公开(公告)号：SG10201905607UA

公开(公告)日：2020-02-27

申请号：SG10201905607U

申请日：2019-06-18

Applicant: SAMSUNG ELECTRONICS CO LTD

Inventor： MIN-HEE CHOI ,  SEOKHOON KIM ,  CHOEUN LEE ,  EDWARDNAMGYU CHO ,  SEUNG HUN LEE

Abstract: A semiconductor device including a substrate including an active pattern; a gate electrode crossing the active pattern; a source/drain pattern adjacent to one side of the gate electrode and on an upper portion of the active pattern; an active contact electrically connected to the source/drain pattern; and a silicide layer between the source/drain pattern and the active contact, the source/drain pattern including a body part including a plurality of semiconductor patterns; and a capping pattern on the body part, the body part has a first facet, a second facet on the first facet, and a corner edge defined where the first facet meets the second facet, the corner edge extending parallel to the substrate, the capping pattern covers the second facet of the body part and exposes the corner edge, and the silicide layer covers a top surface of the body part and a top surface of the capping pattern.

公开(公告)号：SG10201907224WA

公开(公告)日：2020-04-29

申请号：SG10201907224W

申请日：2019-08-05

Applicant: SAMSUNG ELECTRONICS CO LTD

Inventor： SUNGUK JANG ,  SUJIN JUNG ,  JINYEONG JOE ,  JEONGHO YOO ,  SEUNG HUN LEE ,  JONGRYEOL YOO

Abstract: A semiconductor device is provided. The semiconductor device comprises: a first active fin protruding from a substrate; a first gate pattern covering side and top surfaces of the first active fin; and a first source/drain pattern disposed on both sides of the first gate pattern. The first source/drain pattern comprises: a first lower side and a second lower side spaced from each other; a first upper side extending from the first lower side; and a second upper side extending from the second lower side. The first lower side forms a first angle with an upper surface of the substrate, and the second upper side forms a second angle with the upper surface of the substrate, wherein the first angle is greater than the second angle.

公开(公告)号：US20220278204A1

公开(公告)日：2022-09-01

申请号：US17742985

申请日：2022-05-12

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： ILGYOU SHIN ,  MINYI KIM ,  MYUNG GIL KANG ,  JINBUM KIM ,  SEUNG HUN LEE ,  KEUN HWI CHO

IPC: H01L29/15 ,  H01L29/78 ,  H01L29/417 ,  H01L29/10

Abstract: A semiconductor device includes; a substrate including a first region and a second region, a first active pattern extending upward from the first region, a first superlattice pattern on the first active pattern, a first active fin centrally disposed on the first active pattern, a first gate electrode disposed on the first active fin, and first source/drain patterns disposed on opposing sides of the first active fin and on the first active pattern. The first superlattice pattern includes at least one first semiconductor layer and at least one first blocker-containing layer, and the first blocker-containing layer includes at least one of oxygen, carbon, fluorine and nitrogen.

公开(公告)号：US20210367036A1

公开(公告)日：2021-11-25

申请号：US17128153

申请日：2020-12-20

Applicant: Samsung Electronics Co., Ltd.

Inventor： JINBUM KIM ,  DAHYE KIM ,  SEOKHOON KIM ,  JAEMUN KIM ,  ILGYOU SHIN ,  Haejun YU ,  KYUNGIN CHOI ,  KIHYUN HWANG ,  SANGMOON LEE ,  SEUNG HUN LEE ,  KEUN HWI CHO

IPC: H01L29/08 ,  H01L29/165 ,  H01L29/78 ,  H01L27/092 ,  H01L29/423 ,  H01L29/66 ,  H01L21/8238

Abstract: A semiconductor device includes an active pattern on a substrate, a pair of source/drain patterns on the active pattern, a channel pattern between the pair of source/drain patterns, the channel pattern including semiconductor patterns stacked to be spaced apart from each other, and a gate electrode crossing the channel pattern and extending in a first direction. One of the pair of source/drain patterns includes a first semiconductor layer and a second semiconductor layer thereon. The first semiconductor layer is in contact with a first semiconductor pattern, which is one of the stacked semiconductor patterns. The largest widths of the first semiconductor pattern, the first semiconductor layer, and the second semiconductor layer in the first direction are a first width, a second width, a third width, respectively, and the second width is larger than the first width and smaller than the third width.

公开(公告)号：US20220359678A1

公开(公告)日：2022-11-10

申请号：US17552446

申请日：2021-12-16

Applicant: Samsung Electronics Co., Ltd.

Inventor： GYEOM KIM ,  JINBUM KIM ,  DONGWOO KIM ,  DONGSUK SHIN ,  SANGMOON LEE ,  SEUNG HUN LEE

IPC: H01L29/417 ,  H01L27/092 ,  H01L29/06 ,  H01L29/423 ,  H01L29/78 ,  H01L29/786 ,  H01L21/02 ,  H01L29/40 ,  H01L29/66

Abstract: A semiconductor device includes a substrate including an active pattern, a channel pattern and a source/drain pattern on the active pattern, a gate electrode provided on the channel pattern and extended in a first direction, and an active contact coupled to the source/drain pattern. The active contact includes a buried portion buried in the source/drain pattern and a contact portion on the buried portion. The buried portion includes an expansion portion provided in a lower portion of the source/drain pattern and a vertical extension portion connecting the contact portion to the expansion portion.

公开(公告)号：US20200381251A1

公开(公告)日：2020-12-03

申请号：US16838089

申请日：2020-04-02

Applicant: Samsung Electronics Co., Ltd.

Inventor： JAEMUN KIM ,  GYEOM KIM ,  SEUNG HUN LEE ,  DAHYE KIM ,  ILGYOU SHIN ,  SANGMOON LEE ,  KYUNGIN CHOI

IPC: H01L21/02 ,  H01L29/06 ,  H01L29/423 ,  H01L29/786 ,  H01L21/306 ,  H01L21/762 ,  H01L29/66

Abstract: A method includes forming an active pattern on a substrate, the active pattern comprising first semiconductor patterns and second semiconductor patterns, which are alternately stacked, forming a capping pattern on a top surface and a sidewall of the active pattern, performing a deposition process on the capping pattern to form an insulating layer, and forming a sacrificial gate pattern intersecting the active pattern on the insulating layer. The capping pattern has a crystalline structure and is in physical contact with sidewalls of the first semiconductor patterns and sidewalls of the second semiconductor patterns.

公开(公告)号：US20240162293A1

公开(公告)日：2024-05-16

申请号：US18415765

申请日：2024-01-18

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jinbum Kim ,  DAHYE KIM ,  SEOKHOON KIM ,  JAEMUN KIM ,  Ilgyou Shin ,  Haejun YU ,  KYUNGIN CHOI ,  KIHYUN HWANG ,  SANGMOON LEE ,  SEUNG HUN LEE ,  KEUN HWI CHO

IPC: H01L29/08 ,  H01L21/8238 ,  H01L27/092 ,  H01L29/165 ,  H01L29/423 ,  H01L29/66 ,  H01L29/78 ,  H01L29/786

CPC classification number: H01L29/0847 ,  H01L21/823814 ,  H01L21/823828 ,  H01L27/092 ,  H01L29/165 ,  H01L29/42392 ,  H01L29/66545 ,  H01L29/78 ,  H01L29/7848 ,  H01L29/78696

Abstract: A semiconductor device includes an active pattern on a substrate, a pair of source/drain patterns on the active pattern, a channel pattern between the pair of source/drain patterns, the channel pattern including semiconductor patterns stacked to be spaced apart from each other, and a gate electrode crossing the channel pattern and extending in a first direction. One of the pair of source/drain patterns includes a first semiconductor layer and a second semiconductor layer thereon. The first semiconductor layer is in contact with a first semiconductor pattern, which is one of the stacked semiconductor patterns. The largest widths of the first semiconductor pattern, the first semiconductor layer, and the second semiconductor layer in the first direction are a first width, a second width, a third width, respectively, and the second width is larger than the first width and smaller than the third width.

公开(公告)号：US20220344469A1

公开(公告)日：2022-10-27

申请号：US17862453

申请日：2022-07-12

Applicant: Samsung Electronics Co., Ltd.

Inventor： JINBUM KIM ,  DAHYE KIM ,  SEOKHOON KIM ,  JAEMUN KIM ,  ILGYOU SHIN ,  Haejun YU ,  KYUNGIN CHOI ,  KIHYUN HWANG ,  SANGMOON LEE ,  SEUNG HUN LEE ,  KEUN HWI CHO

IPC: H01L29/08 ,  H01L29/165 ,  H01L29/78 ,  H01L21/8238 ,  H01L29/423 ,  H01L29/66 ,  H01L27/092 ,  H01L29/786

Abstract: A semiconductor device includes an active pattern on a substrate, a pair of source/drain patterns on the active pattern, a channel pattern between the pair of source/drain patterns, the channel pattern including semiconductor patterns stacked to be spaced apart from each other, and a gate electrode crossing the channel pattern and extending in a first direction. One of the pair of source/drain patterns includes a first semiconductor layer and a second semiconductor layer thereon. The first semiconductor layer is in contact with a first semiconductor pattern, which is one of the stacked semiconductor patterns. The largest widths of the first semiconductor pattern, the first semiconductor layer, and the second semiconductor layer in the first direction are a first width, a second width, a third width, respectively, and the second width is larger than the first width and smaller than the third width.

公开(公告)号：US20220246728A1

公开(公告)日：2022-08-04

申请号：US17514379

申请日：2021-10-29

Applicant: Samsung Electronics Co., Ltd.

Inventor： DAHYE KIM ,  JINBUM KIM ,  JAEMUN KIM ,  SANGMOON LEE ,  SEUNG HUN LEE

IPC: H01L29/165 ,  H01L27/092 ,  H01L29/786 ,  H01L29/417 ,  H01L29/423 ,  H01L29/06

Abstract: A semiconductor device includes a substrate including a peripheral region, a first active pattern on the peripheral region, the first active pattern having an upper portion including first semiconductor patterns and second semiconductor patterns, which are alternately stacked, a first gate electrode intersecting the first active pattern, a pair of first source/drain patterns provided at both sides of the first gate electrode, respectively, a first capping layer on the first active pattern, a second capping layer on the first capping layer, and a first gate insulating layer between the second capping layer and the first gate electrode. The first capping layer is between a sidewall of the first active pattern and the second capping layer. A concentration of germanium (Ge) of the first capping layer is greater than a concentration of germanium of the second capping layer.

公开(公告)号：US20220102217A1

公开(公告)日：2022-03-31

申请号：US17643935

申请日：2021-12-13

Applicant: Samsung Electronics Co., Ltd.

Inventor： JAEMUN KIM ,  GYEOM KIM ,  SEUNG HUN LEE ,  DAHYE KIM ,  ILGYOU SHIN ,  SANGMOON LEE ,  KYUNGIN CHOI

IPC: H01L21/8234 ,  H01L21/02 ,  H01L29/06 ,  H01L29/423 ,  H01L29/786 ,  H01L29/66 ,  H01L21/306 ,  H01L21/762

Abstract: A method includes forming an active pattern on a substrate, the active pattern comprising first semiconductor patterns and second semiconductor patterns, which are alternately stacked, forming a capping pattern on a top surface and a sidewall of the active pattern, performing a deposition process on the capping pattern to form an insulating layer, and forming a sacrificial gate pattern intersecting the active pattern on the insulating layer. The capping pattern has a crystalline structure and is in physical contact with sidewalls of the first semiconductor patterns and sidewalls of the second semiconductor patterns.