公开(公告)号：JP2007024588A

公开(公告)日：2007-02-01

申请号：JP2005204612

申请日：2005-07-13

Applicant: Toshiba Corp ,  Toshiba Electron Tubes & Devices Co Ltd ,  東芝電子管デバイス株式会社 ,  株式会社東芝

Inventor： IKEDA MITSUSHI ,  ATSUTA MASAKI ,  AIDA HIROYUKI ,  HONMA KATSUHISA

IPC: G01T1/24 ,  H01L27/14 ,  H01L31/09 ,  H04N5/32

Abstract: PROBLEM TO BE SOLVED: To prevent the occurrence of a residual image, deficient resolution, or a large dark current.
SOLUTION: This X-ray plane detector includes an X-ray electric charge conversion film for converting incoming X rays into electric charge, and a pixel electrode and a common electrode provided on both surfaces of the conversion film. The conversion film is of a halide of any of Pb, Hg, Tl, Bi, Cd, In, Sb, or Sn, with oxygen and hydrogen added thereto.
COPYRIGHT: (C)2007,JPO&INPIT

Abstract translation: 要解决的问题：为了防止残留图像的发生，分辨率不足或大的暗电流。 解决方案：该X射线平面检测器包括用于将入射X射线转换为电荷的X射线电荷转换膜，以及设置在转换膜的两个表面上的像素电极和公共电极。 转化膜是Pb，Hg，Tl，Bi，Cd，In，Sb或Sn中的任一种的卤化物，其中加入氧和氢。 版权所有（C）2007，JPO＆INPIT

公开(公告)号：JP2005260263A

公开(公告)日：2005-09-22

申请号：JP2005120383

申请日：2005-04-18

Applicant: Toshiba Corp ,  株式会社東芝

Inventor： TANAKA MANABU ,  IKEDA MITSUSHI ,  ATSUTA MASAKI ,  KONNO AKIRA ,  SUZUKI KOHEI ,  KAMIURA NORIHIKO

IPC: H01L27/146 ,  H01L27/14 ,  H01L31/09 ,  H04N5/32

Abstract: PROBLEM TO BE SOLVED: To provide an imaging apparatus in which a TFT defect caused by static electricity does not occur, and a point defect and a line defect in a detection image are not caused. SOLUTION: The apparatus comprises a first region formed with a plurality of pixel electrodes formed in a matrix shape, signal lines connected to each pixel electrode, switching devices which open and close each pixel electrode and signal lines, and scanning lines which send driving signals to the switching devices; of a second region which is arranged adjacent to the outside of the first region, and both ends of the signal line and the both ends of the scanning line are arranged; of auxiliary wiring arranged in the second region; and of an electrostatic discharge means which is inserted between the signal line of the second region and the auxiliary wire, and between the scanning line and the auxiliary wire, and when the electric potential between the signal line and the scanning line is at least a given value, short-circuits them, and makes the signal line and the scanning line equal potential. COPYRIGHT: (C)2005,JPO&NCIPI

Abstract translation: 要解决的问题：提供一种不会产生由静电引起的TFT缺陷并且不会引起点缺陷和检测图像中的线缺陷的成像装置。 解决方案：该装置包括形成有矩阵形状的多个像素电极的第一区域，连接到每个像素电极的信号线，打开和关闭每个像素电极和信号线的开关装置，以及发送 驱动信号到开关装置; 布置成与第一区域的外侧相邻的第二区域，并且布置信号线的两端和扫描线的两端; 布置在所述第二区域中的辅助布线; 以及插入在第二区域的信号线和辅助线之间以及扫描线和辅助线之间的静电放电装置，并且当信号线和扫描线之间的电位至少为给定 值，使它们短路，并使信号线和扫描线相等。 版权所有（C）2005，JPO＆NCIPI

公开(公告)号：JP2005064150A

公开(公告)日：2005-03-10

申请号：JP2003290808

申请日：2003-08-08

Applicant: Toshiba Corp ,  株式会社東芝

Inventor： ATSUTA MASAKI ,  IKEDA MITSUSHI

IPC: G01T1/24 ,  H01L27/14 ,  H01L27/146 ,  H01L31/09 ,  H04N5/32

Abstract: PROBLEM TO BE SOLVED: To provide an X-ray plane detector which takes out an electric charge by X-ray with a lower impressing voltage with a reduced effect to the environment.
SOLUTION: The X-ray plane detector is equipped with an X-ray electric charge conversion film, a pixel electrode and a common electrode, both of which are provided so as to be contacted with both sides of the X-ray electric charge conversion film. The X-ray electric charge conversion film is the compound of lanthanoid selected from La, Ce, Pr, Nd, Pm, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb and Lu, iodine, bromine and chlorine.
COPYRIGHT: (C)2005,JPO&NCIPI

Abstract translation: 要解决的问题：提供一种X射线平面检测器，其以较低的施加电压通过X射线取出电荷，对环境的影响降低。 解决方案：X射线平面检测器配备有X射线电荷转换膜，像素电极和公共电极，它们都被设置成与X射线电极的两侧接触 电荷转换膜。 X射线电荷转换膜是选自La，Ce，Pr，Nd，Pm，Sm，Eu，Gd，Tb，Dy，Ho，Er，Tm，Yb和Lu，碘，溴和氯的镧系元素的化合物 。 版权所有（C）2005，JPO＆NCIPI

公开(公告)号：JPH11274444A

公开(公告)日：1999-10-08

申请号：JP7080498

申请日：1998-03-19

Applicant: Toshiba Corp ,  株式会社東芝

Inventor： IKEDA MITSUSHI ,  ATSUTA MASAKI ,  TANAKA MANABU ,  KONNO AKIRA ,  SUZUKI KOHEI

IPC: G01T1/24 ,  H01L27/14

Abstract: PROBLEM TO BE SOLVED: To assure sufficient dynamic range even with lower X-ray intensity, by suppressing leak current of a TFT(thin-film transistor).
SOLUTION: An X-ray electric-charge transfer film 2 which transfers an X-ray incident on a detection part comprising pixels arrayed in plural numbers into an electric charge, a storage capacity 3 where, provided corresponding to each pixel, the electric charges transferred at the X-ray electric-charge transfer film 2 are accumulated, and an amorphous silicon film transistor 1 which, provided corresponding to the storage capacity 3, reads the electric charges accumulated at the storage capacity 3, are provided. Here, a semiconductor of at least one of a source region, drain region, or channel formation region of the thin-film transistor 1 contains specified impurities with a wider band gap compared with the case of no specified impurities contained.
COPYRIGHT: (C)1999,JPO

Abstract translation: 要解决的问题：通过抑制TFT（薄膜晶体管）的漏电流，即使在较低的X射线强度下也能确保足够的动态范围。 解决方案：一种X射线电荷转移膜2，其将入射到包括多个排列的像素的检测部分的X射线转换成电荷，存储电容3，其中对应于每个像素提供转移的电荷 堆积X射线电荷转移膜2，并且提供对应于存储容量3读取在存储容量3积累的电荷的非晶硅膜晶体管1。 这里，与没有规定的杂质的情况相比，薄膜晶体管1的源极区域，漏极区域或沟道形成区域中的至少一个的半导体具有更宽的带隙的特定杂质。

公开(公告)号：JPH09311344A

公开(公告)日：1997-12-02

申请号：JP6130097

申请日：1997-03-14

Applicant: TOSHIBA CORP

Inventor： IIDA ATSUKO ,  KONNO AKIRA ,  SAITO MASAYUKI ,  MORI MIKI ,  FUKUDA YUMI ,  UCHIDA TATSUAKI ,  MIYAGI TAKESHI ,  KIZAKI YUKIO ,  ATSUTA MASAKI

IPC: G02F1/1339 ,  G02F1/13 ,  G02F1/133 ,  G02F1/1345 ,  G02F1/1347 ,  G09F9/30

Abstract: PROBLEM TO BE SOLVED: To utterly eliminate existence of a non-display area on a display screen or to make it minimum by arranging plural array substrates so that display areas of respective array substrate edge parts face to both surfaces of a counter substrate on whose both surfaces common electrodes arc respectively formed with each other across the counter substrate. SOLUTION: This device is provided with a counter substrate 23 in which common electrodes 22 are respectively formed on both surface of a translucent substrate 21 and plural array substrates 26a, 26b in which semiconductor elements and signal lines 25 are formed on a translucent substrate 24. Respective array substrates 26a, 26b are arranged so that display areas of respective substrate edge parts face to both surfaces of the counter substrate 23 with each other across the substrate 23. In short, respective array substrates 26a 26b are arranged in an adjacent relation so that one parts of the display areas of the array substrate edge parts are overlapped with each other across the counter substrate 23 while being faced to the both surfaces of the counter substrate 23. Liquid crystals 29a, 29b are sealed in spaces among the counter substrate 23 and respective array substrates 26a, 26b.

公开(公告)号：JPH023974A

公开(公告)日：1990-01-09

申请号：JP15282688

申请日：1988-06-21

Applicant: TOSHIBA CORP

Inventor： ATSUTA MASAKI ,  OGURA TSUNEO

IPC: H01L29/744 ,  H01L29/74 ,  H03K17/73 ,  H03K17/732

Abstract: PURPOSE:To enable a double-gate GTO to be turned OFF quickly with low power consumption, by applying a gate pulse to a first gate electrode prior to applying a gate pulse to a second gate while setting gate current to be equal to or higher than the central junction current. CONSTITUTION:A second gate pulse generator 5 has a built-in off-gate pulse delay circuit. When it is turned ON, a negative first gate pulse S2 and a positive second gate pulse S3 are applied thereto simultaneously. When it is turned OFF, a positive first gate pulse S2 is applied to a gate 17 first and then a negative second gate pulse S3 is applied to a gate 18 with a delay of certain period of time. The gate current as obtained by the pulses S2 and S3 in the OFF state is set to be equal to or higher than the central junction current in that state. In this manner, a period of time required for lowering the central junction current is shortened substantially, power loss is decreased and switching speed is increased.

公开(公告)号：JP2013190580A

公开(公告)日：2013-09-26

申请号：JP2012056348

申请日：2012-03-13

Applicant: Toshiba Corp ,  株式会社東芝 ,  Japan Display Central Co Ltd ,  株式会社ジャパンディスプレイセントラル

Inventor： ATSUTA MASAKI ,  HASEGAWA TSUTOMU ,  NAGATO KAZUSHI ,  MIYAZAKI TAKASHI ,  SUZUKI KOJI

IPC: G02F1/1335 ,  G02F1/1333

Abstract: PROBLEM TO BE SOLVED: To provide a liquid crystal display device excellent in reliability and efficiency for light utilization.SOLUTION: According to the embodiment, a liquid crystal display device includes a Fabry-Perot type interference filter having a first reflective layer, a second reflective layer, and a spacer layer disposed between the first reflective layer and the second reflective layer. The spacer layer has a first area in which at least a first layer, a second layer and a third layer are laminated, a second area in which the second layer and the third layer are laminated, and a third area in which the third layer is provided. The spacer layer further has a protective film provided at at least either one of a position between the first layer and the second layer and a position between the second layer and the third layer.

Abstract translation: 要解决的问题：提供一种液晶显示装置，其光可靠性和效率优异。解决方案：根据实施例，液晶显示装置包括具有第一反射层和第二反射层的法布里 - 珀罗型干涉滤光器 层和设置在第一反射层和第二反射层之间的间隔层。 间隔层具有层叠有至少第一层，第二层和第三层的第一区域，层叠有第二层和第三层的第二区域和第三区域，其中第三层为 提供。 间隔层还具有设置在第一层和第二层之间的位置和第二层与第三层之间的位置中的至少一个中的保护膜。

公开(公告)号：JP2012058212A

公开(公告)日：2012-03-22

申请号：JP2010204798

申请日：2010-09-13

Applicant: Toshiba Corp ,  株式会社東芝

Inventor： ATSUTA MASAKI ,  FUNAKI HIDEYUKI ,  SASAKI KEITA

IPC: G01J1/02 ,  H01L27/14

CPC classification number: G01J5/10 ,  G01J5/02 ,  G01J5/0225 ,  G01J5/023 ,  G01J5/024 ,  G01J5/08 ,  G01J5/0853 ,  G01J5/20

Abstract: PROBLEM TO BE SOLVED: To provide an infrared detection element that reduces heat capacity and is made high in reliability and low-cost without lowering infrared sensor sensitivity.SOLUTION: The infrared detection element can prevent decreasing in infrared absorption quantity by reducing the heat capacity of a heat sensing unit by forming a through hole in a shape whose upper part spreads in a heat absorber layer.

Abstract translation: 要解决的问题：提供一种降低热容量的红外线检测元件，并且在不降低红外传感器灵敏度的情况下，可靠性高，成本低廉。 解决方案：红外线检测元件可以通过以上部扩散在吸热层中的形状形成通孔来降低热敏单元的热容量来防止红外吸收量的降低。 版权所有（C）2012，JPO＆INPIT

公开(公告)号：JP2009231715A

公开(公告)日：2009-10-08

申请号：JP2008077856

申请日：2008-03-25

Applicant: Toshiba Corp ,  株式会社東芝

Inventor： ATSUTA MASAKI ,  HARA YUJIRO ,  NAKAO HIDEYUKI

IPC: H01L31/09 ,  G01T1/24 ,  G01T7/00 ,  H01L27/14

CPC classification number: G01T1/249 ,  G01T1/247

Abstract: PROBLEM TO BE SOLVED: To improve a spatial resolution in a direct conversion type X-ray detector. SOLUTION: The X-ray detector comprises a semiconductor substrate, a plurality of pixel electrodes arranged in a matrix shape on the X-ray irradiation surface side of the semiconductor substrate, and a flat plate-like electrode provided on the plane facing the X-ray irradiation surface of the semiconductor substrate. COPYRIGHT: (C)2010,JPO&INPIT

Abstract translation: 要解决的问题：提高直接转换型X射线检测器中的空间分辨率。 解决方案：X射线检测器包括半导体衬底，在半导体衬底的X射线照射表面侧上以矩阵形状布置的多个像素电极，以及设置在半导体衬底的平面上的平板状电极 半导体衬底的X射线照射表面。 版权所有（C）2010，JPO＆INPIT

公开(公告)号：JPH08153722A

公开(公告)日：1996-06-11

申请号：JP25325995

申请日：1995-09-29

Applicant: TOSHIBA CORP

Inventor： IKEDA MITSUSHI ,  TSUJI YOSHIKO ,  OGAWA YOSHIFUMI ,  ATSUTA MASAKI ,  HARA YUJIRO ,  OKA TOSHIYUKI ,  TAKEMURA MOMOKO

IPC: G02F1/1343 ,  H01L21/28 ,  H01L21/285 ,  H01L21/3205 ,  H01L23/52 ,  H01L29/786

Abstract: PURPOSE: To provide a low resistivity and to facilitate handling by making Mo and/or W the major component and by adding an element selected from Ar, Kr and Xe. CONSTITUTION: A gate electrode 1 formed on a glass board 101 is made to have Mo and/or W as major component, and the ratio of the lattice constant of the material of the gate electrode 1 to the lattice constant of the material in bulk condition is be within ±3%. An element selected from Ar, Kr and Xe is added to the metal of the major component. In such case, Ar is set at 0.0003 atom %-5 atom %, Kr is set at 0.0003 atom %-3 atom % and Xe is set at 0.0003 atom % to 3 atom %. The content of the major component, Mo and/or W, is preferably 10 atom %-95 atom %. Thus, a low resistivity is obtained and handling is facilitated.