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    POWER TRANSISTOR
    1.
    发明专利
    POWER TRANSISTOR 失效

    公开(公告)号：JPH03254132A

    公开(公告)日：1991-11-13

    申请号：JP5206790

    申请日：1990-03-02

    Applicant: SHARP KK

    Inventor： KOYAMA JUNICHIRO ,  ASO AKIRA

    IPC: H01L29/73 ,  H01L21/331 ,  H01L29/08 ,  H01L29/732

    Abstract: PURPOSE:To prevent the current from concentrating on a transistor near an emitter electrode pad by making the connection surface of an emitter electrode contact section with an emitter electrode larger in proportion to the distance from the emitter electrode pad. CONSTITUTION:The area of an emitter electrode contact section 3 of a unit transistor is made larger in proportion to the distance from an emitter electrode pad 5 in order that the total of an emitter electrode contact resistance 9 and an emitter electrode connection resistance 10 between each unit transistor and the emitter electrode pad 5 is almost equal. Consequently, a resistance between each unit transistor and the emitter electrode pad 5 is almost equal. By this method, the current is prevented from concentrating on a unit transistor near the emitter electrode pad 5.

    PHOTODIODE
    3.
    发明专利
    PHOTODIODE 失效

    公开(公告)号：JPH02187079A

    公开(公告)日：1990-07-23

    申请号：JP707789

    申请日：1989-01-13

    Applicant: SHARP KK

    Inventor： AKAI MITSUKUNI ,  ASO AKIRA

    IPC: H01L31/10

    Abstract: PURPOSE:To improve the efficiency of a multi-divided photodetector by a method wherein a second conductivity type buried diffused layer is provided selectively on the surface of a first conductivity type semiconductor substrate and a second conductivity type epitaxial layer is built up on the surface of the buried diffused layer. CONSTITUTION:An N -type buried diffused layer 19 is formed selectively on the surface of a P -type semiconductor substrate 18 and an N -type epitaxial layer 20 is built up on it. With this constitution, carriers generated in the N - type epitaxial layer 20 having a suitable thickness are reflected by a back surface effect caused by a potential induced by the N -type buried diffused layer 19 and, further, carriers generated in the P -type semiconductor substrate 18 are trapped by a potential induced by the N -type buried diffused layer 19 and the carriers flowing into an isolation diode are reduced and the light output of the isolation diode is reduced. Therefore, the efficiency of a multi- divided photodetector can be improved.

    POWER TRANSISTOR
    4.
    发明专利
    POWER TRANSISTOR 失效

    公开(公告)号：JPS63288063A

    公开(公告)日：1988-11-25

    申请号：JP12323987

    申请日：1987-05-20

    Applicant: SHARP KK

    Inventor： ASO AKIRA ,  SHOZEN KAZUNOBU ,  OKADA MASATAKE

    IPC: H01L29/73 ,  H01L21/331 ,  H01L29/72 ,  H01L29/732

    Abstract: PURPOSE:To prevent trouble such as the stepped disconnection of a resistor on manufacture by attaining an equal resistance value by the uniform thickness of the resistor by forming the resistor connected in series with an emitter to the same conductivity type as emitter diffusion and composing the resistor of an impurity diffusion layer shallower than emitter diffusion in a power transistor. CONSTITUTION:A base 2 and emitters 3 are shaped to a semiconductor substrate 1, and an impurity having the same conductivity type as emitter diffusion is diffused into a region continuing to the emitters 3 through a process separate from emitter diffusion to form a resistor 8. Diffusion shallower and more uniform than the emitters 3 is acquired by using an ion implantation method as the forming method of the resistor 8, and the resistor 8 having an arbitrary resistance value is shaped. An insulating film 4 coating the semiconductor substrate 1, the base 2 and the emitters 3 and the resistor 8 is formed, and opening sections 4a, 4b are shaped to the insulating films 4 just above the resistor 8 and the base 2. An emitter electrode 6 is formed through the opening section 4a, and the series circuit of the emitter electrode 6, the resistor 8 and the emitters 3 is shaped. Base electrodes 7 are formed through the opening sections 4b.

    PHOTODETECTOR
    7.
    发明专利
    PHOTODETECTOR 失效

    公开(公告)号：JPH03262168A

    公开(公告)日：1991-11-21

    申请号：JP6085890

    申请日：1990-03-12

    Applicant: SHARP KK

    Inventor： KIMURA TAKEYA ,  ASO AKIRA

    IPC: H01L31/10

    Abstract: PURPOSE:To decrease a series resistance of a photodetector so as to improve it in responsivity by a method wherein a contact section is provided along the long side of a P-type diffusion layer which serves as surface electrodes of the photodetectors provided to the inner side of the surface of an N-type semiconductor substrate, and a diffusion layer is provided along the inner circumference of peripheral photodetectors which surround the photodetectors so as to connect the P-type diffusion layer and the N-type substrate together. CONSTITUTION:Long contact sections 20, 20, 20, and 20 are provided onto the surface of inner photodetectors elements 2, 3, 4, and 5 along the long sides of P -type diffusion layers 13, 14, 15, and 16 and connected to Al electrode wirings 7, 8, 9, and 10 penetrating through an insulating film 12. An N -type diffusion region 19 is formed along the inner circumference of a P-type diffusion layer 17 on the surface of peripheral photodetectors 6 which surround the inner photodetectors 2, 3, 4, and 5. The N -type diffusion region 19 enables the P -type diffusion layer 17 to be short-circuited to the N layer of the semiconductor substrate 1 along the overall inner circumference of the peripheral photodetectors 6. A contact 19-1 is provided to a part of the N -type diffusion region 19 and wired to a cathode electrode 11 penetrating through the insulating film 12.

    TRANSISTOR
    10.
    发明专利
    TRANSISTOR 失效

    公开(公告)号：JPH0277173A

    公开(公告)日：1990-03-16

    申请号：JP22917288

    申请日：1988-09-13

    Applicant: SHARP KK

    Inventor： DOI YOSHIMI ,  ASO AKIRA

    IPC: H01L29/73 ,  H01L21/331 ,  H01L29/732 ,  H01L31/10

    Abstract: PURPOSE:To lessen the variability of an impurity concentration and a diffusion depth in the case of diffusion by a method wherein a firsttime diffusion is performed so as to make deep base diffused regions on the periphery of an emitter diffused region in a high concentration and a second-time diffusion is performed so as to make shallow a base diffused region in a low concentration. CONSTITUTION:A first-time deep diffusion is performed in the periphery of a region scheduled to perform an emitter diffusion in a high concentration of p to form base diffused regions 3. Then, a second-time shallow diffusion is performed in the lower part of the region scheduled to perform the emitter diffusion in a low concentration of p to form a base diffused region 4 under the lower part of an emitter diffused region 5. Then, the region 5 is formed shallowly on the upper part of the region 4. Both ends of this region 5 are extended to the end part on one side of each region 3. The control of an hFE is performed by adjusting a diffusion concentration in the region 4 under the lower part of the region 5. That is, as the region 5 and the region 4 under the lower part of the region 5 are formed shallowly in a low concentration, a diffusion time is shortened and the variability of the concentration of a diffused impurity and a diffusion depth, which is caused by the variability of impurity concentration and temperature, is reduced.

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