Abstract:
The present invention provides a heat-resistant resin film with a metal layer strongly bonded to the heat-resistant resin film without deteriorating the physical properties possessed by the heat-resistant resin film, and a wiring board using the heat-resistant resin film with the metal layer. The heat-resistant resin film with the metal layer includes a heat-resistant adhesive coated on at least one side of the heat-resistant resin film, and the metal layer provided on the heat-resistant adhesive by at least one of sputtering, vacuum evaporation, and plating. The heat-resistant adhesive has a glass transition temperature (Tg) of 60° C. to 250° C., generates 250 ppm or less of gases at 100° C. to 300° C., and has an elastic modulus of 0.1 GPa to 3 GPa at 200° C. The wiring board uses the heat-resistant resin film with the metal layer.
Abstract:
A resin composition has a phase separation structure having at least two phases and inorganic particles having a mean primary particle size of 0.1 mu m or less. The phase separation structure includes a matrix phase and a disperse phase. The inorganic particles are mainly present in any one of the matrix phase, the disperse phase, and the interface between the matrix phase and the disperse phase. The resin composition has a high thermal expansion coefficient and elastic modulus, and thus provides an adhesive for semiconductor devices which has excellent reflow resistance and adhesion.
Abstract:
A resin composition has a phase separation structure having at least two phases and inorganic particles having a mean primary particle size of 0.1 mu m or less. The phase separation structure includes a matrix phase and a disperse phase. The inorganic particles are mainly present in any one of the matrix phase, the disperse phase, and the interface between the matrix phase and the disperse phase. The resin composition has a high thermal expansion coefficient and elastic modulus, and thus provides an adhesive for semiconductor devices which has excellent reflow resistance and adhesion.
Abstract:
A resin composition has a phase separation structure having at least two phases and inorganic particles having a mean primary particle size of 0.1 mu m or less. The phase separation structure includes a matrix phase and a disperse phase. The inorganic particles are mainly present in any one of the matrix phase, the disperse phase, and the interface between the matrix phase and the disperse phase. The resin composition has a high thermal expansion coefficient and elastic modulus, and thus provides an adhesive for semiconductor devices which has excellent reflow resistance and adhesion.
Abstract:
A resin composition has a phase separation structure having at least two phases and inorganic particles having a mean primary particle size of 0.1 mu m or less. The phase separation structure includes a matrix phase and a disperse phase. The inorganic particles are mainly present in any one of the matrix phase, the disperse phase, and the interface between the matrix phase and the disperse phase. The resin composition has a high thermal expansion coefficient and elastic modulus, and thus provides an adhesive for semiconductor devices which has excellent reflow resistance and adhesion.
Abstract:
A heat-resistant resin film with a metal layer which has a heat-resistant resin film having at least one surface coated with a heat-resistant adhesive and a metal layer formed on the at least one surface, characterized in that the heat-resistant adhesive comprises a polyimide-based resin, the metal layer is provided by sputtering, vapor deposition or plating, and the heat-resistant adhesive has a transition temperature of 60 to 250˚C and a modulus of elasticity at 200˚C of 0.1 to 3 GPa, and generates a gas in the range of 100 to 300˚C in an amount of 250 ppm or less; and a wiring board using the heat-resistant resin film with a metal layer. The heat-resistant resin film with a metal layer exhibits firm adhesion of the heat-resistant resin film with the metal layer without to detriment to physical properties of the heat-resistant resin film.
Abstract:
PROBLEM TO BE SOLVED: To provide a resin composition which has an excellent low thermal expansion coefficient and an excellent high elastic modulus, and to provide an adhesive which has excellent reflow resistance and excellent adhesiveness and is used for semiconductors. SOLUTION: This resin composition is characterized by containing inorganic fine particles which have a structure having two or more separated phases and having an average primary particle diameter of
Abstract:
PROBLEM TO BE SOLVED: To obtain an adhesive material for semiconductor devices wherewith a firm bond is established between a heat-resistant resin film and a metal foil without damaging the physical properties of the heat-resistant resin film and emitting lesser gas during heat treatment, to prepare a resin-lined metal foil, and to provide a wiring board using the resin-lined metal foil. SOLUTION: The adhesive material for semiconductor devices has a coating of a polyimide precursor mainly comprising an aromatic tetracarboxylic dianhydride and a diamine on at least one surface of the heat-resistant resin film, wherein the aromatic tetracarboxylic dianhydride contains a substance represented by formula [I]. In formula [I], R is an alkylene group being at least one selected from the structures of formulas [II] and [III]. In formulas [II] and [III], R and R are each a lower alkylene group or phenylene group, identical to each other or different from each other; R -R are each a lower alkyl group, phenyl group, or phenoxy group, identical to each other or different from each other; and (n) is an integer of not less than 1.
Abstract:
PROBLEM TO BE SOLVED: To provide a tape for TAB the warp of which is a little and the working property of which is superior, and to provide a semiconductor device using the same. SOLUTION: The tape with adhesives for semiconductor devices is a laminate tape having at least an adhesive layer on an organic insulative film. The content of phenol remaining in the adhesive layer is 5 wt.% or less.
Abstract:
PROBLEM TO BE SOLVED: To provide a tape for TAB that has a small amount of warpage and superior machining characteristics, and a semiconductor device using the tape. SOLUTION: This adhesive sheet for semiconductor deices has a laminate comprising at least one protection fm layer and an adhesive layer. In this case, the adhesive layer should contain a compound having an oxetane ring.