公开(公告)号：US20160306275A1

公开(公告)日：2016-10-20

申请号：US14991828

申请日：2016-01-08

Applicant: Samsung Display Co., Ltd.

Inventor： Seung-Won PARK ,  Dae-Hwan JANG ,  Min-Uk KIM ,  Jung-Gun NAM ,  Dae-Young LEE ,  Gug-Rae JO

IPC: G03F7/00

CPC classification number: G03F7/0002 ,  B81C2201/015

Abstract: An exemplary embodiment discloses an imprint lithography method including: forming a first imprint pattern on a base substrate in a first area; forming a first resist pattern on the base substrate in a second area, the second area partially overlapping the first area; etching a third area using the first imprint pattern and the first resist pattern as an etch barrier, wherein the third area is a portion of the first area that is not overlapped with the second area; removing the first imprint pattern and the first resist pattern; forming a second imprint pattern on the base substrate in a fourth area which overlaps the second area and partially overlaps the third area; forming a second resist pattern on the base substrate in the third area; and etching the second area using the second imprint pattern and the second resist pattern as an etch barrier.

Abstract translation: 一个示例性实施例公开了一种压印光刻方法，包括：在第一区域中的基底基板上形成第一印记图案; 在第二区域中在基底基板上形成第一抗蚀剂图案，第二区域部分地与第一区域重叠; 使用所述第一印记图案和所述第一抗蚀剂图案蚀刻第三区域作为蚀刻阻挡层，其中所述第三区域是所述第一区域的与所述第二区域不重叠的部分; 去除所述第一印记图案和所述第一抗蚀剂图案; 在与所述第二区域重叠并与所述第三区域部分重叠的第四区域中的所述基底基板上形成第二印记图案; 在所述第三区域中的所述基底基板上形成第二抗蚀剂图案; 以及使用所述第二印记图案和所述第二抗蚀剂图案作为蚀刻屏障来蚀刻所述第二区域。

公开(公告)号：US09989845B2

公开(公告)日：2018-06-05

申请号：US14991828

申请日：2016-01-08

Applicant: Samsung Display Co., Ltd.

Inventor： Seung-Won Park ,  Dae-Hwan Jang ,  Min-Uk Kim ,  Jung-Gun Nam ,  Dae-Young Lee ,  Gug-Rae Jo

IPC: C03C15/00 ,  G03F7/00

CPC classification number: G03F7/0002 ,  B81C2201/015

Abstract: An exemplary embodiment discloses an imprint lithography method including: forming a first imprint pattern on a base substrate in a first area; forming a first resist pattern on the base substrate in a second area, the second area partially overlapping the first area; etching a third area using the first imprint pattern and the first resist pattern as an etch barrier, wherein the third area is a portion of the first area that is not overlapped with the second area; removing the first imprint pattern and the first resist pattern; forming a second imprint pattern on the base substrate in a fourth area which overlaps the second area and partially overlaps the third area; forming a second resist pattern on the base substrate in the third area; and etching the second area using the second imprint pattern and the second resist pattern as an etch barrier.

公开(公告)号：US11759782B2

公开(公告)日：2023-09-19

申请号：US16627373

申请日：2018-06-25

Applicant: Teknologian tutkimuskeskus VTT Oy

Inventor： Tiina Maaninen ,  Annukka Kokkonen ,  Marika Kurkinen ,  Sanna Aikio

IPC: B01L3/00 ,  B81B1/00 ,  B81C1/00

CPC classification number: B01L3/502746 ,  B01L3/502707 ,  B81B1/006 ,  B81C1/00119 ,  B01L2200/0605 ,  B01L2200/12 ,  B01L2300/069 ,  B01L2300/0864 ,  B01L2300/0887 ,  B01L2300/123 ,  B01L2300/165 ,  B01L2400/0406 ,  B01L2400/0481 ,  B01L2400/0688 ,  B81B2201/05 ,  B81B2203/0338 ,  B81C2201/015 ,  B81C2203/03

Abstract: A novel microfluidic chip is proposed for performing a chemical or biochemical test in a metered reaction volume. The microfluidic chip has a body which defines an inner flow volume. An inlet has been provided to the body for connecting the inner flow volume to the ambient space. A waste channel forms part of the inner flow volume and is in fluid communication with the inlet. A sample channel also forms part of the inner flow volume and is in fluid communication with the inlet. The sample channel includes a first hydrophobic stop and a second hydrophobic stop at a distance from the first hydrophobic stop so as to provide a metered reaction volume there between. An expelling channel is in fluid communication with the metered reaction volume of the sample channel through the first hydrophobic stop. A sample reservoir is in fluid communication with the metered reaction volume of the sample channel through the second hydrophobic stop.

公开(公告)号：KR1020160101311A

公开(公告)日：2016-08-25

申请号：KR1020150023559

申请日：2015-02-16

Applicant: 한국전자통신연구원

Inventor： 이봉국 ,  유한영 ,  김약연 ,  백인복 ,  윤용선 ,  이병준 ,  장원익

IPC: B81C1/00 ,  B82B3/00

CPC classification number: B81C1/00079 ,  B81C1/0046 ,  B81C1/00714 ,  B81C2201/015 ,  B82B3/0019 ,  B82B3/0095

Abstract: 본발명의실시예에따른마이크로-나노계층구조형성방법은몰드-기반리소그래피를이용하여마이크로구조체를형성하는단계; 및대기압플라즈마에칭을이용하여상기마이크로구조체표면에나노구조체를형성하는단계를포함할수 있다.

Abstract translation: 根据本发明的一个实施方案，形成微纳米级结构的方法包括：使用基于模具的光刻形成微结构的步骤; 以及使用大气压等离子体蚀刻法在微结构体的表面上形成纳米结构的工序。 本发明的目的是提供一种形成微纳米级结构的方法，使得微纳米层次结构具有大的面积。

公开(公告)号：KR1020110078323A

公开(公告)日：2011-07-07

申请号：KR1020090135102

申请日：2009-12-31

Applicant: 엘지디스플레이 주식회사

Inventor： 김주혁

IPC: C08K5/01 ,  C08K5/16 ,  B29C33/38

CPC classification number: C08K5/07 ,  B81C2201/015 ,  C08K5/14 ,  C08K5/29 ,  C08L33/06 ,  C08L83/04

Abstract: PURPOSE: An imprint resistor solution is provided to facilitate the separation of a mold for imprint as gas is created from a gas generation agent, thereby simplifying a process since a surface treatment process of the mold for imprint is unnecessary. CONSTITUTION: An imprint resistor solution comprises 85~97 wt% of liquid polymer precursors, 1~5 wt% thermal initiator, 1~5 wt% photoinitiator, and 1~5wt% of gas generation agents generating gas in the separation of a mold for imprint and a substrate. The gas generation agent includes a ketone compound or an isocyanate compound. The ketone compound is obtained from hydrocarbon compounds including a carbonyl group less than carbon number 10. The isocyanate compound is obtained from methylene diphenyl diisocyanate, toluene diisocyanate, hexamethylene diisocyanate, or isophorone diisocyanate.

Abstract translation: 目的：提供压印电阻溶液，以便气体从气体发生剂产生时用于印模分离，从而简化了一种方法，因为不需要用于印模的表面处理过程。 构成：压印电阻溶液包含85〜97重量％的液体聚合物前体，1〜5重量％的热引发剂，1〜5重量％的光引发剂和1〜5重量％的气体发生剂在分离模具中产生气体 印记和底物。 气体发生剂包括酮化合物或异氰酸酯化合物。 酮化合物由碳数小于碳数10的羰基烃化合物得到。异氰酸酯化合物由亚甲基二苯基二异氰酸酯，甲苯二异氰酸酯，六亚甲基二异氰酸酯或异佛尔酮二异氰酸酯得到。