Heat-resistant resin film with metal layer and wiring board, and method for manufaacturing them

    公开(公告)号:HK1058334A1

    公开(公告)日:2004-05-14

    申请号:HK04101150

    申请日:2004-02-18

    Abstract: The present invention provides a heat-resistant resin film with a metal layer strongly bonded to the heat-resistant resin film without deteriorating the physical properties possessed by the heat-resistant resin film, and a wiring board using the heat-resistant resin film with the metal layer. The heat-resistant resin film with the metal layer includes a heat-resistant adhesive coated on at least one side of the heat-resistant resin film, and the metal layer provided on the heat-resistant adhesive by at least one of sputtering, vacuum evaporation, and plating. The heat-resistant adhesive has a glass transition temperature (Tg) of 60° C. to 250° C., generates 250 ppm or less of gases at 100° C. to 300° C., and has an elastic modulus of 0.1 GPa to 3 GPa at 200° C. The wiring board uses the heat-resistant resin film with the metal layer.

    2.
    发明专利
    未知

    公开(公告)号:DE60209594T2

    公开(公告)日:2006-08-10

    申请号:DE60209594

    申请日:2002-06-27

    Abstract: A resin composition has a phase separation structure having at least two phases and inorganic particles having a mean primary particle size of 0.1 mu m or less. The phase separation structure includes a matrix phase and a disperse phase. The inorganic particles are mainly present in any one of the matrix phase, the disperse phase, and the interface between the matrix phase and the disperse phase. The resin composition has a high thermal expansion coefficient and elastic modulus, and thus provides an adhesive for semiconductor devices which has excellent reflow resistance and adhesion.

    3.
    发明专利
    未知

    公开(公告)号:DE60209594D1

    公开(公告)日:2006-05-04

    申请号:DE60209594

    申请日:2002-06-27

    Abstract: A resin composition has a phase separation structure having at least two phases and inorganic particles having a mean primary particle size of 0.1 mu m or less. The phase separation structure includes a matrix phase and a disperse phase. The inorganic particles are mainly present in any one of the matrix phase, the disperse phase, and the interface between the matrix phase and the disperse phase. The resin composition has a high thermal expansion coefficient and elastic modulus, and thus provides an adhesive for semiconductor devices which has excellent reflow resistance and adhesion.

    4.
    发明专利
    未知

    公开(公告)号:AT319777T

    公开(公告)日:2006-03-15

    申请号:AT02014361

    申请日:2002-06-27

    Abstract: A resin composition has a phase separation structure having at least two phases and inorganic particles having a mean primary particle size of 0.1 mu m or less. The phase separation structure includes a matrix phase and a disperse phase. The inorganic particles are mainly present in any one of the matrix phase, the disperse phase, and the interface between the matrix phase and the disperse phase. The resin composition has a high thermal expansion coefficient and elastic modulus, and thus provides an adhesive for semiconductor devices which has excellent reflow resistance and adhesion.

    ADHESIVE MATERIAL FOR SEMICONDUCTOR DEVICE, RESIN-LINED METAL FOIL, AND WIRING BOARD

    公开(公告)号:JP2002338930A

    公开(公告)日:2002-11-27

    申请号:JP2001152407

    申请日:2001-05-22

    Abstract: PROBLEM TO BE SOLVED: To obtain an adhesive material for semiconductor devices wherewith a firm bond is established between a heat-resistant resin film and a metal foil without damaging the physical properties of the heat-resistant resin film and emitting lesser gas during heat treatment, to prepare a resin-lined metal foil, and to provide a wiring board using the resin-lined metal foil. SOLUTION: The adhesive material for semiconductor devices has a coating of a polyimide precursor mainly comprising an aromatic tetracarboxylic dianhydride and a diamine on at least one surface of the heat-resistant resin film, wherein the aromatic tetracarboxylic dianhydride contains a substance represented by formula [I]. In formula [I], R is an alkylene group being at least one selected from the structures of formulas [II] and [III]. In formulas [II] and [III], R and R are each a lower alkylene group or phenylene group, identical to each other or different from each other; R -R are each a lower alkyl group, phenyl group, or phenoxy group, identical to each other or different from each other; and (n) is an integer of not less than 1.

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