公开(公告)号：US20230141009A1

公开(公告)日：2023-05-11

申请号：US17913184

申请日：2021-03-03

Applicant: AMADA CO., LTD. ,  AMADA WELD TECH CO., LTD.

Inventor： Atsushi YANASE ,  Yusuke NISHIZAKI

IPC: B23K26/064 ,  G01J1/42 ,  G01J1/02

CPC classification number: B23K26/064 ,  G01J1/42 ,  G01J1/02

Abstract: A right angle reflection prism includes first and second surfaces that form a right angle, and a third surface connected to the first and second surfaces. The right angle reflection prism causes a laser beam, which is made incident on the first surface and with which a material to be processed is irradiated, to be totally reflected by the third surface so as to be emitted from the second surface. A sensor detects a power of a laser beam that has passed through the third surface.

公开(公告)号：US20190078933A1

公开(公告)日：2019-03-14

申请号：US16184715

申请日：2018-11-08

Applicant: Carrier Corporation

Inventor： Sameh Dardona ,  Marcin Piech ,  Wayde R. Schmidt ,  Antonio M. Vincitore ,  Joseph V. Mantese ,  Rhonda R. Willigan ,  Peter R. Harris ,  Jose L. Santana

IPC: G01J1/42 ,  G01J1/02

CPC classification number: G01J1/429 ,  G01J1/02

Abstract: In accordance with at least one aspect of this disclosure, an ultraviolet radiation (UV) sensor includes a UV sensitive material and a first electrode and a second electrode connected in series through the UV sensitive material such that UV radiation can reach the UV sensitive material. The UV sensitive material can include at least one of zinc tin oxide, magnesium oxide, magnesium zinc oxide, or zinc oxide. The electrodes can be interdigitated comb electrodes.

公开(公告)号：US20180364094A1

公开(公告)日：2018-12-20

申请号：US16062609

申请日：2016-12-14

Applicant: TOKYO INSTITUTE OF TECHNOLOGY

Inventor： Yukio KAWANO

IPC: G01J1/02 ,  G01N21/3581 ,  G01Q60/22

CPC classification number: G01J1/02 ,  G01N21/3581 ,  G01Q60/22 ,  G02F2203/13 ,  H01L31/0224 ,  H01L31/028 ,  H01L31/09

Abstract: A terahertz image measurement device includes a terahertz detection sensor, a magnetic field generating unit, and a measurement control unit. The sensor detects near-field light of terahertz light emitted from a sample. The magnetic field generating unit has a coil disposed around the sample and the sensor, and wound to surround the optical axis of terahertz light irradiated on the sensor, and applies to the sensor a magnetic field generated by allowing an electric current to flow through the coil. The measurement control unit changes a value of the electric current flowing through the coil, sets a strength of the magnetic field to a magnetic field value for which a detection signal level of the terahertz light detected by the sensor increases prominently, and allows the magnetic field value to conform to a specific frequency of the terahertz light.

公开(公告)号：US20180328783A1

公开(公告)日：2018-11-15

申请号：US15775600

申请日：2016-11-04

Applicant: Sony Semiconductors Solutions Corporation

Inventor： Toshiyuki Nishihara ,  Keniichi Okumura

IPC: G01J1/44 ,  G01T1/20 ,  G01T1/15 ,  G01T1/208 ,  H04N5/3745 ,  H04N5/32

CPC classification number: G01J1/44 ,  G01J1/02 ,  G01J2001/442 ,  G01J2001/4466 ,  G01T1/15 ,  G01T1/20 ,  G01T1/2018 ,  G01T1/208 ,  H04N5/32 ,  H04N5/3745 ,  H04N5/37455

Abstract: The present technology relates to an optical pulse detection device, an optical pulse detection method, a radiation counter device, and a biological testing device which are capable of performing radiation counting in a more accurate manner. The optical pulse detection device includes a pixel array unit in which a plurality of pixels are arranged in a two-dimensional lattice shape, an AD converter that converts output signals of each of the pixels in the pixel array unit into digital values with gradation greater than 1 bit, and an output control circuit that performs error determination processing of comparing the digital value with a predetermined threshold value, and discarding a digital value, which is greater than the threshold value, among the digital values as an error. For example, the present technology is applicable to a radiation counter device, and the like.

公开(公告)号：US20180164409A1

公开(公告)日：2018-06-14

申请号：US15882074

申请日：2018-01-29

Applicant: DAPA INC.

Inventor： TING-YI CHEN

IPC: G01S7/481 ,  G01J1/42 ,  G01S17/08 ,  G01J1/02 ,  H01L25/16 ,  H01L31/167 ,  H01L31/02

CPC classification number: G01S7/4813 ,  G01J1/02 ,  G01J1/0271 ,  G01J1/42 ,  G01J1/4204 ,  G01S7/4814 ,  G01S7/4816 ,  G01S17/023 ,  G01S17/026 ,  G01S17/08 ,  H01L24/48 ,  H01L25/16 ,  H01L25/165 ,  H01L25/167 ,  H01L31/02005 ,  H01L31/02019 ,  H01L31/0203 ,  H01L31/02325 ,  H01L31/167 ,  H01L2224/48091 ,  H01L2224/48106 ,  H01L2224/48145 ,  H01L2224/48227 ,  H01L2924/12041 ,  H01L2924/12042 ,  H01L2924/12043 ,  H01L2924/1433

Abstract: A complex optical proximity sensor includes a substrate, a light emitter coupled to the substrate, an application-specific integrated circuit chip coupled to the substrate and embedded in a proximity sensor, a barrier disposed between the application-specific integrated circuit chip and the light emitter, and an ambient light detection chip manufactured in advance and then coupled to the application-specific integrated circuit chip thereon with a pre-determined height. The elements are disposed within a limited area of an aperture and, with a manufacturing method of the complex optical proximity sensor, the detection angle of the ambient light is thereby maximized and the detection angle of the proximity sensor is thereby minimized.

公开(公告)号：US20180017721A1

公开(公告)日：2018-01-18

申请号：US15711836

申请日：2017-09-21

Applicant: JSR Corporation

Inventor： Katsuya NAGAYA ,  Toshihiro OTSUKI ,  Takashi TSUBOUCHI

IPC: G02B5/22 ,  G01J1/04 ,  G01J1/02

CPC classification number: G02B5/22 ,  G01J1/02 ,  G01J1/0271 ,  G01J1/04 ,  G01J1/0403 ,  G01J1/0448 ,  G01J1/0488 ,  G01J1/4204 ,  G02B5/28 ,  H01L31/02162 ,  H01L31/0232 ,  H01L31/02322 ,  H01L31/08

Abstract: An optical filter including a base member having a layer containing near-infrared absorbing fine particles and a dielectric multilayer film, the optical filter satisfying a requirement that, in a wavelength range of 400 nm to 650 nm, an average of transmittance of any of light incident from a direction perpendicular to the optical filter, light obliquely incident at an angle of 30 degrees, and light obliquely incident at an angle of 60 degrees is 45% or higher and lower than 85%; and a requirement that, in a wavelength range of 800 nm to 1,200 nm, an average of optical density (OD value) of any of light incident from the direction perpendicular to the optical filter, light obliquely incident at an angle of 30 degrees with respect to the perpendicular direction, and light obliquely incident at an angle of 60 degrees with respect to the perpendicular direction is 1.7 or higher.

公开(公告)号：US09864111B2

公开(公告)日：2018-01-09

申请号：US14514985

申请日：2014-10-15

Applicant: KABUSHIKI KAISHA TOSHIBA

Inventor： Hiroshi Ohno ,  Kazushige Yamamoto ,  Soichiro Shibasaki

IPC: G02B17/08 ,  G02B19/00 ,  F21V7/04 ,  F21V7/06 ,  F21V29/00 ,  H01L31/052 ,  H01L31/054 ,  G02B5/10 ,  G01J1/02 ,  F21V5/04 ,  F21V7/00 ,  F21V29/503 ,  H02S20/30 ,  G02B17/00 ,  F21V7/09 ,  H02S40/22 ,  F21V7/22 ,  H01L33/58 ,  F21Y115/10

CPC classification number: G02B5/10 ,  F21V5/04 ,  F21V7/0091 ,  F21V7/06 ,  F21V7/09 ,  F21V7/22 ,  F21V29/503 ,  F21V29/70 ,  F21Y2115/10 ,  G01J1/02 ,  G02B17/004 ,  G02B17/0808 ,  G02B17/0812 ,  G02B17/0816 ,  G02B17/0856 ,  G02B17/086 ,  G02B17/0864 ,  G02B17/0868 ,  G02B17/0872 ,  G02B17/0876 ,  G02B17/0888 ,  G02B19/0028 ,  G02B19/0042 ,  G02B19/0047 ,  G02B19/0061 ,  G02B19/0071 ,  H01L31/052 ,  H01L31/0547 ,  H01L33/58 ,  H02S20/30 ,  H02S40/22 ,  Y02E10/52 ,  Y10T428/24273 ,  Y10T428/24322 ,  Y10T428/24479 ,  Y10T428/24612

Abstract: An optical element of an embodiment includes an optical element made of a material transparent to light, the optical element including: a back surface facing the front surface; and a connection surface. The front surface includes a recessed surface in a region facing the connection surface. The recessed surface has a point closest to the connection surface as a closest point, and has a first singular point other than the closest point.

公开(公告)号：US20170363466A1

公开(公告)日：2017-12-21

申请号：US15540360

申请日：2016-01-28

Applicant: DENSO CORPORATION

Inventor： Jun ISHIHARA ,  Takamitsu OOKURA

IPC: G01J1/44 ,  B60Q1/08 ,  G01J1/06 ,  B60Q1/30

CPC classification number: G01J1/44 ,  B60Q1/085 ,  B60Q1/30 ,  B60Q2300/312 ,  B60Q2300/337 ,  G01J1/02 ,  G01J1/06

Abstract: In an optical sensor, a detecting part includes detecting elements, and a light-shielding portion providing directional characteristics of light to the detecting elements such that the detecting elements indicate different intensities of light received in a specified direction. A signal processing part has an adjustment value for processing detection signals. The adjustment value is set as follows. Based on information of an inclination angle of a window glass of a vehicle to which the detecting part is attached, from the detecting elements, a detecting element having a directional characteristic of light suitable for the inclination angle is selected. The adjustment value is then set so as to coincide a signal value of a detection signal of the selected detecting element with a target value, when the detecting part is irradiated with light in a predetermined direction in a state where the detecting part is inclined at the inclination angle.

公开(公告)号：US20170229592A1

公开(公告)日：2017-08-10

申请号：US15017057

申请日：2016-02-05

Applicant: Texas Instruments Incorporated

Inventor： Debarshi Basu ,  Henry Litzmann Edwards ,  Ricky A. Jackson ,  Marco A. Gardner

IPC: H01L31/0232

CPC classification number: H01L31/02327 ,  G01J1/02 ,  G01J1/0209 ,  G01J1/0411 ,  G01J1/42 ,  H01L25/167 ,  H01L31/103

Abstract: An integrated circuit that includes a substrate, a photodiode, and a Fresnel structure. The photodiode is formed on the substrate, and it has a p-n junction. The Fresnel structure is formed above the photodiode, and it defines a focal zone that is positioned within a proximity of the p-n junction. In one aspect, the Fresnel structure may include a trench pattern that functions as a diffraction means for redirecting and concentrating incident photons to the focal zone. In another aspect, the Fresnel structure may include a wiring pattern that functions as a diffraction means for redirecting and concentrating incident photons to the focal zone. In yet another aspect, the Fresnel structure may include a transparent dielectric pattern that functions as a refractive means for redirecting and concentrating incident photons to the focal zone.

公开(公告)号：US20160349450A1

公开(公告)日：2016-12-01

申请号：US15232067

申请日：2016-08-09

Applicant: Luxtera, Inc.

Inventor： Thierry Pinguet ,  Attila Mekis ,  Steffen Gloeckner

IPC: G02B6/124 ,  G02B6/34 ,  G02B6/30 ,  G02B6/12

CPC classification number: G02B6/124 ,  G01J1/02 ,  G01J1/0425 ,  G02B6/12004 ,  G02B6/30 ,  G02B6/34 ,  G02B6/4208 ,  G02B2006/12038 ,  G02B2006/12061 ,  G02B2006/12104 ,  G02B2006/12157

Abstract: A method and system for coupling optical signals into silicon optoelectronic chips are disclosed and may include coupling one or more optical signals into a back surface of a CMOS photonic chip comprising photonic, electronic, and optoelectronic devices. The devices may be integrated in a front surface of the chip and one or more optical couplers may receive the optical signals in the front surface of the chip. The optical signals may be coupled into the back surface of the chip via one or more optical fibers and/or optical source assemblies. The optical signals may be coupled to the grating couplers via a light path etched in the chip, which may be refilled with silicon dioxide. The chip may be flip-chip bonded to a packaging substrate. Optical signals may be reflected back to the grating couplers via metal reflectors, which may be integrated in dielectric layers on the chip.

Abstract translation: 公开了一种用于将光信号耦合到硅光电芯片的方法和系统，并且可以包括将一个或多个光信号耦合到包括光子，电子和光电器件的CMOS光子芯片的背表面中。 器件可以集成在芯片的前表面中，并且一个或多个光耦合器可以接收芯片前表面中的光信号。 光信号可以经由一个或多个光纤和/或光源组件耦合到芯片的后表面中。 光信号可以通过蚀刻在芯片中的光路耦合到光栅耦合器，其可以用二氧化硅再填充。 芯片可以倒装芯片结合到封装基板。 光信号可以经由金属反射器反射回光栅耦合器，金属反射器可以集成在芯片上的电介质层中。