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1.发明授权Process for manufacturing a micromechanical structure having a buried area provided with a filter 有权一种用于与带有滤波器的掩埋区制造微机械结构的方法
公开(公告)号：EP2412665B1
公开(公告)日：2013-06-19
申请号：EP11175428.9
申请日：2011-07-26
Applicant: STMicroelectronics Srl
Inventor： Ferrera, Marco , Perletti, Matteo , Varisco, Igor , Zanotti, Luca
CPC classification number: B81C1/00119 , B01D67/0062 , B01D71/02 , B01D2325/021 , B01D2325/028 , B01L3/502707 , B01L3/502753 , B01L2300/0681 , B81B2201/10 , B81C1/00071 , B81C1/00087 , B81C2201/0133 , B81C2201/0157 , F04B19/006
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2.发明授权
公开(公告)号：EP2500313B1
公开(公告)日：2014-06-04
申请号：EP12160022.5
申请日：2012-03-17
Applicant: STMicroelectronics Srl
Inventor： Corona, Pietro , Ferrera, Marco , Varisco, Igor , Campedelli, Roberto
CPC classification number: B81C1/00158 , B81B2201/0257 , B81B2203/0127 , B81C1/00293 , B81C2203/0145 , G01L9/0042 , G01L9/0073
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3.发明公开Process for manufacturing a membrane microelectromechanical device and membrane microelectromechanical device 有权Verfahren zur Herstellung einer mikroelektromechanischen Membranvorrichtung und mikroelektromechanische Membranvorrichtung
公开(公告)号：EP2500313A1
公开(公告)日：2012-09-19
申请号：EP12160022.5
申请日：2012-03-17
Applicant: STMicroelectronics Srl
Inventor： Corona, Pietro , Ferrera, Marco , Varisco, Igor , Campedelli, Roberto
CPC classification number: B81C1/00158 , B81B2201/0257 , B81B2203/0127 , B81C1/00293 , B81C2203/0145 , G01L9/0042 , G01L9/0073
Abstract: A process for manufacturing a microelectromechanical device envisages: forming a semiconductor structural layer (3) separated from a substrate (2) by a dielectric layer (4), and opening trenches (10) through the structural layer (3), as far as the dielectric layer (4). Sacrificial portion (4a) of the dielectric layer (4) are selectively removed through the trenches (10) in membrane regions (M) so as to free a corresponding portion of the structural layer (3) that forms a membrane (11). To close the trenches (10), the wafer (1) is brought to an annealing temperature for a time interval in such a way as to cause migration of the atoms of the membrane (11) so as to reach a minimum energy configuration.
Abstract translation: 微机电装置的制造方法设想：通过介电层（4）形成与基板（2）分离的半导体结构层（3），通过结构层（3）形成开口沟槽（10），只要 电介质层（4）。 电介质层（4）的牺牲部分（4a）通过膜区域（M）中的沟槽（10）被选择性地去除，以便释放形成膜（11）的结构层（3）的相应部分。 为了封闭沟槽（10），使得晶片（1）以使得膜（11）的原子迁移以达到最小能量构型的方式达到退火温度一段时间间隔。
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