公开(公告)号：US08124934B2

公开(公告)日：2012-02-28

申请号：US12264605

申请日：2008-11-04

Applicant: Tatsuya Maeda

Inventor： Tatsuya Maeda

IPC: G01N23/00

CPC classification number: H04N5/76 ,  H01J37/265 ,  H01J37/28 ,  H01J2237/2487 ,  H01J2237/2817 ,  H04N5/772 ,  H04N5/775 ,  H04N5/781 ,  H04N5/907 ,  H04N9/8205

Abstract: It is facilitated in a scanning electron microscope to save the labor of executing the reproduction test, conduct basic analysis on a problem caused in execution of the automatic observation process, and confirm details resulting in the error. Upon detecting an error from an abnormality, the scanning electron microscope extracts a sample image lm(t2) obtained by retroceding from a sample image lm(te) stored so as to be associated with time te of error occurrence by a predetermined video quantity (for example, total recording time period t2) previously set and registered by an input-output device, from sample images stored in a recording device while being overwritten, and stores a resultant sample image in another recording device.

Abstract translation: 在扫描电子显微镜中便于执行再现测试的劳动，对执行自动观察过程所引起的问题进行基本分析，并确认导致错误的细节。 扫描电子显微镜从检测到异常的误差时，提取通过从存储的与样品图像lm（te）相反的获得的样本图像lm（t2），以使与出现错误的时间t相关联的预定视频量（对于 例如，由输入 - 输出设备预先设置和登记的总记录时间段t2）从存储在记录设备中的样本图像被重写，并将所得到的样本图像存储在另一个记录设备中。

公开(公告)号：US08097849B2

公开(公告)日：2012-01-17

申请号：US12653324

申请日：2009-12-11

Applicant: Fumio Ohtomo ,  Hisashi Isozaki

Inventor： Fumio Ohtomo ,  Hisashi Isozaki

IPC: H01J37/28

CPC classification number: H01J37/28 ,  G02B21/06 ,  G02B21/365 ,  H01J37/22 ,  H01J37/265 ,  H01J2237/2482

Abstract: The present invention provides an electron microscope device 1, comprising a scanning electron microscope 2 and an optical microscope 3, wherein the scanning electron microscope has scanning means 10 for scanning an electron beam and an electron detector 12 for detecting electrons issued from a specimen 8 scanned by the electron beam, and the scanning electron microscope acquires a scanning electron image based on a detection result from the electron detector, wherein the optical microscope projects an illumination light to the specimen, receives a reflection light from the specimen and acquires an optical image, and wherein an optical axis 7 of the scanning electron microscope crosses an optical axis 6 of the optical microscope at a point of observation of the specimen, wherein the scanning means projects the electron beam for scanning with a scanning width wider than a width of a scanning area, the optical microscope projects an illumination light and acquires an optical image in an overrunning portion where the electron beam is projected beyond the scanning area, and the scanning electron microscope acquires a scanning electron image based on electrons issued when the electron beam scans over the scanning area.

Abstract translation: 本发明提供一种电子显微镜装置1，其包括扫描电子显微镜2和光学显微镜3，其中扫描电子显微镜具有用于扫描电子束的扫描装置10和用于检测扫描的试样8发出的电子的电子检测器12 并且扫描电子显微镜基于来自电子检测器的检测结果获取扫描电子图像，其中光学显微镜向样本投射照明光，接收来自样本的反射光并获取光学图像， 并且其中扫描电子显微镜的光轴7在试样的观察点处与光学显微镜的光轴6交叉，其中扫描装置以比扫描宽度宽的扫描宽度投影扫描电子束 光学显微镜投射照明光并获取光学图像 电子束突出超过扫描区域的超越部分，扫描电子显微镜根据电子束扫描扫描区域时发出的电子获取扫描电子图像。

公开(公告)号：US20110285839A1

公开(公告)日：2011-11-24

申请号：US13143345

申请日：2009-11-27

Applicant: Go Kotaki ,  Atsushi Miyamoto ,  Ryo Nakagaki ,  Takehiro Hirai

Inventor： Go Kotaki ,  Atsushi Miyamoto ,  Ryo Nakagaki ,  Takehiro Hirai

IPC: H04N7/18

CPC classification number: H01J37/222 ,  G06T7/001 ,  G06T2207/10061 ,  G06T2207/30148 ,  H01J37/265 ,  H01J37/28 ,  H01J2237/2817 ,  H01L22/12

Abstract: An imaging region of a high-magnification reference image capable of being acquired in a low-magnification field without moving a stage from a position at which a defective region has been imaged at a low magnification is searched for and if the search is successful, an image of the imaging region itself is acquired and the high-magnification reference image is acquired. If the search is unsuccessful, the imaging scheme is switched to that in which the high-magnification reference image is acquired from a chip adjacent to the defective region.

Abstract translation: 搜索能够在低放大倍率领域中获取的高倍率参考图像的成像区域，而不将舞台从低倍率下的缺陷区域成像的位置移动，并且如果搜索成功，则 获取成像区域本身的图像并获取高倍率参考图像。 如果搜索不成功，则将成像方案切换到从与缺陷区相邻的芯片获取高倍率参考图像的方案。

公开(公告)号：US08045785B2

公开(公告)日：2011-10-25

申请号：US12852314

申请日：2010-08-06

Applicant: Tadashi Kitamura ,  Kazufumi Kubota ,  Shinichi Nakazawa ,  Neeti Vohra ,  Masahiro Yamamoto ,  Toshiaki Hasebe

Inventor： Tadashi Kitamura ,  Kazufumi Kubota ,  Shinichi Nakazawa ,  Neeti Vohra ,  Masahiro Yamamoto ,  Toshiaki Hasebe

IPC: G06K9/00 ,  G06K9/48 ,  G06K9/62

CPC classification number: G06K9/2054 ,  G06K9/00 ,  G06K9/036 ,  G06K9/48 ,  G06K2209/19 ,  G06T7/0004 ,  G06T7/001 ,  G06T2207/30148 ,  H01J37/265 ,  H01J37/28 ,  H01J2237/2817

Abstract: A fine pattern, such as a semiconductor integrated circuit (LSI), a liquid crystal panel, and a photomask (reticle) for the semiconductor or the liquid crystal panel, which are fabricated based on data for fabricating the fine pattern such as design data is inspected by a pattern inspection apparatus. The pattern inspection apparatus for inspecting a pattern to-be-inspected uses an image of the pattern to-be-inspected and data for fabricating the pattern to-be-inspected. The pattern inspection apparatus includes a reference pattern generation device configured to generate a reference pattern represented by one or more lines from the data, an image generation device configured to generate the image of the pattern to-be-inspected, a detecting device configured to detect an edge of the image of the pattern to-be-inspected, and an inspection device configured to inspect the pattern to-be-inspected by comparing edges of the image of the pattern to-be-inspected with the one or more lines of the reference pattern.

Abstract translation: 基于用于制造诸如设计数据的精细图案的数据制造的诸如用于半导体或液晶面板的半导体集成电路（LSI），液晶面板和光掩模（掩模版））的精细图案是 由图案检查装置检查。 用于检查待检查图案的图案检查装置使用要检查的图案的图像和用于制造待检查图案的数据。 图案检查装置包括参考图案生成装置，被配置为从数据生成由一行或多行表示的参考图案，被配置为生成待检查图案的图像的图像生成装置，被配置为检测 要检查的图案的边缘;以及检查装置，其被配置为通过将待检查的图案的图像的边缘与所述待检查的图案的边缘进行比较来检查待检查的图案， 参考模式。

公开(公告)号：US20110233400A1

公开(公告)日：2011-09-29

申请号：US13134290

申请日：2011-06-03

Applicant: Jun Matsumoto

Inventor： Jun Matsumoto

IPC: G01B15/00

CPC classification number: G01B15/00 ,  H01J37/265 ,  H01J37/28 ,  H01J2237/22 ,  H01J2237/24578 ,  H01J2237/2817 ,  H01L22/12 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A pattern measurement apparatus includes a beam intensity distribution creation unit to scan a charged particle beam over a reference pattern having edge portions formed at a right angle to create a line profile of the reference pattern and thus create a reference-beam intensity distribution, an edge width detection unit to determine line profiles for pattern models including edges formed at various inclination angles by use of the reference-beam intensity distribution and calculate edge widths reflecting an influence of a width of a reference beam, and a correspondence table creation unit to calculate correction values for edge positions from the calculated edge widths and the pattern models and create a correspondence table in which the edge widths and the correction values are associated with one another.

Abstract translation: 图案测量装置包括：束强度分布创建单元，用于扫描具有沿直角成形的边缘部分的参考图案的带电粒子束，以产生参考图案的线轮廓，从而产生参考光束强度分布，边缘 宽度检测单元，用于通过使用参考光束强度分布来确定包括以各种倾斜角度形成的边缘的图案模型的线轮廓，并计算反映参考光束的宽度的影响的边缘宽度;以及对应表创建单元，用于计算校正 从计算的边缘宽度和图案模型的边缘位置的值，并创建对应表，其中边缘宽度和校正值彼此相关联。

公开(公告)号：US20110174975A1

公开(公告)日：2011-07-21

申请号：US13079361

申请日：2011-04-04

Applicant: Yuko SASAKI ,  Makoto Ezumi ,  Makoto Nishihara ,  Tsutomu Kawai ,  Toshiaki Yanokura

Inventor： Yuko SASAKI ,  Makoto Ezumi ,  Makoto Nishihara ,  Tsutomu Kawai ,  Toshiaki Yanokura

IPC: H01J37/304

CPC classification number: H01J37/28 ,  H01J37/265 ,  H01J2237/15 ,  H01J2237/2826 ,  H01J2237/3045

Abstract: In a method of scanning a charged particle beam which can position the scan position to a proper location inside a deflectable range of the scan position of charged particle beam, the scan position of charged particle beam is deflected to a plurality of target objects inside a scan position deflectable region and on the basis of a shift of a target object at a scan location after deflection, the deflection amount at the scan location is corrected.

Abstract translation: 在扫描带电粒子束的方法中，其可以将扫描位置定位在带电粒子束的扫描位置的可偏转范围内的适当位置，带电粒子束的扫描位置偏转到扫描内的多个目标物体 位置可偏转区域，并且基于偏转之后的扫描位置处的目标物体的偏移，校正扫描位置处的偏转量。

公开(公告)号：US20110139985A1

公开(公告)日：2011-06-16

申请号：US13032050

申请日：2011-02-22

Applicant: Sayaka TANIMOTO ,  Hiroya OHTA ,  Hiroshi MAKINO ,  Ryuichi FUNATSU

Inventor： Sayaka TANIMOTO ,  Hiroya OHTA ,  Hiroshi MAKINO ,  Ryuichi FUNATSU

IPC: G01N23/225

CPC classification number: G01N23/225 ,  H01J37/265 ,  H01J37/28

Abstract: A charged particle beam apparatus that can achieve both high defect-detection sensitivity and high inspection speed for a sample with various properties in a multi-beam type semiconductor inspection apparatus. The allocation of the primary beam on the sample is made changeable, and furthermore, the beam allocation for performing the inspection at the optimum inspection specifications and at high speed is selected based on the property of the sample. In addition, many optical parameters and apparatus parameters are optimized. Furthermore, the properties of the selected primary beam are measured and adjusted.

Abstract translation: 一种能够实现多光束型半导体检查装置中具有各种性质的样品的高缺陷检测灵敏度和高检测速度的带电粒子束装置。 使样品上的一次光束的分配是可变的，此外，基于样品的性质选择用于以最佳检查规格和高速进行检查的光束分配。 此外，优化了许多光学参数和设备参数。 此外，测量和调整所选择的一次光束的性质。

公开(公告)号：US20110139982A1

公开(公告)日：2011-06-16

申请号：US13059601

申请日：2009-09-16

Applicant: Mihoko Kijima ,  Shunsuke Koshihara ,  Hitoshi Komuro ,  Ryoichi Matsuoka

Inventor： Mihoko Kijima ,  Shunsuke Koshihara ,  Hitoshi Komuro ,  Ryoichi Matsuoka

IPC: G01N23/225

CPC classification number: G03F7/70466 ,  B82Y10/00 ,  G01B15/00 ,  H01J37/265 ,  H01J37/28 ,  H01J2237/221 ,  H01J2237/2817 ,  H01L22/12

Abstract: An object of the present invention is to provide a method that can properly carry out the evaluation of a displacement and an overlapping area between first and second patterns formed through double patterning and a device therefor.To accomplish the above object, a method and a device are provided that execute a two-step matching between combined information having information concerning the first pattern combined with design information of the second pattern formed through a second exposure of double patterning and images displaying the first and second patterns, and on the basis of a moving amount of the design information of the second pattern, a displacement amount between the first and second patterns is determined.

Abstract translation: 本发明的目的是提供一种可以适当地进行通过双重图案形成的第一和第二图案之间的位移和重叠区域的评估的方法及其装置。 为了实现上述目的，提供了一种方法和装置，其执行具有与通过双重图案化的第二曝光形成的第二图案的设计信息相组合的第一图案的信息的组合信息和显示第一图像的图像之间的两步匹配 和第二图案，并且基于第二图案的设计信息的移动量，确定第一图案和第二图案之间的位移量。

公开(公告)号：US20110133080A1

公开(公告)日：2011-06-09

申请号：US12898455

申请日：2010-10-05

Applicant: Chie SHISHIDO ,  Mayuka OOSAKI ,  Mitsugu SATO ,  Hiroki KAWADA ,  Tatsuya MAEDA

Inventor： Chie SHISHIDO ,  Mayuka OOSAKI ,  Mitsugu SATO ,  Hiroki KAWADA ,  Tatsuya MAEDA

IPC: G01N23/225

CPC classification number: H01J37/263 ,  H01J37/265 ,  H01J37/28 ,  H01J2237/2826

Abstract: The present invention provides a charged particle beam apparatus used to measure micro-dimensions (CD value) of a semiconductor apparatus or the like which captures images for measurement. For the present invention, a sample for calibration, on which a plurality of polyhedral structural objects with known angles on surfaces produced by the crystal anisotropic etching technology are arranged in a viewing field, is used. A beam landing angle at each position within a viewing field is calculated based on geometric deformation on an image of each polyhedral structural object. Beam control parameters for equalizing the beam landing angle at each position within the viewing field are pre-registered. The registered beam control parameters are applied according to the position of the pattern to be measured within the viewing field when performing dimensional measurement. Accordingly, the present invention provides methods for reducing the variation in the CD value caused by the variation in the electron beam landing angle with respect to the sample with an equal beam landing angle and methods for reducing the instrumental error caused by the difference in the electron beam landing angle between apparatuses.

Abstract translation: 本发明提供一种用于测量捕获用于测量的图像的半导体装置等的微尺寸（CD值）的带电粒子束装置。 对于本发明，使用用于校准的样品，其上在视场中排列有通过晶体各向异性蚀刻技术产生的表面上具有已知角度的多个多面体结构物体。 基于每个多面体结构物体的图像上的几何变形来计算视野内的每个位置处的束着陆角。 用于均衡视场内每个位置的束着陆角的光束控制参数被预先注册。 当进行尺寸测量时，根据待测图案的位置在观察区域中应用登记的光束控制参数。 因此，本发明提供了减少相对于具有相同束着陆角的样品的电子束着角的变化引起的CD值的变化的方法，以及用于减少由电子差异引起的仪器误差的方法 设备之间的束着陆角度。

公开(公告)号：US20110098960A1

公开(公告)日：2011-04-28

申请号：US13001532

申请日：2009-06-18

Applicant: Masaki Mizuochi

Inventor： Masaki Mizuochi

IPC: G06F19/00

CPC classification number: H01J37/28 ,  H01J37/265 ,  H01J2237/2817 ,  H01J2237/2826

Abstract: Provided is a charged particle beam device wherein a secondary signal generated from an alignment pattern having known coordinate values in a sample coordinate system is detected, and a positional deviation quantity between the coordinate system of a sample (10) and the coordinate system of a stage (21) is calculated so as to generate coordinate correction data. At the time of observing a sample image, the secondary signal generated from the alignment pattern is detected at least once so as to perform realignment, and the coordinate correction data is updated. Thus, the charged particle beam device performs long-time inspection at a high observation magnification by accurately correcting the sample coordinate information obtained by temperature change, while suppressing device cost increase and throughput deterioration.

Abstract translation: 提供了一种带电粒子束装置，其中检测从具有样本坐标系中已知坐标值的对准图案产生的二次信号，以及样本（10）的坐标系与阶段的坐标系之间的位置偏差量 （21），以产生坐标校正数据。 在观察样本图像时，从对准图案生成的次要信号被检测至少一次，以便执行重新对准，并且更新坐标校正数据。 因此，带电粒子束装置通过精确地校正由温度变化获得的样本坐标信息，同时抑制器件成本增加和吞吐量恶化，从而在高观察倍率下进行长时间检查。