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公开(公告)号：CN101350316A
公开(公告)日：2009-01-21
申请号：CN200810134326.8
申请日：2003-12-04
Applicant: 三洋电机株式会社 , 关东三洋半导体股份有限公司
CPC classification number: H01L24/85 , H01L21/4832 , H01L21/4835 , H01L23/3107 , H01L24/45 , H01L24/48 , H01L24/97 , H01L2221/68377 , H01L2224/32245 , H01L2224/451 , H01L2224/48091 , H01L2224/48247 , H01L2224/48465 , H01L2224/73265 , H01L2224/85009 , H01L2224/85013 , H01L2224/97 , H01L2924/00014 , H01L2924/01005 , H01L2924/01006 , H01L2924/0101 , H01L2924/01013 , H01L2924/01018 , H01L2924/01027 , H01L2924/01028 , H01L2924/01029 , H01L2924/01033 , H01L2924/01059 , H01L2924/01078 , H01L2924/01082 , H01L2924/014 , H01L2924/09701 , H01L2924/12042 , H01L2924/14 , H01L2924/15311 , H01L2924/15787 , H01L2924/181 , H01L2924/19041 , H01L2924/19043 , H01L2924/19105 , H01L2224/85 , H01L2224/83 , H01L2224/78 , H01L2924/00 , H01L2924/00015 , H01L2224/05599 , H01L2924/00012
Abstract: 一种电路装置的制造方法，使用等离子体除去导电图案21表面上黏附的污染物，提高导电图案21和密封树脂28的粘附。通过选择地蚀刻导电箔10形成分离槽11，形成导电图案21。在导电图案21的规定位置安装半导体元件22A等电路元件，并和导电图案21电连接。通过自导电箔10上方照射等离子体除去分离槽11表面黏附的污染物。
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公开(公告)号：CN1235276C
公开(公告)日：2006-01-04
申请号：CN200310119585.0
申请日：2003-12-04
Applicant: 三洋电机株式会社 , 关东三洋半导体股份有限公司
CPC classification number: H01L24/97 , H01L21/4846 , H01L23/3128 , H01L23/49894 , H01L24/45 , H01L24/48 , H01L24/49 , H01L24/73 , H01L2224/32225 , H01L2224/451 , H01L2224/48091 , H01L2224/48227 , H01L2224/48247 , H01L2224/48465 , H01L2224/49171 , H01L2224/73265 , H01L2224/85913 , H01L2224/97 , H01L2924/01005 , H01L2924/01006 , H01L2924/0101 , H01L2924/01011 , H01L2924/01018 , H01L2924/01029 , H01L2924/01033 , H01L2924/01046 , H01L2924/01047 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/07802 , H01L2924/12042 , H01L2924/13055 , H01L2924/14 , H01L2924/15311 , H01L2924/181 , H01L2924/19041 , H01L2924/19043 , H01L2924/351 , H05K3/284 , H05K3/381 , Y10T29/49117 , Y10T29/49128 , Y10T29/4913 , Y10T29/49144 , Y10T29/49155 , Y10T29/49165 , H01L2924/00014 , H01L2224/85 , H01L2224/83 , H01L2924/00 , H01L2924/00012 , H01L2924/00015
Abstract: 一种电路装置的制造方法，通过向在导电配线层上形成的外敷层树脂照射等离子体，提高外敷层树脂和密封树脂层的粘附。设置介由层间绝缘层(22)层积的第一导电膜(23A)及第二导电膜(23B)。通过选择地除去第一导电膜形成第一导电配线层(12A)，并由外敷层树脂(18)覆盖第一导电配线层。通过在外敷层树脂(18)上照射等离子体进行其表面的粗糙化。形成密封树脂(17)，以覆盖粗糙化的外敷层树脂(18)表面及电路元件(13)。
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公开(公告)号：CN1516272A
公开(公告)日：2004-07-28
申请号：CN200310120768.4
申请日：2003-12-03
Applicant: 三洋电机株式会社 , 关东三洋半导体股份有限公司
CPC classification number: H01L21/6835 , H01L23/49822 , H01L23/49838 , H01L23/49894 , H01L24/45 , H01L24/48 , H01L24/49 , H01L24/97 , H01L2221/68345 , H01L2224/16225 , H01L2224/32225 , H01L2224/45144 , H01L2224/48091 , H01L2224/49171 , H01L2224/73204 , H01L2224/73265 , H01L2224/97 , H01L2924/00014 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01015 , H01L2924/01019 , H01L2924/0102 , H01L2924/01023 , H01L2924/01024 , H01L2924/01027 , H01L2924/01029 , H01L2924/01033 , H01L2924/01046 , H01L2924/01047 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/01087 , H01L2924/01088 , H01L2924/12042 , H01L2924/13055 , H01L2924/14 , H01L2924/15311 , H01L2924/181 , H01L2924/19041 , H01L2924/19043 , H01L2924/19105 , H01L2924/30105 , H05K1/024 , H05K3/205 , H05K3/4676 , H05K3/4682 , H05K2201/068 , Y10S428/901 , Y10T428/24917 , H01L2224/85 , H01L2224/81 , H01L2224/83 , H01L2924/00 , H01L2924/00012 , H01L2224/0401
Abstract: 本发明提供一种具有改进的产品可靠性和高频性能的低分布和重量轻的半导体装置。刚好在电路器件410a和410b的下面配置了多层互连线结构。组成一部分多层互连线结构的夹层绝缘薄膜405由具有范围在1.0到3.7之内的相对电介质常数，和范围在从0.0001到0.02之内的介质损耗正切的一种材料形成。
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公开(公告)号：CN1812063A
公开(公告)日：2006-08-02
申请号：CN200510119326.7
申请日：2003-12-04
Applicant: 三洋电机株式会社 , 关东三洋半导体股份有限公司
CPC classification number: H01L24/97 , H01L21/4846 , H01L23/3128 , H01L23/49894 , H01L24/45 , H01L24/48 , H01L24/49 , H01L24/73 , H01L2224/32225 , H01L2224/451 , H01L2224/48091 , H01L2224/48227 , H01L2224/48247 , H01L2224/48465 , H01L2224/49171 , H01L2224/73265 , H01L2224/85913 , H01L2224/97 , H01L2924/01005 , H01L2924/01006 , H01L2924/0101 , H01L2924/01011 , H01L2924/01018 , H01L2924/01029 , H01L2924/01033 , H01L2924/01046 , H01L2924/01047 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/07802 , H01L2924/12042 , H01L2924/13055 , H01L2924/14 , H01L2924/15311 , H01L2924/181 , H01L2924/19041 , H01L2924/19043 , H01L2924/351 , H05K3/284 , H05K3/381 , Y10T29/49117 , Y10T29/49128 , Y10T29/4913 , Y10T29/49144 , Y10T29/49155 , Y10T29/49165 , H01L2924/00014 , H01L2224/85 , H01L2224/83 , H01L2924/00 , H01L2924/00012 , H01L2924/00015
Abstract: 一种电路装置的制造方法，通过向在导电配线层上形成的外敷层树脂照射等离子体，提高外敷层树脂和密封树脂层的粘附。设置介由层间绝缘层(22)层积的第一导电膜(23A)及第二导电膜(23B)。通过选择地除去第一导电膜形成第一导电配线层(12A)，并由外敷层树脂(18)覆盖第一导电配线层。通过在外敷层树脂(18)上照射等离子体进行其表面的粗糙化。形成密封树脂(17)，以覆盖粗糙化的外敷层树脂(18)表面及电路元件(13)。
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公开(公告)号：CN101350316B
公开(公告)日：2012-07-18
申请号：CN200810134326.8
申请日：2003-12-04
Applicant: 三洋电机株式会社 , 关东三洋半导体股份有限公司
CPC classification number: H01L24/85 , H01L21/4832 , H01L21/4835 , H01L23/3107 , H01L24/45 , H01L24/48 , H01L24/97 , H01L2221/68377 , H01L2224/32245 , H01L2224/451 , H01L2224/48091 , H01L2224/48247 , H01L2224/48465 , H01L2224/73265 , H01L2224/85009 , H01L2224/85013 , H01L2224/97 , H01L2924/00014 , H01L2924/01005 , H01L2924/01006 , H01L2924/0101 , H01L2924/01013 , H01L2924/01018 , H01L2924/01027 , H01L2924/01028 , H01L2924/01029 , H01L2924/01033 , H01L2924/01059 , H01L2924/01078 , H01L2924/01082 , H01L2924/014 , H01L2924/09701 , H01L2924/12042 , H01L2924/14 , H01L2924/15311 , H01L2924/15787 , H01L2924/181 , H01L2924/19041 , H01L2924/19043 , H01L2924/19105 , H01L2224/85 , H01L2224/83 , H01L2224/78 , H01L2924/00 , H01L2924/00015 , H01L2224/05599 , H01L2924/00012
Abstract: 一种电路装置的制造方法，使用等离子体除去导电图案21表面上黏附的污染物，提高导电图案21和密封树脂28的粘附。通过选择地蚀刻导电箔10形成分离槽11，形成导电图案21。在导电图案21的规定位置安装半导体元件22A等电路元件，并和导电图案21电连接。通过自导电箔10上方照射等离子体除去分离槽11表面黏附的污染物。
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Patent Agency Ranking
公开(公告)号：CN100418202C
公开(公告)日：2008-09-10
申请号：CN200310119584.6
申请日：2003-12-04
Applicant: 三洋电机株式会社 , 关东三洋半导体股份有限公司
CPC classification number: H01L24/85 , H01L21/4832 , H01L21/4835 , H01L23/3107 , H01L24/45 , H01L24/48 , H01L24/97 , H01L2221/68377 , H01L2224/32245 , H01L2224/451 , H01L2224/48091 , H01L2224/48247 , H01L2224/48465 , H01L2224/73265 , H01L2224/85009 , H01L2224/85013 , H01L2224/97 , H01L2924/00014 , H01L2924/01005 , H01L2924/01006 , H01L2924/0101 , H01L2924/01013 , H01L2924/01018 , H01L2924/01027 , H01L2924/01028 , H01L2924/01029 , H01L2924/01033 , H01L2924/01059 , H01L2924/01078 , H01L2924/01082 , H01L2924/014 , H01L2924/09701 , H01L2924/12042 , H01L2924/14 , H01L2924/15311 , H01L2924/15787 , H01L2924/181 , H01L2924/19041 , H01L2924/19043 , H01L2924/19105 , H01L2224/85 , H01L2224/83 , H01L2224/78 , H01L2924/00 , H01L2924/00015 , H01L2224/05599 , H01L2924/00012
Abstract: 一种电路装置的制造方法，使用等离子体除去导电图案21表面上黏附的污染物，提高导电图案21和密封树脂28的粘附。通过选择地蚀刻导电箔10形成分离槽11，形成导电图案21。在导电图案21的规定位置安装半导体元件22A等电路元件，并和导电图案21电连接。通过自导电箔10上方照射等离子体除去分离槽11表面黏附的污染物。
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公开(公告)号：CN1505124A
公开(公告)日：2004-06-16
申请号：CN200310119585.0
申请日：2003-12-04
Applicant: 三洋电机株式会社 , 关东三洋半导体股份有限公司
CPC classification number: H01L24/97 , H01L21/4846 , H01L23/3128 , H01L23/49894 , H01L24/45 , H01L24/48 , H01L24/49 , H01L24/73 , H01L2224/32225 , H01L2224/451 , H01L2224/48091 , H01L2224/48227 , H01L2224/48247 , H01L2224/48465 , H01L2224/49171 , H01L2224/73265 , H01L2224/85913 , H01L2224/97 , H01L2924/01005 , H01L2924/01006 , H01L2924/0101 , H01L2924/01011 , H01L2924/01018 , H01L2924/01029 , H01L2924/01033 , H01L2924/01046 , H01L2924/01047 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/07802 , H01L2924/12042 , H01L2924/13055 , H01L2924/14 , H01L2924/15311 , H01L2924/181 , H01L2924/19041 , H01L2924/19043 , H01L2924/351 , H05K3/284 , H05K3/381 , Y10T29/49117 , Y10T29/49128 , Y10T29/4913 , Y10T29/49144 , Y10T29/49155 , Y10T29/49165 , H01L2924/00014 , H01L2224/85 , H01L2224/83 , H01L2924/00 , H01L2924/00012 , H01L2924/00015
Abstract: 一种电路装置的制造方法，通过向在导电配线层上形成的外敷层树脂照射等离子体，提高外敷层树脂和密封树脂层的粘附。设置介由层间绝缘层22层积的第一导电膜23A及第二导电膜23B。通过选择地除去第一导电膜形成第一导电配线层12A，并由外敷层树脂18覆盖第一导电配线层。通过在外敷层树脂18上照射等离子体进行其表面的粗糙化。形成密封树脂17，以覆盖粗糙化的外敷层树脂18表面及电路元件13。
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公开(公告)号：CN1505123A
公开(公告)日：2004-06-16
申请号：CN200310119584.6
申请日：2003-12-04
Applicant: 三洋电机株式会社 , 关东三洋半导体股份有限公司
CPC classification number: H01L24/85 , H01L21/4832 , H01L21/4835 , H01L23/3107 , H01L24/45 , H01L24/48 , H01L24/97 , H01L2221/68377 , H01L2224/32245 , H01L2224/451 , H01L2224/48091 , H01L2224/48247 , H01L2224/48465 , H01L2224/73265 , H01L2224/85009 , H01L2224/85013 , H01L2224/97 , H01L2924/00014 , H01L2924/01005 , H01L2924/01006 , H01L2924/0101 , H01L2924/01013 , H01L2924/01018 , H01L2924/01027 , H01L2924/01028 , H01L2924/01029 , H01L2924/01033 , H01L2924/01059 , H01L2924/01078 , H01L2924/01082 , H01L2924/014 , H01L2924/09701 , H01L2924/12042 , H01L2924/14 , H01L2924/15311 , H01L2924/15787 , H01L2924/181 , H01L2924/19041 , H01L2924/19043 , H01L2924/19105 , H01L2224/85 , H01L2224/83 , H01L2224/78 , H01L2924/00 , H01L2924/00015 , H01L2224/05599 , H01L2924/00012
Abstract: 一种电路装置的制造方法，使用等离子体除去导电图案21表面上黏附的污染物，提高导电图案21和密封树脂28的粘附。通过选择地蚀刻导电箔10形成分离槽11，形成导电图案21。在导电图案21的规定位置安装半导体元件22A等电路元件，并和导电图案21电连接。通过自导电箔10上方照射等离子体除去分离槽11表面黏附的污染物。
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公开(公告)号：CN100403500C
公开(公告)日：2008-07-16
申请号：CN200510119326.7
申请日：2003-12-04
Applicant: 三洋电机株式会社 , 关东三洋半导体股份有限公司
CPC classification number: H01L24/97 , H01L21/4846 , H01L23/3128 , H01L23/49894 , H01L24/45 , H01L24/48 , H01L24/49 , H01L24/73 , H01L2224/32225 , H01L2224/451 , H01L2224/48091 , H01L2224/48227 , H01L2224/48247 , H01L2224/48465 , H01L2224/49171 , H01L2224/73265 , H01L2224/85913 , H01L2224/97 , H01L2924/01005 , H01L2924/01006 , H01L2924/0101 , H01L2924/01011 , H01L2924/01018 , H01L2924/01029 , H01L2924/01033 , H01L2924/01046 , H01L2924/01047 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/07802 , H01L2924/12042 , H01L2924/13055 , H01L2924/14 , H01L2924/15311 , H01L2924/181 , H01L2924/19041 , H01L2924/19043 , H01L2924/351 , H05K3/284 , H05K3/381 , Y10T29/49117 , Y10T29/49128 , Y10T29/4913 , Y10T29/49144 , Y10T29/49155 , Y10T29/49165 , H01L2924/00014 , H01L2224/85 , H01L2224/83 , H01L2924/00 , H01L2924/00012 , H01L2924/00015
Abstract: 一种电路装置的制造方法，通过向在导电配线层上形成的外敷层树脂照射等离子体，提高外敷层树脂和密封树脂层的粘附。设置介由层间绝缘层(22)层积的第一导电膜(23A)及第二导电膜(23B)。通过选择地除去第一导电膜形成第一导电配线层(12A)，并由外敷层树脂(18)覆盖第一导电配线层。通过在外敷层树脂(18)上照射等离子体进行其表面的粗糙化。形成密封树脂(17)，以覆盖粗糙化的外敷层树脂(18)表面及电路元件(13)。
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公开(公告)号：CN1306604C
公开(公告)日：2007-03-21
申请号：CN200310120768.4
申请日：2003-12-03
Applicant: 三洋电机株式会社 , 关东三洋半导体股份有限公司
CPC classification number: H01L21/6835 , H01L23/49822 , H01L23/49838 , H01L23/49894 , H01L24/45 , H01L24/48 , H01L24/49 , H01L24/97 , H01L2221/68345 , H01L2224/16225 , H01L2224/32225 , H01L2224/45144 , H01L2224/48091 , H01L2224/49171 , H01L2224/73204 , H01L2224/73265 , H01L2224/97 , H01L2924/00014 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01015 , H01L2924/01019 , H01L2924/0102 , H01L2924/01023 , H01L2924/01024 , H01L2924/01027 , H01L2924/01029 , H01L2924/01033 , H01L2924/01046 , H01L2924/01047 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/01087 , H01L2924/01088 , H01L2924/12042 , H01L2924/13055 , H01L2924/14 , H01L2924/15311 , H01L2924/181 , H01L2924/19041 , H01L2924/19043 , H01L2924/19105 , H01L2924/30105 , H05K1/024 , H05K3/205 , H05K3/4676 , H05K3/4682 , H05K2201/068 , Y10S428/901 , Y10T428/24917 , H01L2224/85 , H01L2224/81 , H01L2224/83 , H01L2924/00 , H01L2924/00012 , H01L2224/0401
Abstract: 本发明提供一种具有改进的产品可靠性和高频性能的低分布和重量轻的半导体装置。刚好在电路器件410a和410b的下面配置了多层互连线结构。组成一部分多层互连线结构的夹层绝缘薄膜405由具有范围在1.0到3.7之内的相对电介质常数，和范围在从0.0001到0.02之内的介质损耗正切的一种材料形成。
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