Abstract:
The packaged power electronic device (1) has a bearing structure (15) including a base section (16) and a transverse section (17) extending transversely to the base section. A die (2) is bonded to the base section of the bearing structure and has a first terminal (11) on a first main face (2A) and a second and a third terminal (12, 13) on a second main face (2B). A package (5) of insulating material embeds the semiconductor die (2), the second terminal (12), the third terminal (13) and at least partially the carrying base (16). A first, a second and a third outer connection region (36, 31, 33) are electrically coupled to the first, the second and the third terminals of the die, respectively, are laterally surrounded by the package and face the second main surface (5B) of the package. The transverse section (17) of the bearing structure extends from the base section (16) towards the second main surface of the package and has a higher height with respect to the die.
Abstract:
The packaged power electronic device (1) has a bearing structure (15) including a base section (16) and a transverse section (17) extending transversely to the base section. A die (2) is bonded to the base section of the bearing structure and has a first terminal (11) on a first main face (2A) and a second and a third terminal (12, 13) on a second main face (2B). A package (5) of insulating material embeds the semiconductor die (2), the second terminal (12), the third terminal (13) and at least partially the carrying base (16). A first, a second and a third outer connection region (36, 31, 33) are electrically coupled to the first, the second and the third terminals of the die, respectively, are laterally surrounded by the package and face the second main surface (5B) of the package. The transverse section (17) of the bearing structure extends from the base section (16) towards the second main surface of the package and has a higher height with respect to the die.
Abstract:
An electronic power module (20) comprising a case (22) that houses a stack (88), which includes: a first substrate (26) of a DBC type or the like; a die (27), integrating an electronic component having one or more electrical-conduction terminals, mechanically and thermally coupled to the first substrate; and a second substrate (29), of a DBC type or the like, which extends over the first substrate and over the die and presents a conductive path (32) facing the die. The die is mechanically and thermally coupled to the first substrate by a first coupling region (30) of a sintered thermoconductive paste, and the one or more conduction terminals of the electronic component are mechanically, electrically, and thermally coupled to the conductive path (32) of the second substrate (29) by a second coupling region (34) of sintered thermoconductive paste.