Abstract:
A micro-electromechanical device includes a semiconductor body (5), in which at least one first microstructure (2) and one second microstructure (3) of reference are integrated. The first microstructure (2) and the second microstructure (3) are arranged in the body (5) so as to undergo equal strains as a result of thermal expansions of said body (5; 105; 205; 305). Furthermore, the first microstructure (2) is provided with movable parts (6) and fixed parts (7) with respect to the body (5), and the second microstructure (3) has a shape that is substantially symmetrical to the first microstructure (2) and is fixed with respect to the body (5).
Abstract:
A process for the fabrication of an inertial sensor with failure threshold, including the steps of: forming, on top of a substrate (2) of a semiconductor wafer (1), at least one sample element (6) embedded in a sacrificial region (3, 12); forming, on top of the sacrificial region (3, 12), a body (18) connected to the sample element (6); and etching the sacrificial region (3, 12), so as to free the body (18) and the sample element (6).
Abstract:
An inertial sensor with failure threshold includes: a first body (2) and a second body (18), which can move relatively with respect to one another and are constrained by a plurality of elastic elements; and at least one sample element (6) connected between the first body (2) and the second body (18) and shaped so as to be subjected to a stress when the second body (18) is outside of a relative resting position with respect to the first body (2). The sample element (6) has at least one weakened region (9, 10).