公开(公告)号：WO2023076492A1

公开(公告)日：2023-05-04

申请号：PCT/US2022/048051

申请日：2022-10-27

Applicant: AXCELIS TECHNOLOGIES, INC.

Inventor： PLATOW, Wilhelm ,  SATOH, Shu ,  BASSOM, Neil

IPC: H01J37/317 ,  H01J37/05

Abstract: An ion implantation systemlOO has an ion source 104 to generate an ion beam 108, and a mass analyzer 112 to define a first ion beam 114 having desired ions at a first charge state. A first linear accelerator 116 accelerates the first ion beam to a plurality of first energies. A charge stripper 118 strips electrons from the desired ions defining a second ion beam 120 at a plurality of second charge states. A first dipole magnet 124 spatially disperses and bends the second ion beam at a first angle 125. A charge defining aperture 126 passes a desired charge state of the second ion beam while blocking a remainder of the plurality of second charge states. A quadrupole apparatus 128 spatially focuses the second ion beam, defining a third ion beam 130. A second dipole magnet 132 bends the third ion beam at a second angle 133. A second linear accelerator 134 accelerates the third ion beam. A final energy magnet 136 bends the third ion beam at a third angle 137, and wherein an energy defining aperture 138 passes only the desired ions at a desired energy and charge state.

公开(公告)号：WO2022240998A1

公开(公告)日：2022-11-17

申请号：PCT/US2022/028786

申请日：2022-05-11

Applicant: AXCELIS TECHNOLOGIES, INC.

Inventor： PLATOW, Wilhelm ,  SILVERSTEIN, Paul ,  BASSOM, Neil ,  FARLEY, Marvin ,  SPORLEDER, David

IPC: H01J37/08 ,  H01J37/317 ,  H01J27/08 ,  H01J2237/0807 ,  H01J27/024 ,  H01J37/3171

Abstract: An ion source has an arc chamber having first and second ends and an aperture plate to enclose a chamber volume. An extraction aperture is disposed between the first and second ends. A cathode is near the first end of the arc chamber, and a repeller is near the second end. A generally U-shaped first bias electrode is on a first side of the extraction aperture within the chamber volume. A generally U-shaped second bias electrode is on a second side of the extraction aperture within the chamber volume, where the first and second bias electrodes are separated by a first distance proximate to the extraction aperture and a second distance distal from the extraction aperture. An electrode power supply provides a first and second positive voltage to the first and second bias electrodes, where the first and second positive voltages differ by a predetermined bias differential.

公开(公告)号：WO2021257712A2

公开(公告)日：2021-12-23

申请号：PCT/US2021/037642

申请日：2021-06-16

Applicant: AXCELIS TECHNOLOGIES, INC.

Inventor： PLATOW, Wilhelm ,  BASSOM, Neil ,  SATOH, Shu ,  SILVERSTEIN, Paul ,  FARLEY, Marvin

IPC: H01J37/08 ,  H01J1/20 ,  H01J27/20 ,  H01J27/08 ,  H01J1/025 ,  H01J1/52 ,  H01J2201/19 ,  H01J2203/04 ,  H01J2237/08 ,  H01J2237/082

Abstract: An ion source for forming a plasma has a cathode with a cavity and a cathode surface defining a cathode step. A filament is disposed within the cavity, and a cathode shield has a cathode shield surface at least partially encircling the cathode surface. A cathode gap is defined between the cathode surface and the cathode shield surface, where the cathode gap defines a tortured path for limiting travel of the plasma through the gap. The cathode surface can have a stepped cylindrical surface defined by a first cathode diameter and a second cathode diameter, where the first cathode diameter and second cathode diameter differ from one another to define the cathode step. The stepped cylindrical surface can be an exterior surface or an interior surface. The first and second cathode diameters can be concentric or axially offset.

公开(公告)号：WO2021257689A1

公开(公告)日：2021-12-23

申请号：PCT/US2021/037607

申请日：2021-06-16

Applicant: AXCELIS TECHNOLOGIES, INC.

Inventor： SATOH, Shu ,  PLATOW, Wilhelm

IPC: H01J37/317 ,  H01J37/05 ,  H01J37/147 ,  H01J37/09 ,  H01J2237/045 ,  H01J2237/0451 ,  H01J2237/0458 ,  H01J2237/24585 ,  H01J2237/31701 ,  H01J37/141 ,  H01J37/1471 ,  H01J37/1474 ,  H01J37/153 ,  H01J37/21 ,  H01J37/3171

Abstract: An ion implantation system has an ion source configured to form an ion beam. A mass analyzer mass analyzes the ion beam, a scanning element scans the ion beam in a horizontal direction and a parallelizing lens translates the fanned-out scanned beam into parallel shifting scanning ion beam. For applications needing not only a mean incident angle, but highly-aligned ion incident angles and a tight angular distribution, a slit apparatus is positioned at horizontal and/or vertical front focal points of the parallelizing lens. Minimum horizontal and/or vertical angular distributions of the ion beam on the workpiece are attained by controlling a beam focusing lens upstream of the scanning element for the best beam transmission through the slit system.

公开(公告)号：WO2020131254A1

公开(公告)日：2020-06-25

申请号：PCT/US2019/061169

申请日：2019-11-13

Applicant: AXCELIS TECHNOLOGIES, INC.

Inventor： PLATOW, Wilhelm ,  EISNER, Edward ,  VANDERBERG, Bo ,  BASSOM, Neil ,  CRISTOFORO, Michael ,  ABESHAUS, Joshua

IPC: H01J27/02 ,  H01J37/317 ,  H01J37/08

Abstract: An electrode system for an ion source has a source electrode that defines a source aperture in an ion source chamber, and is coupled to a source power supply. A first ground electrode defines a first ground aperture that is electrically coupled to an electrical ground potential and extracts ions from the ion source. A suppression electrode is positioned downstream of the first ground electrode and defines a suppression aperture that is electrically coupled to a suppression power supply. A second ground electrode is positioned downstream of the suppression electrode and defines a second ground aperture. The first and second ground electrodes are fixedly coupled to one another and are electrically coupled to the electrical ground potential.