公开(公告)号：WO2021257689A1

公开(公告)日：2021-12-23

申请号：PCT/US2021/037607

申请日：2021-06-16

Applicant: AXCELIS TECHNOLOGIES, INC.

Inventor： SATOH, Shu ,  PLATOW, Wilhelm

IPC: H01J37/317 ,  H01J37/05 ,  H01J37/147 ,  H01J37/09 ,  H01J2237/045 ,  H01J2237/0451 ,  H01J2237/0458 ,  H01J2237/24585 ,  H01J2237/31701 ,  H01J37/141 ,  H01J37/1471 ,  H01J37/1474 ,  H01J37/153 ,  H01J37/21 ,  H01J37/3171

Abstract: An ion implantation system has an ion source configured to form an ion beam. A mass analyzer mass analyzes the ion beam, a scanning element scans the ion beam in a horizontal direction and a parallelizing lens translates the fanned-out scanned beam into parallel shifting scanning ion beam. For applications needing not only a mean incident angle, but highly-aligned ion incident angles and a tight angular distribution, a slit apparatus is positioned at horizontal and/or vertical front focal points of the parallelizing lens. Minimum horizontal and/or vertical angular distributions of the ion beam on the workpiece are attained by controlling a beam focusing lens upstream of the scanning element for the best beam transmission through the slit system.