Abstract:
A thermoelectric energy harvesting device including: a first thermal-coupling interface (14); a second thermal-coupling interface (15); a membrane (17), arranged between the first thermal-coupling interface (14) and the second thermal-coupling interface (15) and connected to the first thermal-coupling interface (14) by a supporting frame (18); a thermal bridge (20) between the first interface and a thermal-coupling portion (17a) of the membrane (17); and a thermoelectric converter (12) on the membrane (17), configured to supply an electrical quantity as a function of a temperature difference between the thermal-coupling portion (17a) of the membrane (17) and the supporting frame (18).
Abstract:
A thermoelectric energy harvesting device including: a first thermal-coupling interface (14); a second thermal-coupling interface (15); a membrane (17), arranged between the first thermal-coupling interface (14) and the second thermal-coupling interface (15) and connected to the first thermal-coupling interface (14) by a supporting frame (18); a thermal bridge (20) between the first interface and a thermal-coupling portion (17a) of the membrane (17); and a thermoelectric converter (12) on the membrane (17), configured to supply an electrical quantity as a function of a temperature difference between the thermal-coupling portion (17a) of the membrane (17) and the supporting frame (18).
Abstract:
Electronic device (50) comprising at least a first and a second branch (21A, 21B, 21C), each branch including a first and a second transistor (23, 24) arranged in series to each other and formed in respective dice (51) of semiconductor material. The dice (51) are sandwiched between a first substrate element (55) and a second substrate element (56). The first and the second substrate elements (55, 56) are formed each by a multilayer including a first conductive layer (57), a second conductive layer (58) and an insulating layer (59) extending between the first and the second conductive layers. The first conductive layers (57) of the first and the second substrate elements (55, 56) face towards the outside of the electronic device and define a first and a second main face of the electronic device. The second conductive layer (58) of the first and the second substrate elements (55, 56) is shaped so as to form contact regions (52A-52F, 33A-33D) facing and in selective electrical contact with the plurality of dice (51).
Abstract:
A power semiconductor device (2) including: a first die (6) and a second die (106), each of which includes a plurality of conductive contact regions (12) and a passivation region (13), which includes a number of projecting dielectric regions (10') and a number of windows (18, 118), adjacent windows being separated by a corresponding projecting dielectric region, each conductive contact region being arranged within a corresponding window; and a package (1) of the surface mount type, housing the first and second dice. The package includes: a first bottom insulation multilayer (26) and a second bottom insulation multilayer (126), which carry, respectively, the first and second dice; and a covering metal layer (16b), arranged on top of the first and second dice and including projecting metal regions (36), which extend into the windows so as to couple electrically with corresponding conductive contact regions. The covering metal layer moreover forms a number of cavities (40), which are interposed between the projecting metal regions so as to overlie corresponding projecting dielectric regions.
Abstract:
Pin blocking element (20) for connecting an electronic, micro-mechanical and/or micro-electromechanical component, in particular for controlling the propulsion of an electric vehicle. The pin blocking element is formed by a holed body (21) having a first end, a second end and an axial cavity (22) configured for fittingly accommodating a connecting pin (31). A first flange (23) projects transversely from the holed body (21) at the first end and a second flange (24) projects transversely from the holed body (21) at the second end. The first flange (23) has a greater area than the second flange (24) and is configured to be ultrasonically welded to a conductive bearing plate (25) to form a power module.
Abstract:
A connecting strip (50) of conductive elastic material having an arched shape having a concave side (50A) and a convex side (50B). The connecting strip is fixed at the ends to a support carrying a die (72, 73) with the convex side facing the support. During bonding, the connecting strip undergoes elastic deformation and presses against the die (72, 73), thus electrically connecting the at least one die (72, 73) to the support (70).
Abstract:
A connecting strip (50) of conductive elastic material having an arched shape having a concave side (50A) and a convex side (50B). The connecting strip is fixed at the ends to a support carrying a die (72, 73) with the convex side facing the support. During bonding, the connecting strip undergoes elastic deformation and presses against the die (72, 73), thus electrically connecting the at least one die (72, 73) to the support (70).
Abstract:
Packaged device (57) having a carrying base (30); an accommodation cavity (32) in the carrying base; a semiconductor die (37) in the accommodation cavity (32), the semiconductor die having die pads (39); a protective layer (40), covering the semiconductor die and the carrying base; first vias (43A) in the protective layer, at the die pads (39); and connection terminals (49) of conductive material. The connection terminals have first connection portions (45A) in the first vias (43A), in electrical contact with the die pads (39), and second connection portions (46B, 55), extending on the protective layer (40), along a side surface (57C) of the packaged device.
Abstract:
An electronic power module (20) comprising a case (22) that houses a stack (88), which includes: a first substrate (26) of a DBC type or the like; a die (27), integrating an electronic component having one or more electrical-conduction terminals, mechanically and thermally coupled to the first substrate; and a second substrate (29), of a DBC type or the like, which extends over the first substrate and over the die and presents a conductive path (32) facing the die. The die is mechanically and thermally coupled to the first substrate by a first coupling region (30) of a sintered thermoconductive paste, and the one or more conduction terminals of the electronic component are mechanically, electrically, and thermally coupled to the conductive path (32) of the second substrate (29) by a second coupling region (34) of sintered thermoconductive paste.