公开(公告)号：EP2121513B1

公开(公告)日：2015-01-21

申请号：EP08707208.8

申请日：2008-01-23

Applicant: STMicroelectronics Srl

Inventor： BALDO, Lorenzo ,  COMBI, Chantal ,  CORTESE, Mario, Francesco

IPC: B81B7/00 ,  G01L9/00 ,  G01L13/02 ,  G01D11/24 ,  G01L19/14

CPC classification number: B81B7/0061 ,  B81B2201/0257 ,  B81B2201/0264 ,  B81C2203/0154 ,  G01L19/141 ,  G01L19/147 ,  G01L19/148 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2924/10253 ,  H01L2924/1461 ,  H01L2924/00014 ,  H01L2924/00

公开(公告)号：EP1945561B1

公开(公告)日：2018-10-24

申请号：EP06777802.7

申请日：2006-07-14

Applicant: STMicroelectronics Srl

Inventor： COMBI, Chantal ,  VIGNA, Benedetto ,  ZIGLIOLI, Federico Giovanni ,  BALDO, Lorenzo ,  MAGUGLIANI, Manuela ,  LASALANDRA, Ernesto ,  RIVA, Caterina

IPC: B81B7/00 ,  B81B7/02 ,  B81C1/00

CPC classification number: B81B7/0061 ,  B81B7/02 ,  B81B2201/0235 ,  B81B2201/0264 ,  B81C1/0023 ,  H01L2224/48091 ,  H01L2224/73265 ,  H01L2924/1461 ,  H01L2924/3025 ,  H04R1/04 ,  H04R19/005 ,  H01L2924/00014 ,  H01L2924/00

Abstract: A substrate-level assembly having a device substrate of semiconductor material with a top face and housing a first integrated device, including a buried cavity formed within the device substrate, and with a membrane suspended over the buried cavity in the proximity of the top face. A capping substrate is coupled to the device substrate above the top face so as to cover the first integrated device in such a manner that a first empty space is provided above the membrane. Electrical-contact elements electrically connect the integrated device with the outside of the substrate-level assembly. In one embodiment, the device substrate integrates at least a further integrated device provided with a respective membrane, and a further empty space, fluidly isolated from the first empty space, is provided over the respective membrane of the further integrated device.