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    METHODS FOR FORMING SURFACE FEATURES USING SELF-ASSEMBLING MASKS
    93.
    发明申请
    METHODS FOR FORMING SURFACE FEATURES USING SELF-ASSEMBLING MASKS 有权
    使用自组装掩模形成表面特征的方法

    公开(公告)号：US20090107953A1

    公开(公告)日：2009-04-30

    申请号：US12057565

    申请日：2008-03-28

    Applicant: Joy Cheng ,  Mark W. Hart ,  Hiroshi Ito ,  Ho-Cheol Kim ,  Robert Miller

    Inventor： Joy Cheng ,  Mark W. Hart ,  Hiroshi Ito ,  Ho-Cheol Kim ,  Robert Miller

    IPC: C23F1/00

    CPC classification number: H01L21/0337 ,  B81C1/00031 ,  B81C2201/0149 ,  B81C2201/0198 ,  H01L21/0271 ,  H01L21/0332

    Abstract: A method for producing surface features and an etch masking method. A combination is provided of a block copolymer and additional material. The block copolymer includes a first block of a first polymer covalently bonded to a second block of a second polymer. The additional material is miscible with the first polymer. A film is formed of the combination directly onto a surface of a first layer. Nanostructures of the additional material self-assemble within the first polymer block. The film of the combination and the first layer are etched. The nanostructures have an etch rate lower than an etch rate of the block copolymer and lower than an etch rate of the first layer. The film is removed and features remain on the surface of the first layer. Also included is an etch masking method where the nanostructures mask portions of the first layer from said etchant.

    Abstract translation: 一种用于产生表面特征的方法和蚀刻掩模方法。 提供了一种嵌段共聚物和另外的材料的组合。 嵌段共聚物包括共价键合到第二聚合物的第二嵌段的第一聚合物的第一嵌段。 附加材料与第一聚合物混溶。 膜由直接形成在第一层的表面上。 附加材料的纳米结构在第一聚合物嵌段内自组装。 蚀刻组合和第一层的膜。 纳米结构的蚀刻速率低于嵌段共聚物的蚀刻速率，并且低于第一层的蚀刻速率。 去除膜并且特征保留在第一层的表面上。 还包括蚀刻掩模法，其中纳米结构掩盖了来自所述蚀刻剂的第一层的部分。

    Directed assembly of triblock copolymers
    94.
    发明申请
    Directed assembly of triblock copolymers 有权
    三嵌段共聚物的定向组装

    公开(公告)号：US20090087664A1

    公开(公告)日：2009-04-02

    申请号：US11580694

    申请日：2006-10-12

    Applicant: Paul Franklin Nealey ,  Frank S. Bates ,  Juan J. de Pablo

    Inventor： Paul Franklin Nealey ,  Frank S. Bates ,  Juan J. de Pablo

    IPC: C08G63/48 ,  B32B9/04

    CPC classification number: B81C1/00031 ,  B81C2201/0149 ,  B82Y30/00 ,  G03F7/40 ,  Y10T428/31504

    Abstract: Methods of directed self-assembly of multi-block (i.e., triblock and higher-order) copolymers on patterned substrates and related compositions are provided. According to various embodiments, the methods involve depositing copolymer materials on substrates configured to drive the assembly of micro-phase separated films that exhibit the same morphology as that copolymer materials in the bulk. In certain embodiments, binary patterns are used to drive the triblock copolymer films. The binary two-dimensional surface patterns are transformed into three-component and three-dimensional structures throughout the thickness of the overlying copolymer films.

    Abstract translation: 提供了在图案化基材和相关组合物上多嵌段（即三嵌段和高级）共聚物的定向自组装方法。 根据各种实施方案，所述方法包括将共聚物材料沉积在被配置为驱动微分离膜的组合的基材上，所述膜与本体中共聚物材料呈现相同的形态。 在某些实施方案中，使用二元图案来驱动三嵌段共聚物膜。 二元二维表面图案在上覆共聚物膜的整个厚度上转变为三组分和三维结构。

    ORIENTING, POSITIONING, AND FORMING NANOSCALE STRUCTURES
    96.
    发明申请
    ORIENTING, POSITIONING, AND FORMING NANOSCALE STRUCTURES 有权
    定向，定位和形成纳米结构

    公开(公告)号：US20080233323A1

    公开(公告)日：2008-09-25

    申请号：US11690295

    申请日：2007-03-23

    Applicant: Joy Cheng ,  Ho-Cheol Kim ,  Robert D. Miller

    Inventor： Joy Cheng ,  Ho-Cheol Kim ,  Robert D. Miller

    IPC: B29D22/00 ,  B05D3/06

    CPC classification number: B29D22/00 ,  B33Y10/00 ,  B33Y80/00 ,  B81C1/00031 ,  B81C2201/0149 ,  B82Y30/00 ,  C08L53/00 ,  G03F7/0002 ,  Y10S977/70 ,  Y10S977/701 ,  Y10S977/712 ,  Y10S977/788 ,  Y10S977/932 ,  Y10T428/1393 ,  Y10T428/24132 ,  Y10T428/249921 ,  C08L2666/02 ,  C08L2666/24

    Abstract: A method. A first copolymer is provided. A substrate is provided having an energetically neutral surface layer with at least one trough integrally disposed thereon with sidewalls. A first film of the first copolymer is coated inside the trough. Line-forming microdomains are assembled of the first copolymer forming first self-assembled structures within the first film normal to the sidewalls and parallel to the surface layer. The first and second polymer blocks are removed from the first film and oriented structures remain in the trough normal to the sidewalls and parallel to the surface layer. A second film of a second copolymer is coated inside the trough. Line-forming microdomains are assembled of the second copolymer, and form second self-assembled structures within the second film oriented normal to the oriented structures and parallel to the sidewalls. The third and fourth polymer blocks are removed, and at least one second oriented structure remains.

    Abstract translation: 一个方法。 提供第一共聚物。 提供具有能量中性的表面层的基底，其中至少一个槽与其一体地设置有侧壁。 第一共聚物的第一膜涂覆在槽内。 线形成微区由第一共聚物组装，该第一共聚物在垂直于侧壁的第一膜内平行于表面层形成第一自组装结构。 第一和第二聚合物嵌段从第一膜去除，并且取向结构保持在垂直于侧壁并平行于表面层的槽中。 第二共聚物的第二膜涂覆在槽内。 线形成微区由第二共聚物组装，并且在第二膜中形成第二自组装结构，该结构定向成垂直于取向结构并且平行于侧壁。 去除第三和第四聚合物嵌段，并保留至少一个第二取向结构。

    FABRICATION OF SELF ASSEMBLING NANO-STRUCTURES
    99.
    发明申请
    FABRICATION OF SELF ASSEMBLING NANO-STRUCTURES 审中-公开
    自组装纳米结构的制造

    公开(公告)号：US20080075928A1

    公开(公告)日：2008-03-27

    申请号：US11857967

    申请日：2007-09-19

    Applicant: Gemunu Gunaratne ,  Girish Nathan ,  Donald Kouri ,  Pradeep Sharma ,  Fazle Hussain ,  Feng Shi

    Inventor： Gemunu Gunaratne ,  Girish Nathan ,  Donald Kouri ,  Pradeep Sharma ,  Fazle Hussain ,  Feng Shi

    IPC: B32B1/00 ,  B05D5/00

    CPC classification number: B81C1/00031 ,  B81C2201/0149 ,  B82Y30/00 ,  Y10T428/24628

    Abstract: A new approach to fabricating regularly patterned nano-scale structures, by self assembly of the structures is disclosed, where a pattern of nano-lines are deposited on a substrate and nano-structures are grown by self assembly in regions between the lines to form regular or patterned nano-scale structures, which are ideally suited for the construction nano-scale materials, nano-scale electronic devices and other nano-scale objects, apparatuses or devices. The invention also relates to methods of making and using same.

    Abstract translation: 公开了通过结构的自组装制造规则图案的纳米尺度结构的新方法，其中纳米线的图案沉积在衬底上并且纳米结构通过自组装在线之间的区域中生长以形成规则 或图案化纳米尺度结构，其理想地适用于构造纳米级材料，纳米级电子器件和其它纳米尺度物体，装置或器件。 本发明还涉及制造和使用它们的方法。

    Methods for forming improved self-assembled patterns of block copolymers
    100.
    发明授权
    Methods for forming improved self-assembled patterns of block copolymers 有权
    形成改进的嵌段共聚物自组装图案的方法

    公开(公告)号：US07347953B2

    公开(公告)日：2008-03-25

    申请号：US11345812

    申请日：2006-02-02

    Applicant: Charles T. Black ,  Ricardo Rulz ,  Robert L. Sandstrom

    Inventor： Charles T. Black ,  Ricardo Rulz ,  Robert L. Sandstrom

    IPC: B44C1/22

    CPC classification number: B81C1/00031 ,  B81C2201/0149 ,  B82Y30/00 ,  Y10S430/146 ,  Y10T428/24479 ,  Y10T428/24488 ,  Y10T428/2457 ,  Y10T428/2462

    Abstract: A method for forming self-assembled patterns on a substrate surface is provided. First, a block copolymer layer, which comprises a block copolymer having two or more immiscible polymeric block components, is applied onto a substrate that comprises a substrate surface with a trench therein. The trench specifically includes at least one narrow region flanked by two wide regions, and wherein the trench has a width variation of more than 50%. Annealing is subsequently carried out to effectuate phase separation between the two or more immiscible polymeric block components in the block copolymer layer, thereby forming periodic patterns that are defined by repeating structural units. Specifically, the periodic patterns at the narrow region of the trench are aligned in a predetermined direction and are essentially free of defects. Block copolymer films formed by the above-described method as well as semiconductor structures comprising such block copolymer films are also described.

    Abstract translation: 提供了一种在衬底表面上形成自组装图案的方法。 首先，将包含具有两个或更多个不混溶的聚合物嵌段组分的嵌段共聚物的嵌段共聚物层施加到包含其中具有沟槽的衬底表面的衬底上。 沟槽具体包括至少一个两个宽的区域的窄区域，并且其中沟槽具有大于50％的宽度变化。 随后进行退火以实现嵌段共聚物层中的两种或更多种不混溶的聚合物嵌段组分之间的相分离，从而形成由重复结构单元定义的周期性图案。 具体地说，在沟槽的窄区域的周期性图案在预定方向上排列，并且基本上没有缺陷。 还描述了通过上述方法形成的嵌段共聚物膜以及包含这种嵌段共聚物膜的半导体结构。

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