公开(公告)号：US20240249925A1

公开(公告)日：2024-07-25

申请号：US18390956

申请日：2023-12-20

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： JAEHYUN KIM ,  Kookjin Ann ,  Suji Gim ,  Taijong Sung ,  Sunwoo Yook ,  Young Heo

IPC: H01J37/32

CPC classification number: H01J37/32844 ,  H01J37/32449 ,  H01J37/32623 ,  H01J37/32899 ,  H01J2237/327

Abstract: An exhaust gas processing apparatus includes a first chamber and a second chamber in parallel between a processing chamber and an exhaust pump, at least one foreline connecting the first chamber and the second chamber to the processing chamber and the exhaust pump, a first plasma source connected to the first chamber and the second chamber, and a second plasma source connected to the first chamber and the second chamber, wherein the first plasma source generates a first treatment material, and the second plasma source generates a second treatment material, different from the first treatment material.

公开(公告)号：US20240223088A1

公开(公告)日：2024-07-04

申请号：US18390908

申请日：2023-12-20

Applicant: Infineon Technologies Austria AG

Inventor： Kuiwei XU

IPC: H02M3/335 ,  A61L9/22 ,  H01J37/32

CPC classification number: H02M3/335 ,  A61L9/22 ,  H01J37/32844

Abstract: Disclosed are a circuit, a fan system, and a transformer for power conversion. The circuit for power conversion includes: a voltage input terminal including a positive input terminal and a negative input terminal; a transformer, a first end of the primary side of the transformer being coupled to the positive input terminal and a second end thereof being coupled to the negative input terminal; a switch, a first end of which being coupled to the negative input terminal and a second end of which being coupled to the second end of the primary side; a first output terminal; and a secondary-side rectifier module coupled between the secondary side of the transformer and the first output terminal, for outputting, at the first output terminal, an output signal with superimposed direct current and alternating current.

公开(公告)号：US11931682B2

公开(公告)日：2024-03-19

申请号：US17405270

申请日：2021-08-18

Applicant: EDWARDS VACUUM LLC

Inventor： Imad Mahawili

IPC: H01J37/32 ,  B01D47/02 ,  B01D47/10 ,  B01D50/00 ,  B01D53/00 ,  B01D53/32 ,  B01D53/75 ,  B08B9/032 ,  C23C16/44 ,  H05H1/46

CPC classification number: B01D47/021 ,  B01D47/10 ,  B01D50/00 ,  B01D53/007 ,  B01D53/32 ,  B08B9/0321 ,  C23C16/4412 ,  H01J37/32844 ,  B01D53/005 ,  B01D2259/80 ,  B01D2259/818 ,  H05H1/4652 ,  H05H2245/17 ,  Y10S55/30

Abstract: A semiconductor waste abatement system for a semiconductor processing system includes a vacuum pump, an abatement apparatus having an abatement chamber in fluid communication with a source of semiconductor waste gas from the semiconductor processing chamber, and with the abatement chamber configured to ionize the waste gas and to exhaust ionized gas. The abatement system further includes a filter apparatus with a filter chamber, which forms a liquid reservoir. The inlet of the filter apparatus is in fluid communication with the outlet of the abatement chamber and the liquid reservoir, and the outlet of the filter apparatus is in communication with the inlet of the vacuum pump, wherein the filter chamber is under a vacuum, and wherein semiconductor waste gas is ionized in the abatement chamber and then filtered by the filter apparatus prior to input to the vacuum pump.

公开(公告)号：US20240079220A1

公开(公告)日：2024-03-07

申请号：US18504452

申请日：2023-11-08

Applicant: Applied Materials, Inc.

Inventor： Fang Ruan ,  Diwakar Kedlaya

IPC: H01J37/32 ,  H01L21/683

CPC classification number: H01J37/32844 ,  H01J37/32357 ,  H01J37/32963 ,  H01L21/683

Abstract: Semiconductor processing systems and methods are disclosed. An exemplary semiconductor processing system may include a semiconductor processing chamber containing a solid boron deposit, a remote plasma unit disposed upstream of the semiconductor processing chamber, and an optical absorption sensor disposed downstream of the semiconductor processing chamber. The remote plasma unit may be configured to generate plasma effluents from a fluorine-containing precursor. The optical absorption sensor may be configured to measure within an outflow from the semiconductor processing chamber a level of a boron-containing compound produced via a reaction between at least a portion of the solid boron deposit and the plasma effluents flowed from the remote plasma unit into the semiconductor processing chamber.

公开(公告)号：US11759832B2

公开(公告)日：2023-09-19

申请号：US17405346

申请日：2021-08-18

Applicant: Jong Min Park ,  Global Standard Technology Co., Ltd

Inventor： Jong Min Park

IPC: B08B9/045 ,  H01L21/67 ,  B08B9/08 ,  H01J37/32

CPC classification number: B08B9/045 ,  H01L21/67017 ,  H01L21/67046 ,  B01D2257/708 ,  B08B9/0808 ,  B08B2209/04 ,  H01J37/32844

Abstract: Proposed is a powder removing apparatus using a screw cylinder for a gas processing facility, in which the powder removing apparatus has a structure in which a scraper is coupled to the screw cylinder that allows a piston rod to be moved forward while being rotated in one direction and to be moved backward while being rotated in a reverse direction according to a supply direction of fluid, thereby allowing the powder adhered to an inner circumferential surface of a pipeline of the gas processing facility or an inner wall surface of the gas processing facility to be easily and efficiently removed. According to an embodiment of the present disclosure, the powder removing apparatus includes the screw cylinder and a scraper.

公开(公告)号：US20180226234A1

公开(公告)日：2018-08-09

申请号：US15884028

申请日：2018-01-30

Applicant: Applied Materials, Inc.

Inventor： Colin John DICKINSON

IPC: H01J37/32 ,  B01D53/68

CPC classification number: H01J37/32844 ,  B01D53/32 ,  B01D53/68 ,  B01D2251/102 ,  B01D2257/204 ,  B01D2257/2066 ,  B01D2258/0216 ,  B01D2259/818 ,  H01J37/32862 ,  H01J2237/3321 ,  H01J2237/334 ,  Y02C20/30

Abstract: Implementations of the present disclosure relate to systems and techniques for abating F-gases present in the effluent of semiconductor manufacturing processes. In one implementation, a water and oxygen delivery system for a plasma abatement system is provided. The water and oxygen delivery system comprises a housing that includes a floor and a plurality of sidewalls that define an enclosed region. The water and oxygen delivery system further comprises a cylindrical water tank positioned on the floor, wherein a longitudinal axis of the cylindrical water tank is parallel to a plane defined by the floor and a length of the water tank is 1.5 times or greater than the diameter of the cylindrical water tank. The water and oxygen delivery system further comprises a flow control system positioned within the housing above the cylindrical water tank.

公开(公告)号：US20180211823A1

公开(公告)日：2018-07-26

申请号：US15746032

申请日：2015-08-24

Applicant: Daniel SEVERIN ,  Thomas GEBELE ,  Thomas LEIPNITZ ,  Applied Materials, Inc.

Inventor： Daniel SEVERIN ,  Thomas GEBELE ,  Thomas LEIPNITZ

IPC: H01J37/32 ,  H01L21/285 ,  H01J37/34 ,  H01L27/12 ,  C23C14/34 ,  C23C14/00 ,  C23C14/08 ,  C23C14/35

CPC classification number: H01J37/32844 ,  C23C14/0042 ,  C23C14/0063 ,  C23C14/086 ,  C23C14/3464 ,  C23C14/352 ,  H01J37/32449 ,  H01J37/32834 ,  H01J37/3405 ,  H01J37/3473 ,  H01J37/3494 ,  H01J2237/0203 ,  H01J2237/182 ,  H01J2237/24585 ,  H01J2237/332 ,  H01L21/2855 ,  H01L27/1262 ,  Y02C20/30

Abstract: A apparatus for vacuum sputter deposition is described. The apparatus includes, a vacuum chamber; three or more sputter cathodes within the vacuum chamber for sputtering material on a substrate; a gas distribution system for providing a processing gas including H2 to the vacuum chamber; a vacuum system for providing a vacuum inside the vacuum chamber; and a safety arrangement for reducing the risk of an oxy-hydrogen explosion, wherein the safety arrangement comprises a dilution gas feeding unit connected to the vacuum system for dilution of the H2-content of the processing gas.

公开(公告)号：US20180166306A1

公开(公告)日：2018-06-14

申请号：US15826063

申请日：2017-11-29

Applicant: Applied Materials, Inc.

Inventor： David Muquing HOU ,  James L'HEUREUX ,  Zheng YUAN

IPC: H01L21/67 ,  C23C16/50 ,  C23C16/24 ,  C23C14/48

CPC classification number: H01L21/67253 ,  C23C14/48 ,  C23C14/564 ,  C23C16/24 ,  C23C16/4412 ,  C23C16/50 ,  H01J37/32834 ,  H01J37/32844 ,  H01L21/67173 ,  H01L21/67288 ,  Y02C20/30

Abstract: Embodiments of the present disclosure generally relate to abatement for semiconductor processing equipment. More particularly, embodiments of the present disclosure relate to techniques for foreline solids formation quantification. In one embodiment, a system includes one or more quartz crystal microbalance (QCM) sensors located between a processing chamber and a facility exhaust. The one or more QCM sensors provide real-time measurement of the amount of solids generated in the system without having to shut down a pump located between the processing chamber and the facility exhaust. In addition, information provided by the QCM sensors can be used to control the flow of reagents used to abate compounds in the effluent exiting the processing chamber in order to reduce solid formation.

公开(公告)号：US20170325471A1

公开(公告)日：2017-11-16

申请号：US15521301

申请日：2015-10-22

Applicant: Korea Basic Science Institute

Inventor： Young Sun MOK ,  Quang Hung TRINH ,  Suk Jae YOO

IPC: A23B7/015 ,  H05H1/24 ,  H01J37/32

CPC classification number: A23B7/015 ,  H01J37/32036 ,  H01J37/32348 ,  H01J37/32844 ,  H05H1/24 ,  Y02C20/30

Abstract: The present invention relates to an ethylene disposal apparatus comprising: a plasma discharge part having an inlet and an outlet and being filled with an adsorbent; and an electrode part for generating plasma inside the plasma discharge part, wherein the adsorbent has a catalyst supported thereon. The present invention relates to an ethylene disposal method using the ethylene disposal apparatus, the method comprising the steps of: (a) injecting ethylene-containing gas into a plasma discharge part filled with the adsorbent; (b) applying voltage to the electrode part and generating plasma in the plasma discharge part, thereby degrading the injected ethylene; and (c) cooling the plasma discharge part.

公开(公告)号：US09552967B2

公开(公告)日：2017-01-24

申请号：US14995187

申请日：2016-01-13

Applicant: Applied Materials, Inc.

Inventor： Michael S. Cox ,  Rongping Wang ,  Brian T. West ,  Roger M. Johnson ,  Colin John Dickinson

IPC: H01L21/465 ,  H01J37/32 ,  B01D53/32

CPC classification number: H01J37/32844 ,  B01D53/323 ,  B01D2257/55 ,  B01D2257/553 ,  B01D2257/556 ,  B01D2258/0216 ,  H01J37/32082 ,  H01J37/32357 ,  H01J37/32495 ,  H01J37/32541 ,  H01J37/32568 ,  H01J37/32596 ,  H01J37/32669 ,  H01J37/32825 ,  H01J2237/332 ,  H01J2237/334 ,  H01J2237/335 ,  H01L21/02123 ,  H01L21/02274 ,  Y02C20/30

Abstract: Embodiments disclosed herein include an abatement system for abating compounds produced in semiconductor processes. The abatement system includes a plasma source that has a first plate and a second plate parallel to the first plate. An electrode is disposed between the first and second plates and an outer wall is disposed between the first and second plates surrounding the electrode. The plasma source has a first plurality of magnets disposed on the first plate and a second plurality of magnets disposed on the second plate. The magnetic field created by the first and second plurality of magnets is substantially perpendicular to the electric field created between the electrode and the outer wall. In this configuration, a dense plasma is created.

Abstract translation: 本文公开的实施方案包括减轻半导体工艺中产生的化合物的减排系统。 减排系统包括具有平行于第一板的第一板和第二板的等离子体源。 电极设置在第一和第二板之间，并且外壁设置在围绕电极的第一和第二板之间。 等离子体源具有设置在第一板上的第一多个磁体和设置在第二板上的第二多个磁体。 由第一和第二多个磁体产生的磁场基本上垂直于在电极和外壁之间产生的电场。 在该配置中，产生致密等离子体。