公开(公告)号：EP3800660A1

公开(公告)日：2021-04-07

申请号：EP20198891.2

申请日：2020-09-29

Applicant: STMicroelectronics S.r.l.

Inventor： RASCUNA, Simone ,  CHIBBARO, Claudio ,  GUARNERA, Alfio ,  SAGGIO, Mario Giuseppe ,  LIZIO, Francesco

IPC: H01L23/31

Abstract: An electronic power device (25) is provided with: a substrate (2) of silicon carbide (SiC), having a front surface (2a) and a rear surface (2b), which lie in a horizontal plane (xy) and are opposite to one another along a vertical axis (z), the substrate including an active area (A'), provided in which are a number of doped regions (4), and an edge area (A"), which is not active, distinct from and surrounding the active area (A'); a dielectric region (8a) arranged above the front surface (2a), at least at the edge area (A"); and a passivation layer (20) arranged above the front surface (2a) of the substrate (2), in contact with the dielectric region (8a) in the edge area (A"). The passivation layer (20) comprises at least one anchorage region (22) that extends throughout the thickness of the dielectric region (8a) at the edge area (A"), such as to define a mechanical anchorage for the passivation layer (20).

公开(公告)号：EP3945607A1

公开(公告)日：2022-02-02

申请号：EP21187915.0

申请日：2021-07-27

Applicant: STMicroelectronics S.r.l.

Inventor： RASCUNA', Simone ,  CHIBBARO, Claudio

IPC: H01L29/872 ,  H01L29/06 ,  H01L29/36 ,  H01L29/16 ,  H01L21/329

Abstract: An electronic device (50), comprising: a solid body (52, 53) of SiC having a surface (52a) and presenting a first conductivity type (N); a first implanted region (59') and a second implanted region (59') of a P type, which extend into the solid body (52, 53) in a direction (Z) starting from the surface (52a) and delimit between them a surface portion (64) of said solid body; a Schottky contact on the surface and in direct contact with the surface portion (64); and ohmic contacts on the surface and in direct contact with the first and second implanted regions (59'). The solid body (52, 53) comprises an epitaxial layer (52) including the surface portion (64) and a bulk portion, wherein the surface portion (64) houses a plurality of doped sub-regions (64a-64c) which extend in succession one after another in the direction (Z), are of an N type, and have a respective conductivity level higher than that of the bulk portion.