公开(公告)号：EP3800660A1

公开(公告)日：2021-04-07

申请号：EP20198891.2

申请日：2020-09-29

Applicant: STMicroelectronics S.r.l.

Inventor： RASCUNA, Simone ,  CHIBBARO, Claudio ,  GUARNERA, Alfio ,  SAGGIO, Mario Giuseppe ,  LIZIO, Francesco

IPC: H01L23/31

Abstract: An electronic power device (25) is provided with: a substrate (2) of silicon carbide (SiC), having a front surface (2a) and a rear surface (2b), which lie in a horizontal plane (xy) and are opposite to one another along a vertical axis (z), the substrate including an active area (A'), provided in which are a number of doped regions (4), and an edge area (A"), which is not active, distinct from and surrounding the active area (A'); a dielectric region (8a) arranged above the front surface (2a), at least at the edge area (A"); and a passivation layer (20) arranged above the front surface (2a) of the substrate (2), in contact with the dielectric region (8a) in the edge area (A"). The passivation layer (20) comprises at least one anchorage region (22) that extends throughout the thickness of the dielectric region (8a) at the edge area (A"), such as to define a mechanical anchorage for the passivation layer (20).