公开(公告)号：WO2021034607A1

公开(公告)日：2021-02-25

申请号：PCT/US2020/046164

申请日：2020-08-13

Applicant: AXCELIS TECHNOLOGIES, INC.

Inventor： SATOH, Shu

IPC: H01J37/05 ,  H01J37/317

Abstract: Methods and a system of an ion implantation system are configured for increasing beam current above a maximum kinetic energy of a first charge state from an ion source without changing the charge state at the ion source. Ions having a first charge state are provided from an ion source and are selected into a first RF accelerator and accelerated in to a first energy. The ions are stripped to convert them to ions having various charge states. A charge selector receives the ions of various charge states and selects a final charge state at the first energy. A second RF accelerator accelerates the ions to final energy spectrum. A final energy filter filters the ions to provide the ions at a final charge state at a final energy to a workpiece.

公开(公告)号：WO2019055467A1

公开(公告)日：2019-03-21

申请号：PCT/US2018/050587

申请日：2018-09-12

Applicant: AXCELIS TECHNOLOGIES, INC.

Inventor： SATOH, Shu

IPC: H01J37/248 ,  H01J37/317 ,  H01J5/34 ,  H01J5/56

Abstract: An RF feedthrough has an electrically insulative cone that is hollow having first and second openings at first and second ends having first and second diameters. The first diameter is larger than the second diameter, defining a tapered sidewall of the cone to an inflection point. A stem is coupled to the second end of the cone, and passes through the first opening and second opening. A flange is coupled to the first end of the cone and has a flange opening having a third diameter. The third diameter is smaller than the first diameter. The stem passes through the flange opening without contacting the flange. The flange couples the cone to a chamber wall hole. Contact portions of the cone may be metallized. The cone and flange pass the stem through the hole while electrically insulating the stem from the wall of the chamber.

公开(公告)号：WO2010126470A1

公开(公告)日：2010-11-04

申请号：PCT/US2009/003265

申请日：2009-05-29

Applicant: AXCELIS TECHNOLOGIES, INC. ,  SATOH, Shu

Inventor： SATOH, Shu

IPC: H01J37/244 ,  H01J37/304 ,  H01J37/317

CPC classification number: H01J37/244 ,  H01J37/304 ,  H01J37/3171 ,  H01J2237/24405 ,  H01J2237/24507 ,  H01J2237/24564 ,  H01J2237/30405 ,  H01J2237/30455 ,  H01J2237/31703

Abstract: An ion implantation system (100) and associated method includes a scanner configured to scan a pencil shaped ion beam into a ribbon shaped ion beam (110), and a beam bending element (112) configured to receive the ribbon shaped ion beam having a first direction, and bend the ribbon shaped ion beam to travel in a second direction. The system further includes an end station positioned downstream of the beam bending element, wherein the end station (102) is configured to receive the ribbon shaped ion beam traveling in the second direction, and secure a workpiece (104) for implantation thereof. In addition, the system includes a beam current measurement system (122, 124, 106) located at an exit opening of the beam bending element that is configured to measure a beam current of the ribbon shaped ion beam at the exit opening of the beam bending element.

Abstract translation: 离子注入系统（100）和相关联的方法包括扫描器，其被配置为将铅笔形离子束扫描成带状离子束（110）;以及梁弯曲元件（112），其构造成接收带状离子束，其具有第一 方向，并且使带状离子束弯曲以在第二方向上行进。 所述系统还包括位于所述梁弯曲元件下游的终端站，其中所述端站（102）构造成接收沿所述第二方向行进的所述带状离子束，并且固定用于其植入的工件（104）。 另外，该系统包括位于梁弯曲元件的出口处的束电流测量系统（122,124,106），其被配置成测量在束弯曲的出口处的带状离子束的束流 元件。

公开(公告)号：WO2021257712A2

公开(公告)日：2021-12-23

申请号：PCT/US2021/037642

申请日：2021-06-16

Applicant: AXCELIS TECHNOLOGIES, INC.

Inventor： PLATOW, Wilhelm ,  BASSOM, Neil ,  SATOH, Shu ,  SILVERSTEIN, Paul ,  FARLEY, Marvin

IPC: H01J37/08 ,  H01J1/20 ,  H01J27/20 ,  H01J27/08 ,  H01J1/025 ,  H01J1/52 ,  H01J2201/19 ,  H01J2203/04 ,  H01J2237/08 ,  H01J2237/082

Abstract: An ion source for forming a plasma has a cathode with a cavity and a cathode surface defining a cathode step. A filament is disposed within the cavity, and a cathode shield has a cathode shield surface at least partially encircling the cathode surface. A cathode gap is defined between the cathode surface and the cathode shield surface, where the cathode gap defines a tortured path for limiting travel of the plasma through the gap. The cathode surface can have a stepped cylindrical surface defined by a first cathode diameter and a second cathode diameter, where the first cathode diameter and second cathode diameter differ from one another to define the cathode step. The stepped cylindrical surface can be an exterior surface or an interior surface. The first and second cathode diameters can be concentric or axially offset.

公开(公告)号：WO2016106427A1

公开(公告)日：2016-06-30

申请号：PCT/US2015/067734

申请日：2015-12-28

Applicant: AXCELIS TECHNOLOGIES, INC.

Inventor： SATOH, Shu

IPC: H01L21/67

CPC classification number: G01N29/34 ,  G01H13/00 ,  G01N29/09 ,  G01N29/12 ,  G01N29/2418 ,  G01N2291/014 ,  G01N2291/018 ,  G01N2291/028 ,  H01L21/67259 ,  H01L21/67288 ,  H01L21/6831 ,  H01L22/10

Abstract: A workpiece clamping status detection system and method for detecting a clamping state of a clamping device is provided. A clamping device having a clamping surface is configured to selectively clamp a workpiece to the clamping surface. The clamping device may be an electrostatic chuck or a mechanical clamp for selectively securing a semiconductor wafer thereto. A vibration-inducing mechanism is further provided, wherein the vibration-inducing mechanism is configured to selectively vibrate one or more of the clamping device and workpiece. A vibration-sensing mechanism is also provided, wherein the vibration-sensing mechanism is configured to detect the vibration of the one or more of the clamping device and workpiece. Detection of clamping status utilizes changes in acoustic properties, such as a shift of natural resonance frequency or acoustic impedance, to determine clamping condition of the workpiece. A controller is further configured to determine a clamping state associated with the clamping of the workpiece to the clamping surface, wherein the clamping state is associated with the detected vibration of the one or more of the clamping device and workpiece.

Abstract translation: 提供了用于检测夹紧装置的夹紧状态的工件夹紧状态检测系统和方法。 具有夹紧表面的夹紧装置构造成选择性地将工件夹紧到夹紧表面。 夹紧装置可以是用于将半导体晶片选择性地固定到其上的静电卡盘或机械夹具。 还提供了一种振动诱导机构，其中所述振动诱导机构构造成选择性地振动所述夹紧装置和工件中的一个或多个。 还提供了一种振动感测机构，其中所述振动感测机构构造成检测所述夹紧装置和所述工件中的一个或多个的振动。 夹紧状态的检测利用声学特性的变化，例如固有谐振频率或声阻抗的移动，以确定工件的夹紧状态。 控制器还被配置为确定与将工件夹紧到夹紧表面相关联的夹紧状态，其中夹紧状态与夹紧装置和工件中的一个或多个的检测到的振动相关联。

公开(公告)号：WO2023076492A1

公开(公告)日：2023-05-04

申请号：PCT/US2022/048051

申请日：2022-10-27

Applicant: AXCELIS TECHNOLOGIES, INC.

Inventor： PLATOW, Wilhelm ,  SATOH, Shu ,  BASSOM, Neil

IPC: H01J37/317 ,  H01J37/05

Abstract: An ion implantation systemlOO has an ion source 104 to generate an ion beam 108, and a mass analyzer 112 to define a first ion beam 114 having desired ions at a first charge state. A first linear accelerator 116 accelerates the first ion beam to a plurality of first energies. A charge stripper 118 strips electrons from the desired ions defining a second ion beam 120 at a plurality of second charge states. A first dipole magnet 124 spatially disperses and bends the second ion beam at a first angle 125. A charge defining aperture 126 passes a desired charge state of the second ion beam while blocking a remainder of the plurality of second charge states. A quadrupole apparatus 128 spatially focuses the second ion beam, defining a third ion beam 130. A second dipole magnet 132 bends the third ion beam at a second angle 133. A second linear accelerator 134 accelerates the third ion beam. A final energy magnet 136 bends the third ion beam at a third angle 137, and wherein an energy defining aperture 138 passes only the desired ions at a desired energy and charge state.

公开(公告)号：WO2015077400A1

公开(公告)日：2015-05-28

申请号：PCT/US2014/066516

申请日：2014-11-20

Applicant: AXCELIS TECHNOLOGIES, INC.

Inventor： SATOH, Shu

IPC: G01T1/34

CPC classification number: H01J37/3171 ,  H01J37/304 ,  H01J2237/24535 ,  H01J2237/24542 ,  H01J2237/30472

Abstract: An ion implantation system and method are provided where an ion source generates an ion and a mass analyzer mass analyzes the ion beam. A beam profiling apparatus translates through the ion beam along a profiling plane in a predetermined time, wherein the beam profiling apparatus measures the beam current across a width of the ion beam concurrent with the translation, therein defining a time and position dependent beam current profile of the ion beam. A beam monitoring apparatus is configured to measure the ion beam current at an edge of the ion beam over the predetermined time, therein defining a time dependent ion beam current, and a controller determines a time independent ion beam profile by dividing the time and position dependent beam current profile of the ion beam by the time dependent ion beam current, therein by cancelling fluctuations in ion beam current over the predetermined time.

Abstract translation: 提供离子注入系统和方法，其中离子源产生离子并且质量分析器质量分析离子束。 光束分析装置在预定时间内沿着成像平面翻转离子束，其中光束分布装置测量与平移同时的跨越离子束的宽度的束流，其中限定了时间和位置相关的束电流分布 离子束。 光束监测装置被配置为在预定时间内测量在离子束的边缘处的离子束电流，其中限定了时间依赖的离子束电流，并且控制器通过将时间和位置相关的分配来确定时间独立的离子束分布 离子束的束电流分布由时间依赖的离子束电流引入，其中通过在预定时间内消除离子束电流的波动。

公开(公告)号：WO2010008469A2

公开(公告)日：2010-01-21

申请号：PCT/US2009/003742

申请日：2009-06-23

Applicant: AXCELIS TECHNOLOGIES, INC. ,  SATOH, Shu ,  SIERADSKI, Manny ,  EISNER, Edward

Inventor： SATOH, Shu ,  SIERADSKI, Manny ,  EISNER, Edward

IPC: H01J27/02 ,  H01J27/00

CPC classification number: H01J37/05 ,  H01J37/304 ,  H01J37/3171 ,  H01J2237/006 ,  H01J2237/057 ,  H01J2237/24507 ,  H01J2237/24542 ,  H01J2237/24578 ,  H01J2237/31703

Abstract: An ion beam uniformity control system, wherein the uniformity control system comprising a differential pumping chamber that encloses an array of individually controlled gas jets, wherein the gas pressure of the individually controlled gas jets are powered by a controller to change the fraction of charge exchanged ions, and wherein the charge exchange reactions between the gas and ions change the fraction of the ions with original charge state of a broad ion beam, wherein the charge exchanged portion of the broad ion beam is removed utilizing an deflector that generates a magnetic field, a Faraday cup profiler for measuring the broad ion beam profile; and adjusting the individually controlled gas jets based upon feedback provided to the controller to obtain the desired broad ion beam.

Abstract translation: 一种离子束均匀性控制系统，其中所述均匀性控制系统包括包围独立控制的气体射流阵列的差分泵送室，其中单独控制的气体射流的气体压力由控制器供电以改变电荷交换离子的分数 并且其中气体和离子之间的电荷交换反应改变具有宽离子束的原始电荷状态的离子的分数，其中使用产生磁场的偏转器去除宽离子束的电荷交换部分， 用于测量宽离子束剖面的法拉第杯分析仪; 以及基于提供给控制器的反馈来调节单独控制的气体射流，以获得所需的宽离子束。

公开(公告)号：WO2021159045A1

公开(公告)日：2021-08-12

申请号：PCT/US2021/016996

申请日：2021-02-08

Applicant: AXCELIS TECHNOLOGIES, INC.

Inventor： JEN, Causon ,  SATOH, Shu ,  BONACORSI, Genise ,  BINTZ, William

IPC: H01J37/317 ,  H01J37/05

Abstract: A method for implanting high charge state ions into a workpiece while mitigating trace metal contamination includes generating desired ions at a first charge state from a desired species in an ion source, as well as generating trace metal ions of a contaminant species in a first ion beam. A charge-to-mass ratio of the desired ions and the trace metal ions is equal. The desired ions and trace metal ions are extracted from the ion source. At least one electron stripped from the desired ions to define a second ion beam of the desired ions at a second charge state and the trace metal ions. Only the desired ions from the second ion beam are selectively passed only through a charge selector to define a final ion beam of the desired ions at the second charge state and no trace metal ions, and the desired ions of the second charge state are implanted into a workpiece.

公开(公告)号：WO2015116784A1

公开(公告)日：2015-08-06

申请号：PCT/US2015/013456

申请日：2015-01-29

Applicant: AXCELIS TECHNOLOGIES, INC.

Inventor： SATOH, Shu

IPC: H01J37/08

CPC classification number: H01J37/304 ,  H01J37/3171 ,  H01J2237/24535 ,  H01J2237/30483

Abstract: A dosimetry system and method are provided for increasing utilization of an ion beam, wherein one or more side Faraday cups are positioned along a path of the ion beam and configured to sense a current thereof. The one or more side Faraday cups are separated by a distance associated with a diameter of the workpiece. The ion beam reciprocally scans across the workpiece, interlacing narrow scans and wide scans, wherein narrow scans are defined by reversing direction of the scanning near an edge of the workpiece, and wide scans are defined by reversing direction of the scanning at a position associated with an outboard region of the side Faraday cups.

Abstract translation: 提供了一种用于增加离子束利用率的剂量测定系统和方法，其中一个或多个侧法拉第杯沿着离子束的路径定位并被配置为感测其电流。 一个或多个侧法拉第杯分开与工件直径相关联的距离。 离子束往复扫描穿过工件，交织窄扫描和宽扫描，其中窄扫描是通过在工件边缘附近反转扫描方向来定义的，并且宽扫描是通过在与 侧法拉第杯的外侧区域。