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公开(公告)号：KR1020150020008A
公开(公告)日：2015-02-25
申请号：KR1020140015713
申请日：2014-02-11
Applicant: 한국전자통신연구원
Abstract: 진동 디바이스와 관련된다. 진동 디바이스는 진동이 가능하고 광 도파로 기능을 하는 적어도 하나의 진동자와, 진동자를 진동시키는 전기장 공급부와, 진동자에 광을 입력하는 광 입력부, 및 전기장 공급부에 의해 진동자가 진동할 때 광 도파로를 거쳐 출사되는 광량 변화를 감지하는 광 감지부를 포함한다.
Abstract translation: 本发明涉及一种振动装置，更具体地说，涉及一种基于光学传感器的振动装置。 根据本发明，光传感器可以检测随着光波导特性振动的振动器振动的光波导特性的变化。 振动装置包括：至少一个振动器，其能够振动并用作光波导; 振动器的电场供给单元; 光输入单元，其将光输入到振动器中; 以及光检测单元，其检测当所述电场供应单元振动所述振动器时通过所述光波导发射的辐射的强度的变化。
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公开(公告)号：KR101111669B1
公开(公告)日：2012-02-14
申请号：KR1020080130969
申请日：2008-12-22
Applicant: 한국전자통신연구원
Abstract: 본 발명은 검출 장치에 관한 것이다. 본 발명의 검출 장치는 검출 물질과 반응하여 저항 변화를 발생하는 저항성 반응부, 상기 저항 변화에 따라 비선형적 특성을 갖는 전류 신호를 생성하는 검출 신호 생성부, 및 상기 전류 신호를 검출하는 신호 검출부를 포함하고, 상기 저항성 반응부와 상기 검출 신호 생성부는 병렬 연결된다.
검출 장치, 저항, 기준 저항, 다이오드, 비선형, 고감도-
公开(公告)号：KR1020100065032A
公开(公告)日：2010-06-15
申请号：KR1020090027383
申请日：2009-03-31
Applicant: 한국전자통신연구원
IPC: G01N33/50 , G01N33/72 , G01N33/563
Abstract: PURPOSE: A bio sensor and a method for detecting bio molecules are provided to electrochemically detect a target molecules having small molecular weight. CONSTITUTION: A bio sensor for detecting a target molecule comprises: a sensing unit on which target molecules for detecting on the surface; and a fluid channel for supplying analysis solution containing the probe molecules to a target molecules. The probe molecules specifically bind to target molecules. The probe molecules have larger charge than the target molecules.
Abstract translation: 目的：提供生物传感器和检测生物分子的方法，以电化学检测分子量小的靶分子。 构成：用于检测靶分子的生物传感器包括：感测单元，其上用于在表面上检测的目标分子; 以及用于将含有探针分子的分析溶液供应给靶分子的流体通道。 探针分子特异性结合靶分子。 探针分子具有比靶分子更大的电荷。
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公开(公告)号：KR1020100052631A
公开(公告)日：2010-05-20
申请号：KR1020080111433
申请日：2008-11-11
Applicant: 한국전자통신연구원
CPC classification number: G01N33/54353 , C12Q1/6834 , G01N33/551 , B82Y5/00
Abstract: PURPOSE: A method for fixing an active material on the substrate surface is provided to reproductively form monomolecular film of uniform silane comound in high density. CONSTITUTION: A method for fixing an active material on the substrate surface comprises: a step of cleaning the substrate; a step of modifying the surface with hydroxyl group; a step of modifying the surface using steam of organic silane compound; a step of fixing the active material on the surface end; a step of immersing the substrate in acetone; a step of immersing substrate in methanol; a step of immersing the substrate in mixture solution of sulfuric acid and hydrogen peroxide; and a step of immersing the substrate in mixture of hydrofluoric acid and ammonium fluoride.
Abstract translation: 目的：提供一种将活性材料固定在基材表面上的方法，以高密度再生形成均匀硅烷化合物的单分子膜。 构成：将活性物质固定在基材表面上的方法包括：清洗基材的步骤; 用羟基改性表面的步骤; 使用有机硅烷化合物的蒸汽改性表面的步骤; 将活性物质固定在表面端上的步骤; 将基材浸入丙酮中的步骤; 将底物浸入甲醇中的步骤; 将基板浸入硫酸和过氧化氢的混合溶液中的步骤; 以及将基板浸入氢氟酸和氟化铵的混合物中的步骤。
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Patent Agency Ranking
公开(公告)号：KR1020100019059A
公开(公告)日：2010-02-18
申请号：KR1020080077893
申请日：2008-08-08
Applicant: 한국전자통신연구원
CPC classification number: G01N27/4145
Abstract: PURPOSE: A method for measuring isoelectric point using FET and a measurement apparatus using the same are provided to measure the isoelectric point of material by calculating current variance difference on a current measurement part even without controlling the acidity of electrolyte solution. CONSTITUTION: A method for measuring isoelectric point comprises following steps. FET is provided. The electrolyte solution of the first concentration is provided to a channel region of FET and first current value flowing in the channel region between the drain electrode and source is measured(S20). The electrolyte solution of the second concentration which is higher than the first concentration is supplied and second current value flowing in the channel region between the drain electrode and the source is measured(S30). The FET or the isoelectric point of material on the FET is decided by using the difference between the first and the second current value(S70).
Abstract translation: 目的：使用FET测量等电点的方法和使用该方法的测量装置，通过计算电流测量部分上的电流方差差来测量材料的等电点，即使不控制电解质溶液的酸度。 构成：测量等电点的方法包括以下步骤。 提供FET。 将第一浓度的电解液提供给FET的沟道区域，并测量在漏极和源极之间的沟道区域中流动的第一电流值（S20）。 提供高于第一浓度的第二浓度的电解液，并测量在漏极和源极之间的沟道区域中流动的第二电流值（S30）。 通过使用第一和第二电流值之间的差来确定FET上的FET或等离子体电位点（S70）。
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公开(公告)号：KR1020090060635A
公开(公告)日：2009-06-15
申请号：KR1020070127521
申请日：2007-12-10
Applicant: 한국전자통신연구원
Abstract: A bio sensor which detects bio material through interaction between target molecule and probe molecule is provided to minimize the sensitivity to the difference of pH concentration and salt concentration and improve detection accuracy. A bio sensor comprises: a photo diode which contains a P-type doping layer(440), N-type doping layer(450) and non-doping area; an electrode which is formed at the both ends of P-type doping layer and N-type doping layer; and a probe molecule(P) which is fixed at the upper side of non-doping area. A method for manufacturing the bio sensor comprises: a step of forming photo diode containing the P-type doping layer, N-type doping layer and non-doping area; a step of forming electrode at the both ends of the P-type doping layer and N-type doping layer; a step of fixing the probe molecule at the upper side of the non-doping area; and a step of injecting target molecule into a sample.
Abstract translation: 提供通过靶分子和探针分子之间的相互作用检测生物材料的生物传感器，以最小化对pH浓度和盐浓度的差异的敏感性，并提高检测精度。 生物传感器包括：光电二极管，其包含P型掺杂层（440），N型掺杂层（450）和非掺杂区域; 在P型掺杂层和N型掺杂层的两端形成的电极; 以及固定在非掺杂区域的上侧的探针分子（P）。 一种用于制造生物传感器的方法，包括：形成含有P型掺杂层，N型掺杂层和非掺杂区的光电二极管的步骤; 在P型掺杂层和N型掺杂层的两端形成电极的步骤; 将探针分子固定在非掺杂区域的上侧的步骤; 以及将靶分子注入样品的步骤。
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公开(公告)号：KR100758285B1
公开(公告)日：2007-09-12
申请号：KR1020060094397
申请日：2006-09-27
Applicant: 한국전자통신연구원
CPC classification number: G01N33/54366 , B01L3/502707 , B01L2200/12 , B01L2300/0636 , B01L2300/0645 , B01L2300/0887 , G01N35/085
Abstract: A bio sensor is provided to improve sensitivity of bio materials by adsorbing them with all four surfaces of a sensing part, and simultaneously detect various kinds of bio materials through flow of fluid containing various bio materials. A bio sensor(100) comprises a supporting part(110) having a fluid pathway(115A), and a sensing part(113) crossing over the fluid pathway and having reactant capable of reacting with bio materials injected through the fluid pathway on the surface, wherein the supporting part contains a substrate(111), an etching barrier layer(114) in the rear side of the substrate, and an insulating layer(112) in the upper side of the substrate; the sensing part has a dumbbell shape with a center part(113A) having smaller width and left and right parts(113B) having larger width which transfer the detected signal from the center part to electrodes(116) formed in both left and right part.
Abstract translation: 提供生物传感器，以通过将感光部件的所有四个表面吸附来提高生物材料的灵敏度，并通过含有各种生物材料的流体的流动同时检测各种生物材料。 生物传感器（100）包括具有流体通道（115A）的支撑部分（110）和与流体通道交叉的感测部分（113），并具有能够通过表面上的流体通道注入的生物材料反应的反应物 ，其中所述支撑部分包含衬底（111），在所述衬底的后侧中的蚀刻阻挡层（114）以及在所述衬底的上侧中的绝缘层（112）; 感测部具有哑铃形状，具有宽度较小的中心部分（113A），宽度大的左右部分（113B）将检测信号从中心部分转移到左右两部分形成的电极（116）。
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公开(公告)号：KR1020070059841A
公开(公告)日：2007-06-12
申请号：KR1020060044688
申请日：2006-05-18
Applicant: 한국전자통신연구원
IPC: H01L21/3105
CPC classification number: H01L21/02664 , H01L21/02129 , H01L21/02282 , H01L21/0337 , H01L21/324
Abstract: A method for planarizing a semiconductor substrate is provided to simplify a fabricating process as compared with a conventional CMP process by obtaining the same effect as that of a CMP process by an etch process like RIE(reactive ion etching) after a self-align mask material like HSQ(HydroSilesQuioxane) is formed on a semiconductor substrate having a step. A semiconductor substrate(210) is prepared in which at least one step(216) is formed. A self-aligned hard mask(510) is formed on the semiconductor substrate. The step exposed through the self-aligned mask is removed by an etch process. The self-aligned mask is removed. The etch process can be one of an RIE process, an MERIE(magnetically enhanced RIE) process, an ICP(inductively coupled plasma) process, a TCP(transformer coupled plasma) process or an ECR(electron cyclotron resonance) process, wherein CF4, SF6, Cl2 or HBr is used as etch gas.
Abstract translation: 提供了一种用于平面化半导体衬底的方法，以便通过在自对准掩模材料之后通过诸如RIE（反应离子蚀刻）之类的蚀刻工艺获得与CMP工艺相同的效果与常规CMP工艺相比简化制造工艺 类似于HSQ（HydroSilesQuioxane）形成在具有台阶的半导体衬底上。 制备其中形成至少一个步骤（216）的半导体衬底（210）。 在半导体衬底上形成自对准硬掩模（510）。 通过蚀刻工艺去除通过自对准掩模暴露的步骤。 去除自对准面罩。 蚀刻工艺可以是RIE工艺，MERIE（磁性增强型RIE）工艺，ICP（电感耦合等离子体）工艺，TCP（变压器耦合等离子体）工艺或ECR（电子回旋共振）工艺）之一，其中CF4， SF6，Cl2或HBr用作蚀刻气体。
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公开(公告)号：KR1020060028158A
公开(公告)日：2006-03-29
申请号：KR1020040077206
申请日：2004-09-24
Applicant: 한국전자통신연구원
IPC: H01L21/336 , H01L21/31 , H01L21/22 , H01L21/28
CPC classification number: H01L29/7835 , H01L29/41783 , H01L29/517 , H01L29/518 , H01L29/665 , H01L29/66659 , H01L29/7834
Abstract: 본 발명은 전계효과 트랜지스터 및 그 제조 방법에 관한 것으로, 측벽 스페이서(sidewall spacer) 형성 기술을 이용하고 박막의 증착 두께 조절을 통해 초미세 채널 길이를 가지는 전계효과 트랜지스터를 형성한다. 본 발명의 전계효과 트랜지스터는 소스와 드레인의 접합 깊이가 얕고, 소스와 게이트 그리고 드레인과 게이트의 중첩이 방지되어 기생저항이 낮다. 또한, 게이트 전계가 드레인 확장영역에 쉽게 유기되기 때문에 드레인측 채널에서의 캐리어 농도가 효과적으로 제어되며, 특히 드레인 확장영역이 소스 접합보다 얕게 형성되기 때문에 단채널 특성이 우수하다.
트랜지스터, 스페이서, 소스, 드레인, 확장영역, 기생저항
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