82Y10/00 ,  B82Y20/00 ,  H01S5/1228 ,  H01S5/143 ,  H01S5/3412 ,  H01S5/4031 ,  H01S5/4043 ,  H01S5/4087

    Abstract: A quantum dot active region is disclosed in which quantum dot layers are formed using a self-assembled growth technique. In one embodiment, growth parameters are selected to control the dot density and dot size distribution to achieve desired optical gain spectrum characteristics. In one embodiment, the distribution in dot size and the sequence of optical transition energy values associated with the quantum confined states of the dots are selected to facilitate forming a continuous optical gain spectrum over an extended wavelength range. In another embodiment, the optical gain is selected to increase the saturated ground state gain for wavelengths of 1260 nanometers and greater. In other embodiments, the quantum dots are used as the active region in laser devices, including tunable lasers and monolithic multi-wavelength laser arrays.

    Abstract translation: 公开了量子点活性区域，其中量子点层使用自组装生长技术形成。 在一个实施例中，选择生长参数以控制点密度和点尺寸分布以实现期望的光学增益谱特性。 在一个实施例中，选择点尺寸分布和与点的量子限制状态相关联的光学跃迁能量值的顺序以有助于在扩展的波长范围上形成连续的光增益谱。 在另一个实施例中，选择光增益以增加1260纳米和更大波长的饱和基态增益。 在其他实施例中，量子点被用作激光器件中的有源区域，包括可调谐激光器和单片多波长激光器阵列。

    QUANTUM DASH DEVICES
    7.
    发明专利
    QUANTUM DASH DEVICES 未知

    公开(公告)号：CA2424468A1

    公开(公告)日：2002-03-28

    申请号：CA2424468

    申请日：2001-09-21

    Applicant: STC UNM

    Inventor： LI HUA ,  NEWELL TIMOTHY C ,  VARANGIS PETROS N ,  STINTZ ANDREAS ,  LESTER LUKE F ,  MALLOY KEVIN J

    IPC: H01L29/06 ,  H01S5/12 ,  H01S5/14 ,  H01S5/183 ,  H01S5/34 ,  H01S5/343 ,  H01S5/40 ,  H01L33/00

    Abstract: Quantum dot active region structures are disclosed. In a preferred embodimen t, the distribution in dot size and the sequence of optical transition energy values associated with the quantum confined states of the dots are selected to facilitate forming a continuous optical gain spectrum over an extended wavelength range. In one embodiment, the quantum dots are self-assembled quantum dots with a length-to-width ratio of at least three along the growth plane. In one embodiment, the quantum dots are formed in quantum wells for improved carrier confinement. In other embodiments, the quantum dots are use d as the active region in laser devices, including tunable lasers and monolith ic multi-wavelength laser arrays.

    QUANTUM DASH DEVICES
    8.
    发明专利
    QUANTUM DASH DEVICES 未知

    公开(公告)号：CA2424468C

    公开(公告)日：2008-04-01

    申请号：CA2424468

    申请日：2001-09-21

    Applicant: STC UNM

    Inventor： NEWELL TIMOTHY C ,  STINTZ ANDREAS ,  LI HUA ,  MALLOY KEVIN J ,  LESTER LUKE F ,  VARANGIS PETROS N

    IPC: H01L29/06 ,  H01S5/34 ,  H01L33/00 ,  H01S5/12 ,  H01S5/14 ,  H01S5/183 ,  H01S5/343 ,  H01S5/40

    Abstract: Quantum dot active region structures are disclosed. In a preferred embodiment, the distribution in dot size and the sequence of optical transition energy values associated with the quantum confined states of the dots are selected to facilitate forming a continuous optical gain spectrum over an extended wavelength range. In one embodiment, the quantum dots are self-assembled quantum dots with a length-to-width ratio of at least three along the growth plane. In one embodiment, the quantum dots are formed in quantum wells for improved carrier confinement. In other embodiments, the quantum dots are used as the active region in laser devices, including tunable lasers and monolithic multi-wavelength laser arrays.

    QUANTUM DOT LASERS
    9.
    发明专利
    QUANTUM DOT LASERS 未知

    公开(公告)号：CA2423782A1

    公开(公告)日：2002-07-25

    申请号：CA2423782

    申请日：2001-10-05

    Applicant: STC UNM

    Inventor： VARANGIS PETROS N ,  LI HUA ,  NEWELL TIMOTHY C ,  LESTER LUKE F ,  MALLOY KEVIN J ,  STINTZ ANDREAS

    IPC: H01S5/343 ,  H01S5/12 ,  H01S5/125 ,  H01S5/14 ,  H01S5/183 ,  H01S5/22 ,  H01S5/34 ,  H01S5/40 ,  H01S5/00

    Abstract: A quantum dot active region is disclosed in which quantum dot layers are formed using a self-assembled growth technique. In one embodiment, growth parameters are selected to control the dot density and dot size distribution to achieve desired optical gain spectrum characteristics. In one embodiment, the distribution in dot size and the sequence of optical transition energy values associated with the quantum confined states of the dots are selected to facilitate forming a continuous optical gain spectrum over an extended wavelength range. In another embodiment, the optical gain is selected to increase the saturated ground state gain for wavelengths of 1260 nanometers and greater. In other embodiments, the quantum dots are used as the active region in laser devices, including tunable lasers and monolithic multi- wavelength laser arrays.

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