Abstract:
A three-dimensional (3D) sensing apparatus together with a projector subassembly is provided. The 3D sensing apparatus includes two cameras, which may be configured to capture ultraviolet and/or near-infrared light. The 3D sensing apparatus may also contain an optical filter and one or more computing processors that signal a simultaneous capture using the two cameras and processing the captured images into depth. The projector subassembly of the 3D sensing apparatus includes a laser diode, one or optical elements, and a photodiode that are useable to enable 3D capture.
Abstract:
The invention aims at downsizing a sensor node incorporating a biosensor to detect biological information and at improving the accuracy of detection made by the biosensor and ensures a quality of communication performed by the sensor node. In the sensor node, a sensor section with a pulse wave sensor formed therein and a main body section with a data processing unit and a wireless communication unit formed therein are separated. The sensor section includes an A/D converter unit that converts an analog signal corresponding to biological information detected by the pulse wave sensor to a digital signal. Digital signal transmission is performed from the A/D converter unit to the data processing unit. Moreover, in the sensor node, there is no conductive member that planarly overlaps with an antenna.
Abstract:
An apparatus is described that includes an image sensor having timing and control circuitry and threshold circuitry. The timing and control circuitry is to generate signals to cause multiple transfers of charge from a photo-diode to a storage capacitor within a pixel cell during an image capture sequence. The threshold circuitry is to track the storage capacitor's voltage over the course of the multiple transfers and recognize when the storage capacitor's voltage reaches a threshold.
Abstract:
A composition, a method fabricating the infrared ray transmitting filter, and an infrared ray sensor are provided. When the composition forms a film with a thickness of 1 μm, transmittance of the film in a wavelength in a range from 400 nm to 700 nm is less than 4%, and transmittance of the film in a wavelength in a range from 900 nm to 1300 nm is more than 90%. The composition comprises an alkali-soluble resin at least containing an acrylic group, a carboxyl group, and a fluorene ring, a photoinitiator, an unsaturated monomer, a pigment mixture, and a solvent. The pigment mixture is formed by mixing a colorant dispersion and a pigment in a weight ratio from 60:40 to 70:30.
Abstract:
In one embodiment, a micro-electro-mechanical-system (MEMS) photonic switch includes a first plurality of collimators including a first collimator configured to receive a first traffic optical beam having a traffic wavelength and a first control optical beam having a control wavelength, where a first focal length of the first collimators at the traffic wavelength is different than a second focal length of the first collimators at the control wavelength. The MEMS photonic switch also includes a first mirror array optically coupled to the first plurality of collimators, where the first mirror array including a first plurality of first MEMS mirrors integrated on a first substrate and a first plurality of first photodiodes integrated on the first substrate, where the photodiodes are disposed in interstitial spaces between the MEMS mirrors.
Abstract:
Presented here are devices and methods to correct ambient light measurements made in the presence of optical elements, such as the curved edge of the cover glass associated with the mobile device. In one embodiment, a film with optical properties is placed within the ambient light sensor to diffuse the high-intensity light beam coming from the optical element. In another embodiment, an aperture associated with the ambient light sensor is disposed to prevent the high-intensity light beam from entering the ambient light sensor. In another embodiment, a processor coupled to the ambient light sensor smooths the peak associated with the high intensity light beam produced by the optical element.
Abstract:
An apparatus is described that includes an image sensor having timing and control circuitry and threshold circuitry. The timing and control circuitry is to generate signals to cause multiple transfers of charge from a photo-diode to a storage capacitor within a pixel cell during an image capture sequence. The threshold circuitry is to track the storage capacitor's voltage over the course of the multiple transfers and recognize when the storage capacitor's voltage reaches a threshold.
Abstract:
One embodiment of the disclosure includes an A-D conversion circuit connected to a photodiode for providing a silicon photomultiplier that with enhanced detection accuracy and a time resolution. A current generated upon photon detection by the photodiode partially flows into another photodiode adjacent to the photodiode arranged in parallel via a resistor. At this time, the current is charged into a parasitic capacitance adjacent to the photodiode, and thereafter is discharged. However, the discharged current cannot flow toward an output terminal by the A-D conversion circuit, and also cannot switch the A-D conversion circuit. Consequently, the construction of the disclosure can detect light with no influence of the current discharged from the parasitic capacitance. As a result, the disclosure achieves a silicon photomultiplier with high detection accuracy and a satisfactory time resolution.
Abstract:
In one embodiment, a micro-electro-mechanical-system (MEMS) photonic switch includes a first plurality of collimators including a first collimator configured to receive a first traffic optical beam having a traffic wavelength and a first control optical beam having a control wavelength, where a first focal length of the first collimators at the traffic wavelength is different than a second focal length of the first collimators at the control wavelength. The MEMS photonic switch also includes a first mirror array optically coupled to the first plurality of collimators, where the first mirror array including a first plurality of first MEMS mirrors integrated on a first substrate and a first plurality of first photodiodes integrated on the first substrate, where the photodiodes are disposed in interstitial spaces between the MEMS mirrors.
Abstract:
The present invention relates to an output-current detection IC chip for diode sensors and a diode sensor device, which reduce the influence by a leak current of a protection circuit. The present invention is equipped with a sensor unit in which anodes of N (N being an integer of 2 or more) diode sensors are connected to each other, a common terminal connected to a connection portion where the anodes are connected to each other, N input terminals connected to cathodes of the diode sensors, N+1 protection circuits connected to the input terminals and the common terminal, an I-V conversion circuit which converts an output current of each diode sensor into a voltage, a chopper circuit which switches the polarity of the output current and inputs the same to the I-V conversion circuit, and a dummy protection circuit connected to the input of the I-V conversion circuit.