Abstract:
Power module (1) packaged in a housing (2) accommodating a carrying substrate (10) forming a plurality of connection regions (14A-14D) of conductive material. An electronic component (15A, 10B) is arranged inside the housing, attached to a connection region (14A, 14B) of the plurality of connection regions (14A-14D). An electrical connector (5), coupled to the electronic component, extends towards the main surface (2A) of the housing (2) and is accessible from the outside of the housing. The electrical connector has a tubular portion forming a pillar (8) fixed to a pin which protrudes from the main surface of the housing. The housing (2) includes a packaging mass (3) of electrically insulating material that embeds the pillar (8) and blocks it therein.
Abstract:
An electronic power module (20) comprising a case (22) that houses a stack (88), which includes: a first substrate (26) of a DBC type or the like; a die (27), integrating an electronic component having one or more electrical-conduction terminals, mechanically and thermally coupled to the first substrate; and a second substrate (29), of a DBC type or the like, which extends over the first substrate and over the die and presents a conductive path (32) facing the die. The die is mechanically and thermally coupled to the first substrate by a first coupling region (30) of a sintered thermoconductive paste, and the one or more conduction terminals of the electronic component are mechanically, electrically, and thermally coupled to the conductive path (32) of the second substrate (29) by a second coupling region (34) of sintered thermoconductive paste.
Abstract:
Electronic device (50) comprising at least a first and a second branch (21A, 21B, 21C), each branch including a first and a second transistor (23, 24) arranged in series to each other and formed in respective dice (51) of semiconductor material. The dice (51) are sandwiched between a first substrate element (55) and a second substrate element (56). The first and the second substrate elements (55, 56) are formed each by a multilayer including a first conductive layer (57), a second conductive layer (58) and an insulating layer (59) extending between the first and the second conductive layers. The first conductive layers (57) of the first and the second substrate elements (55, 56) face towards the outside of the electronic device and define a first and a second main face of the electronic device. The second conductive layer (58) of the first and the second substrate elements (55, 56) is shaped so as to form contact regions (52A-52F, 33A-33D) facing and in selective electrical contact with the plurality of dice (51).
Abstract:
A packaged power electronic device (50, 150) comprises: a first support element (56) having a first and a second face (56', 56"), the first face (56') of the first support element forming a first thermal dissipation surface (50A, 150A) of the device (50, 150); a second support element (57) having a first and a second face (57', 57"), the first face (57') of the second support element (57) forming a second thermal dissipation surface (50B, 150B) of the device (50, 150), the first and the second support elements (56, 57) being superimposed to each other with the respective second faces (56", 57") facing each other; a first, a second, a third and a fourth power component (51-54) (e.g., power transistors), the first and third power components (51, 53) being attached to the second face (57") of the second support element (57), the second and the fourth power components (52, 54) being attached to the second face (56") of the first support element (56); a first contacting element (60) superimposed and in electric contact with the second and the fourth power components (51, 53); a second contacting element (80) superimposed and in electric contact with the first power component (51); a third contacting element (81) superimposed and in electric contact with the third power component (54); a plurality of leads (59A-59H, 77A-77F) electrically coupled with the power components (51-54) through the first and/or the second support elements (56, 57); a thermally conductive body (93, 94) (e.g., a block of conductive material (94), such as copper, or an adhesive mass (93), such as solder) arranged between the first, the second and the third contacting elements (60, 80, 81); the second and the third contacting elements (80, 81) being arranged side by side and electrically insulated from each other; wherein the first and the second support elements (56, 57) and the first, the second and third contacting elements (60, 80, 81) are formed by electrically insulating and thermally conductive multilayers, e.g. direct bonded copper (DBC). The first, second and third contacting elements (60, 80, 81) may have a first and a second dimension that are greater than a depth dimension, the second and third contacting elements (80, 81) being adjacent to each other on a side extending along the first dimension (X) and being offset with respect to the first contacting element (60) along the second direction (Y) and optionally also in the first direction (X). The first, second, third and fourth power components (51-54) may be electrically connected to form a full-bridge. First conductive layers (80A, 81A) of the second and the third contacting elements (80, 81) may be coupled to conductive regions (58H, 58G) of the first support element (56) through a first and, respectively, a second connection pillar element (67, 68) of conductive material. The device (50, 150) may further comprise a first and a second clip element (82, 83) of electrically conductive material, the first clip element (82) extending between the first conductive layer (80A) of the second contacting element (80) and the first power component (51) and the second clip element (83) extending between the first conductive layer (81A) of the third contacting element (81) and the third power component (53), the first and the second clip elements (82, 83) having a respective projecting portion extending beyond the first and, respectively, the third power component (51, 53) and being electrically coupled at the respective projecting portion to the first and respectively the second connection pillar element (67, 68). The second and the third contacting elements (80, 81) may be longer than the first and the third power components (51, 53) and coupled at one own projecting portion to the first and respectively the second connection pillar element (67, 68). A first and a second supporting pillar portions (85) may extend between a respective projecting portion and the second support element (57) aligned with the first and, respectively, the second connection pillar elements (67, 68), the first and the second supporting pillar portions (85) being formed each by an electrically insulating and thermally conductive multilayer, e.g. DBC, and forming, with the respective first and second connection pillar elements (67, 68), a first and a second alignment and spacing structure (89). The first and the second support elements (56, 57) may further have an elongated shape with a first and a second longitudinal end, wherein the first and second alignment and spacing structures (89) are arranged in proximity to the first longitudinal end of the first and the second support elements (56, 57), the device (50, 150) comprising a third and a fourth alignment and spacing structures (90) extending in proximity to the second longitudinal end of the first and the second support elements (56, 57), wherein the third alignment and spacing structure (90) comprises a third supporting pillar portion (92) and a first supporting pillar element (91) aligned with each other and the fourth alignment and spacing structure (90) comprises a fourth supporting pillar portion (92) and a second supporting pillar element (91) aligned with each other, the third and the fourth supporting pillar portions (92) being formed each by an electrically insulating multilayer, e.g., DBC, the first and the second supporting pillar elements (91) being of conductive material. The first, second and third contacting element (60, 80, 81) and the thermally conductive body (93, 94) may form a thermal distribution structure (95), assembled before bonding with the power components (51-54).
Abstract:
Pin blocking element (20) for connecting an electronic, micro-mechanical and/or micro-electromechanical component, in particular for controlling the propulsion of an electric vehicle. The pin blocking element is formed by a holed body (21) having a first end, a second end and an axial cavity (22) configured for fittingly accommodating a connecting pin (31). A first flange (23) projects transversely from the holed body (21) at the first end and a second flange (24) projects transversely from the holed body (21) at the second end. The first flange (23) has a greater area than the second flange (24) and is configured to be ultrasonically welded to a conductive bearing plate (25) to form a power module.
Abstract:
The power device for surface mounting has a leadframe (15) including a die-attach support (24C) and at least one first lead (4B) and one second lead (4C). A die (6), of semiconductor material, is bonded to the die-attach support, and a package (2), of insulating material and parallelepipedal shape, surrounds the die and at least in part the die-attach support (24C) and has a package height (H1). The first and second leads (4B, 4C) have outer portions (14B, 14C) extending outside the package (2), from two opposite lateral surfaces (2C, 2D) of the package. The outer portions of the leads have lead heights (H2) greater than the package height (H1), extend throughout the height of the package, and have respective portions projecting from the first base (2A).