公开(公告)号：EP1676343A4

公开(公告)日：2008-02-06

申请号：EP04796304

申请日：2004-10-22

Applicant: STC UNM ,  INNOLUME ACQUISITION INC

Inventor： GRAY ALLEN L ,  STINTZ ANDREAS ,  MALLOY KEVIN J ,  LESTER LUKE F ,  VARANGIS PETROS M

IPC: H01L29/06 ,  H01L21/00 ,  H01L21/20 ,  H01L29/24 ,  H01S20060101 ,  H01S5/00 ,  H01S5/22 ,  H01S5/34 ,  H01S5/343

CPC classification number: B82Y10/00 ,  B82Y20/00 ,  H01L21/02392 ,  H01L21/02433 ,  H01L21/02463 ,  H01L21/02505 ,  H01L21/02513 ,  H01L21/02546 ,  H01S5/2201 ,  H01S5/3412 ,  H01S5/34366 ,  H01S2304/02

Abstract: Symmetric quantum dots (320) are embedded in quantum wells (330). The symmetry is achieved by using slightly off-axis substrates (302) and/or overpressure during the quantum dot growth. The quantum dot structure can be used in a variety of applications, including semiconductor lasers.

公开(公告)号：WO2007040600A3

公开(公告)日：2008-01-10

申请号：PCT/US2006009894

申请日：2006-03-15

Applicant: INNOLUME ACQUISITION INC ,  GRAY ALLEN L ,  HUANG HUA ,  LI HUA ,  VARANGIS PETROS M ,  ZHANG LEI ,  ZILKO JOHN L

Inventor： GRAY ALLEN L ,  HUANG HUA ,  LI HUA ,  VARANGIS PETROS M ,  ZHANG LEI ,  ZILKO JOHN L

IPC: H01S3/098

CPC classification number: H01S5/065 ,  B82Y20/00 ,  H01S5/0602 ,  H01S5/0657 ,  H01S5/10 ,  H01S5/1014 ,  H01S5/1064 ,  H01S5/22 ,  H01S5/34 ,  H01S5/3412

Abstract: A mode-locked integrated semiconductor laser has a gain section and an absorption section that are based on quantum-confined active regions. The optical mode(s) in each section can be modeled as occupying a certain cross-sectional area, referred to as the mode cross-section. The mode cross-section in the absorber section is larger in area than the mode cross-section in the gain section, thus reducing the optical power density in the absorber section relative to the gain section. This, in turn, delays saturation of the absorber section until higher optical powers, thus increasing the peak power output of the laser.

Abstract translation: 锁模集成半导体激光器具有基于量子限制有源区域的增益部分和吸收部分。 每个部分中的光学模式可以被建模为占据一定的横截面积，称为模式横截面。 吸收体部的模式截面的面积大于增益部的模式截面，因此相对于增益部降低吸收部的光功率密度。 这反过来延迟了吸收器部分的饱和，直到更高的光功率，从而增加了激光器的峰值功率输出。

公开(公告)号：WO2005041366A2

公开(公告)日：2005-05-06

申请号：PCT/US2004035293

申请日：2004-10-22

Applicant: STC UNM ,  GRAY ALLEN L ,  STINTZ ANDREAS ,  MALLOY KEVIN J ,  LESTER LUKE F ,  VARANGIS PETROS M

Inventor： GRAY ALLEN L ,  STINTZ ANDREAS ,  MALLOY KEVIN J ,  LESTER LUKE F ,  VARANGIS PETROS M

IPC: H01L21/20 ,  H01L29/06 ,  H01S20060101 ,  H01S5/22 ,  H01S5/34 ,  H01S5/343 ,  H01S

CPC classification number: B82Y10/00 ,  B82Y20/00 ,  H01L21/02392 ,  H01L21/02433 ,  H01L21/02463 ,  H01L21/02505 ,  H01L21/02513 ,  H01L21/02546 ,  H01S5/2201 ,  H01S5/3412 ,  H01S5/34366 ,  H01S2304/02

Abstract: Symmetric quantum dots are embedded in quantum wells. The symmetry is achieved by using slightly off-axis substrates and/or overpressure during the quantum dot growth. The quantum dot structure can be used in a variety of applications, including semiconductor lasers.

Abstract translation: 对称量子点嵌入在量子阱中。 通过在量子点生长期间使用稍微离轴的衬底和/或超压实现对称性。 量子点结构可用于各种应用，包括半导体激光器。