Image sensor having an extended dynamic range upper limit
    97.
    发明授权
    Image sensor having an extended dynamic range upper limit 有权
    具有扩展动态范围上限的图像传感器

    公开(公告)号:US09591247B2

    公开(公告)日:2017-03-07

    申请号:US14579940

    申请日:2014-12-22

    Applicant: Google Inc.

    Inventor: Chung Chun Wan

    Abstract: An apparatus is described that includes an image sensor having timing and control circuitry and threshold circuitry. The timing and control circuitry is to generate signals to cause multiple transfers of charge from a photo-diode to a storage capacitor within a pixel cell during an image capture sequence. The threshold circuitry is to track the storage capacitor's voltage over the course of the multiple transfers and recognize when the storage capacitor's voltage reaches a threshold.

    Abstract translation: 描述了一种包括具有定时和控制电路和阈值电路的图像传感器的装置。 定时和控制电路是在图像捕获序列期间产生信号以使得从光电二极管到像素单元内的存储电容器的电荷的多次传输。 阈值电路是在多次传输过程中跟踪存储电容器的电压,并识别存储电容器的电压何时达到阈值。

    Silicon photomultiplier with improved detection accuracy
    98.
    发明授权
    Silicon photomultiplier with improved detection accuracy 有权
    硅光电倍增管,检测精度提高

    公开(公告)号:US09568360B2

    公开(公告)日:2017-02-14

    申请号:US14388162

    申请日:2012-03-29

    Inventor: Tetsuo Furumiya

    Abstract: One embodiment of the disclosure includes an A-D conversion circuit connected to a photodiode for providing a silicon photomultiplier that with enhanced detection accuracy and a time resolution. A current generated upon photon detection by the photodiode partially flows into another photodiode adjacent to the photodiode arranged in parallel via a resistor. At this time, the current is charged into a parasitic capacitance adjacent to the photodiode, and thereafter is discharged. However, the discharged current cannot flow toward an output terminal by the A-D conversion circuit, and also cannot switch the A-D conversion circuit. Consequently, the construction of the disclosure can detect light with no influence of the current discharged from the parasitic capacitance. As a result, the disclosure achieves a silicon photomultiplier with high detection accuracy and a satisfactory time resolution.

    Abstract translation: 本公开的一个实施例包括连接到光电二极管的A-D转换电路,用于提供具有增强的检测精度和时间分辨率的硅光电倍增管。 通过光电二极管的光子检测产生的电流部分地通过电阻器流入与光电二极管相邻的另一个光电二极管。 此时,将电流充电到与光电二极管相邻的寄生电容,然后放电。 然而,放电电流不能通过A-D转换电路流向输出端子,也不能切换A-D转换电路。 因此,本公开的结构可以不受从寄生电容放电的电流的影响来检测光。 结果,本发明实现了具有高检测精度和令人满意的时间分辨率的硅光电倍增管。

    Device and method for micro-electro-mechanical-system photonic switch
    99.
    发明授权
    Device and method for micro-electro-mechanical-system photonic switch 有权
    微电子机械系统光子开关的装置和方法

    公开(公告)号:US09519136B2

    公开(公告)日:2016-12-13

    申请号:US14086794

    申请日:2013-11-21

    Abstract: In one embodiment, a micro-electro-mechanical-system (MEMS) photonic switch includes a first plurality of collimators including a first collimator configured to receive a first traffic optical beam having a traffic wavelength and a first control optical beam having a control wavelength, where a first focal length of the first collimators at the traffic wavelength is different than a second focal length of the first collimators at the control wavelength. The MEMS photonic switch also includes a first mirror array optically coupled to the first plurality of collimators, where the first mirror array including a first plurality of first MEMS mirrors integrated on a first substrate and a first plurality of first photodiodes integrated on the first substrate, where the photodiodes are disposed in interstitial spaces between the MEMS mirrors.

    Abstract translation: 在一个实施例中,微电子机械系统(MEMS)光子开关包括第一多个准直器,其包括被配置为接收具有业务波长的第一业务光束的第一准直仪和具有控制波长的第一控制光束, 其中在交通波长处的第一准直仪的第一焦距不同于处于控制波长的第一准直仪的第二焦距。 MEMS光子开关还包括光耦合到第一多个准直器的第一反射镜阵列,其中第一反射镜阵列包括集成在第一基板上的第一多个第一MEMS反射镜和集成在第一基板上的第一多个第一光电二极管, 其中光电二极管设置在MEMS镜之间的间隙空间中。

    OUTPUT-CURRENT DETECTION CHIP FOR DIODE SENSORS, AND DIODE SENSOR DEVICE
    100.
    发明申请
    OUTPUT-CURRENT DETECTION CHIP FOR DIODE SENSORS, AND DIODE SENSOR DEVICE 有权
    二极管传感器和二极管传感器器件的输出电流检测芯片

    公开(公告)号:US20160334272A1

    公开(公告)日:2016-11-17

    申请号:US15110177

    申请日:2015-01-07

    Abstract: The present invention relates to an output-current detection IC chip for diode sensors and a diode sensor device, which reduce the influence by a leak current of a protection circuit. The present invention is equipped with a sensor unit in which anodes of N (N being an integer of 2 or more) diode sensors are connected to each other, a common terminal connected to a connection portion where the anodes are connected to each other, N input terminals connected to cathodes of the diode sensors, N+1 protection circuits connected to the input terminals and the common terminal, an I-V conversion circuit which converts an output current of each diode sensor into a voltage, a chopper circuit which switches the polarity of the output current and inputs the same to the I-V conversion circuit, and a dummy protection circuit connected to the input of the I-V conversion circuit.

    Abstract translation: 本发明涉及用于二极管传感器的输出电流检测IC芯片和二极管传感器装置,其减小了保护电路的漏电流的影响。 本发明装备有传感器单元,其中N(N为2以上的整数)二极管传感器的阳极彼此连接,公共端子连接到阳极彼此连接的连接部分,N 连接到二极管传感器的阴极的输入端子,连接到输入端子和公共端子的N + 1个保护电路,将每个二极管传感器的输出电流转换为电压的IV转换电路,切换二极管传感器的极性的斩波电路 输出电流并输入到IV转换电路,以及连接到IV转换电路的输入端的虚拟保护电路。

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